I’ll inspect the part metadata, schematic symbol, footprint/pads, and existing properties, then verify them against the official EPC2019 datasheet and update the Datasheet URL if it’s missing.
Review complete. The part already has a Datasheet URL set, so I did not overwrite it; I also found the official EPC datasheet at https://epc-co.com/epc/documents/datasheets/EPC2019_datasheet.pdf.
Key findings:
MPN/manufacturer match: EPC2019, Efficient Power Conversion / EPC.
Part type matches: enhancement-mode N-channel eGaN FET.
Pin count matches: 7 pads.
Symbol pin numbering matches datasheet:
1 = Gate
2, 4, 6 = Source
3, 5 = Drain
7 = Substrate
Footprint pad geometry and placement match the datasheet land pattern: 0.23 mm circular pads, 0.23 × 0.68 mm oval pads, 0.6 mm / 0.45 mm pitch relationships, ~2.766 × 0.950 mm die outline.
Mismatches / issues flagged:
Project description says RDS(on) 42 mΩ max, but the datasheet extraction reports 50 mΩ max at VGS = 5 V, ID = 7 A, with 36 mΩ typical. The web search snippet also reported 42 mΩ, so this should be verified visually in the official PDF revision you intend to use.
Project description says Qg ≈ 2.9 nC, while the datasheet extraction reports Qg typ 1.8 nC, max 2.5 nC.
Schematic terminal Pin Type fields are all Unspecified; they should ideally be set to Gate/Input, Drain/Power, Source/Power, and Substrate/Passive or Power depending on Flux conventions.
The part has no BOM item because this is a published part project made from terminal components, not a design using the part.