Part Audit Review

flux

Scope status: Completed audit; no mutation required.
Inspected evidence
  • Part: MCH3478-TL-H
  • Manufacturer: ON Semiconductor / onsemi — matches datasheet
  • MPN: MCH3478-TL-H — matches
  • Description: “MOSFETs NCH 1.8V DRIVE SERIES” — broadly correct but incomplete
  • Package: MCPH3; equivalent SC-70/SOT-323
  • Pin count: 3
  • Project properties: Datasheet URL, Designator Prefix Q, Manufacturer Part Number, Manufacturer Name
  • Existing Datasheet property: populated with an uploaded PDF, so per instruction it was not changed
  • Current official onsemi URL: https://www.onsemi.com/download/data-sheet/pdf/ena1353-d.pdf
Datasheet specifications
  • N-channel, single power MOSFET
  • VDSS: 30 V
  • VGSS: ±12 V
  • ID: 2 A DC; 2.5 A for ≤10 s at ≤1% duty; 8 A pulse for ≤10 µs at ≤1% duty
  • RDS(on):
    • 125 mΩ typ / 165 mΩ max at VGS=4.5 V, ID=1 A
    • 165 mΩ typ / 235 mΩ max at VGS=2.5 V, ID=0.5 A
    • 250 mΩ typ / 375 mΩ max at VGS=1.8 V, ID=0.3 A
  • Threshold/cutoff voltage: 0.4–1.3 V at VDS=10 V, ID=1 mA
  • Power dissipation: 0.8 W DC; 1.2 W for 10 s, both on specified 900 mm² × 0.8 mm ceramic substrate
  • Channel temperature: 150 °C
  • Storage: −55 to +150 °C
  • No explicit θJA value was found; thermal capability is substrate-dependent.
  • Exact mapping: pin 1 Gate, pin 2 Source, pin 3 Drain
Symbol findings
All three terminal numbers exist, but:
  • Pins 1, 2, and 3 are all named ~
  • All are typed Unspecified
  • Pin descriptions are absent
  • Pin groups, sections, and terminal ordering are absent
Thus the symbol does not identify Gate, Source, or Drain despite having the correct numeric pins. The rendered custom symbol is also a plain rectangular body rather than a recognizable N-MOSF symbol.
Footprint findings
  • Three rectangular SMD pads, logically associated with pins 1–3
  • Pad centers from footprint source:
    • 1: (−1.062, −0.65) mm
    • 2: (−1.062, +0.65) mm
    • 3: (+1.062, 0) mm
  • Each pad: 0.500 × 0.525 mm, rotated 90°
  • Fabrication body outline: 1.6 × 2.0 mm
  • Courtyard: 2.95 × 2.30 mm
  • 3D STEP model is present.
  • Datasheet package is approximately 2.1 × 2.0 × 0.85 mm, 0.65 mm pitch.
  • Datasheet land-pattern example specifies 0.4 × 0.6 mm lands. The stored 0.500 × 0.525 mm pads therefore do not match the recommended land geometry.
  • Flux pad labels display as ~; numbering is only recoverable through terminal UID association.
Mutation
  • Unattempted/not applicable: Datasheet update, because the property was already non-empty.
  • No symbol, footprint, or other properties were altered.
Safe to use as-is?
No. The numeric pin mapping appears recoverable and correct, but the unnamed/untyped symbol terminals create a substantial connection-error risk, and the footprint pad geometry differs from the official recommended land pattern. The part should be corrected and footprint-validated before production use.

flux

The audit is complete: the datasheet was already present, and the main issues are unnamed/untyped symbol pins plus footprint lands that differ from onsemi’s recommendation. I’m recording the detailed findings now.
Created a project doc

MCH3478-TL-H Part Audit

View Document
Manufacturer: onsemi / ON Semiconductor — matches official datasheet MPN: MCH3478-TL-H — matches official datasheet

flux

Audit complete. The datasheet was already populated, so it was not changed; metadata is broadly correct, but the symbol lacks Gate/Source/Drain names and types, and the footprint lands differ from onsemi’s recommendation. The part is not production-ready as-is, and I filed an internal quality report.
Full specifications and findings: MCH3478-TL-H Part Audit
Fix and recheck part
Fix symbol pins
Correct footprint lands
Update description
Run part review
~
Pin Number
1
~
Pin Number
2
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MCH3478-TL-H

MCH3478-TL-H thumbnail
N-Channel Power MOSFET – 30 V N-channel enhancement-mode MOSFET optimized for load switching, DC-DC converters, battery-powered devices, power management, motor control, and embedded switching applications. Features a 30 V drain-to-source voltage (VDS), 2 A continuous drain current, and 165 mΩ maximum RDS(on) at VGS = 4.5 V, with 1.8 V logic-level gate drive compatibility for low-voltage microcontroller interfaces. Offers 1.7 nC typical gate charge, 130 pF typical input capacitance, ultra-fast switching performance, and an integrated body diode for efficient power conversion. Rated for ±12 V gate-to-source voltage, 800 mW power dissipation, 150°C maximum junction temperature, and housed in a 3-pin MCPH3 (SC-70 / SOT-323) surface-mount package. This device is obsolete / not recommended for new designs.
#onsemi #MCH3478TLH #MCH3478 #NChannelMOSFET #LogicLevelMOSFET #PowerMOSFET #LoadSwitch #DCDCConverter #PowerManagement #MotorDriver #SOT323 #EmbeddedSystems

Properties

MCH3478-TL-H

ON Semiconductor

Transistor

datasheet.datasheetarchive.com/originals/distributors/Datasheets-SFU1/DSASFU100015398.pdf

Q

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