N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

The FS8205A is a dual N-channel enhancement-mode power MOSFET designed primarily for lithium-ion and lithium-polymer battery protection applications. Manufactured by several semiconductor vendors including Fortune Semiconductor, this device integrates two low on-resistance MOSFETs within a compact surface-mount package, enabling efficient bidirectional current control for battery charging and discharging systems. The device is commonly paired with single-cell battery protection controller ICs such as the DW01A to provide overcharge, overdischarge, overcurrent, and short-circuit protection in portable electronic products. Its low drain-to-source resistance minimizes conduction losses and improves overall battery efficiency while maintaining compact PCB layout requirements. The FS8205A is widely used in battery management systems, portable consumer electronics, rechargeable battery packs, USB-powered devices, IoT hardware, and embedded power management circuits requiring reliable load switching and battery protection functionality. Engineering Specification Device Type Dual N-channel power MOSFET Transistor Technology Enhancement-mode MOSFET architecture Channel Configuration Dual independent N-channel MOSFETs Switching Characteristics Low on-resistance for efficient power switching Gate Characteristics Logic-level gate drive compatibility Current Handling Optimized for battery charge and discharge current control Power Efficiency Low conduction loss for improved battery runtime Protection System Compatibility Designed for lithium battery protection controller integration Thermal Characteristics Compact thermal-efficient surface-mount structure Package Type SOP-8 surface-mount package Mounting Style Surface mount technology Reliability Features Stable switching performance and robust load handling capability Applications Lithium-ion battery protection Battery management systems Portable electronics Rechargeable battery packs USB-powered devices Power path switching Embedded systems Consumer electronics IoT hardware Load switching circuits Manufacturer Commonly manufactured by Fortune Semiconductor and compatible vendors #commonpartslibrary #mosfet #dualmosfet #nchannelmosfet #batteryprotection #batterymanagement #powermanagement #powerelectronics #embeddedhardware #consumerelectronics #surfaceountcomponents #electronicsdesign #lithiumbattery #loadswitch #portableelectronics

P-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC The SQ4435EY-T1_GE3 is an automotive-grade P-Channel enhancement-mode TrenchFET® power MOSFET from Vishay Siliconix. It is designed for efficient high-side load switching and power management applications, offering low on-resistance, fast switching performance, and excellent thermal reliability. Qualified to AEC-Q101, this MOSFET is suitable for demanding automotive and industrial environments. It is housed in a compact SO-8 surface-mount package, making it ideal for space-constrained designs. Key Features P-Channel enhancement-mode TrenchFET® MOSFET 30 V drain-to-source voltage (VDS) 15 A continuous drain current (TC = 25°C) Low RDS(on): 18 mΩ max @ VGS = -10 V 31 mΩ max @ VGS = -4.5 V AEC-Q101 qualified for automotive applications Operating junction temperature: -55°C to +175°C Low conduction losses for improved power efficiency Fast switching characteristics 100% Rg and UIS tested RoHS compliant and halogen-free Compact SO-8 surface-mount package Typical Applications Automotive high-side load switches Battery management systems (BMS) DC-DC converters Power distribution switches Motor control circuits Industrial power management Reverse battery protection #Vishay #SQ4435EY #PChannelMOSFET #TrenchFET #PowerMOSFET #Automotive #AECQ101 #HighSideSwitch #PowerManagement #DCDC #BatteryManagement #SO8 #IndustrialElectronics #LowRDSon #SurfaceMount

N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion

STDRIVEG600 half-bridge gate driver for enhancement-mode GaN FETs and N-channel power MOSFETs, high-side section rated up to 600V, suitable for bus voltages up to 500V, high-current drive capability, short propagation delay, supply voltage down to 5V, UVLO protection for high-side and low-side drivers, interlock protection against cross-conduction, 3.3V CMOS/TTL compatible logic inputs for MCU and DSP control.

N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB 650 V GaN FET for high-efficiency power switching applications. Rated for 650 V drain-to-source voltage (VDS) with 70 mΩ typical RDS(on), it supports 41 A continuous drain current (TC = 25°C). The device features a normally-off (enhancement-mode) GaN HEMT, ±20 V gate-source voltage rating, and is housed in a TO-220 package (4-lead, Kelvin source) for improved gate drive performance. #GaNFET #EnhancementMode #650V #70mOhm #41A #PowerTransistor #TO220 #KelvinSource #Renesas #PowerElectronics

20V N-Channel Enhancement-Mode MOSFET #IntegratedCircuit #PowerManagement #Battery-Charger #SPV1040

IC HALF BRIDGE DRVR 5.5A/6A 16SO STDRIVEG600 single-chip half-bridge gate driver for enhancement-mode GaN FETs and N-channel power MOSFETs, high-side voltage up to 600V, suitable for bus voltages up to 500V, designed for high-speed GaN and Si FET driving, high current capability, short propagation delay, supply voltage down to 5V, UVLO protection on high-side and low-side sections, interlocking function to prevent cross-conduction, 3.3V CMOS/TTL compatible logic inputs for MCU/DSP interface.

The SI2300 is a N-channel enhancement-mode MOSFET designed for efficient switching and power management applications. Fabricated using advanced trench MOS technology, it delivers low on-state resistance, fast switching performance, and high current handling capability within a compact surface-mount package. The device is widely used in load switching, battery-powered equipment, DC-DC converters, motor control circuits, power distribution systems, and general-purpose switching applications where efficiency and space optimization are critical. Features N-channel enhancement-mode MOSFET Low on-state resistance for reduced conduction losses Fast switching characteristics Low gate charge for efficient drive operation Compact surface-mount package High current carrying capability Low power dissipation design Optimized for battery-operated systems Suitable for high-speed switching applications RoHS-compliant and lead-free construction Applications Power management circuits Load switching systems Battery protection modules Portable electronic devices DC-DC converter circuits Motor drive applications Power distribution networks Embedded control systems Consumer electronics Industrial automation equipment Electrical Characteristics Low drain-to-source on-resistance High drain current capability Low gate threshold voltage Fast turn-on and turn-off response Low gate capacitance High switching efficiency Low leakage current characteristics Enhanced thermal performance Stable operation across specified temperature ranges Reliable avalanche and transient performance Mechanical Characteristics Surface-mount package construction Compact footprint for high-density PCB layouts Suitable for automated assembly processes Compatible with standard reflow soldering methods Tape-and-reel packaging availability Robust package integrity for production environments Environmental Characteristics Industrial-grade reliability Resistance to mechanical shock and vibration within specification limits Moisture-resistant package design Suitable for operation in demanding electronic environments Compliant with RoHS and environmental regulations Long operational lifetime under recommended operating conditions #commonpartslibrary #mosfet #nchannelmosfet #powermanagement #powerswitching #semiconductor #transistor #loadswitch #dcdcconverter #batteryprotection #embeddedsystems #industrialelectronics #consumerelectronics #smtcomponent #electronicsdesign

MOSFET N-CH 20V 6.3A SOT-23 The IRLML6244TRPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies (originally International Rectifier HEXFET series). It is designed for low-voltage power switching applications such as load switching, DC-DC converters, and LED control. It comes in a compact SOT-23 (Micro3™) surface-mount package, making it suitable for space-constrained PCB designs while still handling relatively high current for its size. Key Features Drain-Source Voltage (VDS): 20 V Continuous Drain Current: up to ~6.3 A (at 25°C) Very low RDS(on): ~21 mΩ @ VGS = 4.5 V ~27 mΩ @ VGS = 2.5 V Low gate threshold voltage (~0.5–1.1 V typical range) (note: not a switching guarantee) Gate-to-source voltage rating: ±12 V Low power loss due to low on-resistance High efficiency switching for low-voltage systems Power dissipation: ~1.3 W (thermal limited in SOT-23 package) Fast switching performance (low gate charge ~8.9 nC) Operating temperature range: −55°C to +150°C RoHS compliant (lead-free, halogen-free) Typical Applications Low-side load switching (MCUs, GPIO control) LED strip / RGB LED drivers Battery-powered systems DC-DC converter switching Small motor or relay driving General-purpose power management in compact electronics Important Design Note Even though it has a low VGS(th), this MOSFET is not selected based on threshold voltage. What matters is the RDS(on) at your gate drive voltage (2.5 V / 3.3 V / 5 V) to ensure it fully turns on with minimal heating. #CommonPartsLibrary #Transistor #FET #IRLML6244 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #Infineon #HEXFET #LEDDriver #LowSideSwitch #ElectronicsComponents

N-Channel Power MOSFET – 30 V N-channel enhancement-mode MOSFET optimized for load switching, DC-DC converters, battery-powered devices, power management, motor control, and embedded switching applications. Features a 30 V drain-to-source voltage (VDS), 2 A continuous drain current, and 165 mΩ maximum RDS(on) at VGS = 4.5 V, with 1.8 V logic-level gate drive compatibility for low-voltage microcontroller interfaces. Offers 1.7 nC typical gate charge, 130 pF typical input capacitance, ultra-fast switching performance, and an integrated body diode for efficient power conversion. Rated for ±12 V gate-to-source voltage, 800 mW power dissipation, 150°C maximum junction temperature, and housed in a 3-pin MCPH3 (SC-70 / SOT-323) surface-mount package. This device is obsolete / not recommended for new designs. #onsemi #MCH3478TLH #MCH3478 #NChannelMOSFET #LogicLevelMOSFET #PowerMOSFET #LoadSwitch #DCDCConverter #PowerManagement #MotorDriver #SOT323 #EmbeddedSystems

P-Channel 30V 15A (Ta), 70A (Tc) 2.5W (Ta), 90W (Tc) Surface Mount TO-252 (DPAK) P-channel enhancement-mode MOSFET designed for power switching applications, featuring a −30 V drain-source voltage, −70 A continuous drain current (at V_GS = −20 V, T_C = 25°C), and a maximum R_DS(on) of 6.2 mΩ at V_GS = −20 V (8 mΩ max at −10 V). The device uses advanced trench technology and is specified with ±25 V gate-source voltage, 100% UIS testing, and 100% gate resistance (R_g) testing. #Commonpartslibrary #Transistor #P-Channel #MOSFET #PowerMOSFET #30V #HighCurrent #LowRDSon

N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier

P-Channel 30 V 11A (Ta), 35A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UX) P-channel enhancement mode MOSFET designed for power switching and power management applications. It features a −30 V drain-source voltage (VDS) rating, −11 A continuous drain current (TA = +25°C), a maximum RDS(ON) of 12 mΩ at VGS = −10 V (21 mΩ at −4.5 V), and is housed in a PowerDI3333-8 (Type UX) package with an ESD-protected gate. #PChannelMOSFET #EnhancementModeMOSFET #30V #11A #LowRDSOn #PowerManagement #PowerSwitching #DCDCConverter #PowerDI33338 #DiodesIncorporated