N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification

N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB Power MOSFET, N-channel enhancement-mode transistor designed for high-current switching applications. Features a 100 V drain-source voltage rating, 180 A continuous drain current, 3.7 mΩ maximum drain-source on-resistance, and TO-220AB package. #PowerMOSFET #NMOSFET #Infineon #IRFB4110PBF #TO220AB #commonpartslibrary #transistor #tht

N-Channel Power MOSFET – 40 V logic-level N-channel OptiMOS™ 6 power MOSFET optimized for high-efficiency synchronous buck converters, motor drives, battery-powered systems, and industrial power switching. Features a 40 V drain-to-source voltage (VDS), 100 A continuous drain current (TC = 25°C), 1.0 mΩ maximum RDS(on) at VGS = 10 V, and 1.4 mΩ maximum RDS(on) at VGS = 4.5 V. Includes logic-level gate drive, 67 nC typical gate charge, ±20 V gate-source voltage rating, 175°C maximum junction temperature, and 100% avalanche tested for enhanced ruggedness. Housed in an 8-pin PG-TDSON-8 (SuperSO8 5 × 6 mm) surface-mount package. #Infineon #BSC010N04LS6ATMA1 #BSC010N04LS6 #OptiMOS6 #PowerMOSFET #NChannelMOSFET #40V #LogicLevelMOSFET #LowRDSOn #SynchronousBuck #MotorDrive #PowerManagement #EmbeddedSystems

CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 34 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Potential applications • General purpose drives (GPD) • EV Charging • Online UPS/Industrial UPS • Solar power optimizer • String inverter • Energy Storage Systems (ESS) • Welding #CommonPartsLibrary #Transistor #FET #Mosfet #CoolSiC™ G2 IMZC120R040M2H

Six-channel low-side solenoid driver IC from Infineon Technologies. TLE92466EDXUMA1 integrates six constant-current low-side output channels, MOSFET power stages, current sensing, diagnostics, and a protected 32-bit SPI interface for automotive linear solenoid control in transmission, ESC, and active suspension applications. It uses a PG-DSO-36-72 exposed-pad package; per-channel programmed current is up to 1.5 A, dither operation supports up to 1.8 A, and 2.7 A applies to parallel-channel mode. #TLE92466EDXUMA1 #Infineon #AutomotiveIC #SolenoidDriver #CurrentControlIC #TransmissionControl #FunctionalSafety #ISO26262 #AECQ100 #AutomotiveElectronics #PowerManagement #EmbeddedSystems

N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor

Ultra-Low Noise Digital MEMS Microphone with PDM Output – High-performance omnidirectional MEMS microphone designed for voice assistants, smart speakers, conferencing systems, industrial voice interfaces, IoT devices, wearables, automotive applications, and embedded audio systems. Part of the Infineon XENSIV™ microphone family, it features a digital PDM output, 73 dB(A) signal-to-noise ratio (SNR), −26 dBFS sensitivity (±1 dB @ 94 dB SPL), and an acoustic overload point (AOP) of 122 dB SPL, delivering excellent speech intelligibility and high dynamic range. Operates from a 1.62 V to 3.6 V supply with 980 µA typical current consumption, supports a 20 Hz to 19 kHz frequency response, and includes multiple operating modes for power optimization. Features a bottom-port acoustic design, IP57 dust and water resistance, and AEC-Q103 qualification (on demand) for demanding environments. Housed in a compact 5-pad LLGA package (4.0 × 3.0 × 1.2 mm) and specified for operation over a −40°C to +85°C temperature range. #Infineon #IM73D122V01XTMA1 #XENSIV #MEMSMicrophone #DigitalMicrophone #PDM #VoiceInterface #SmartSpeaker #IoT #AudioProcessing #AECQ103 #EmbeddedSystems

N-Channel 100 V 13A (Ta), 38A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PG-TSON-4-2 GaN transistor is a 100 V e-mode power transistor designed for high-speed switching applications, with a 38 A drain current rating and 5.0 mΩ typical drain-source on-resistance. It features 6.1 nC gate charge, zero reverse-recovery charge, and is housed in a PG-TSON-4 industrial-grade 3 × 3 mm package. #GaN #Transistor #GaNHEMT #PowerTransistor #100V #38A #PGTSON4 #Infineon

Smart High-Side Power Switch, PROFET, Single, 16mOhm, 10A, 30V, TO252-5 infineon power switch TO*252*

Smart High-Side Power Switch, PROFET, Single, 100mOhm, 3.5A, 34V, TO-252-4 infineon power load switch TO?252*

N-Channel 40 V 17A (Ta), 49A (Tc), 59A (Tc) 3W (Ta), 38W (Tc) Surface Mount PG-TDSON-8-6 N-channel OptiMOS™ 6 power MOSFET designed for efficient synchronous rectification, ORing, and high-current switching applications. It features a 40 V drain-source rating, low 5.9 mΩ maximum RDS(on) at 10 V gate drive, up to 59 A continuous drain current, 9.4 nC typical gate charge, and a -55°C to +175°C junction temperature range in a compact PG-TDSON-8 (SuperSO8 5×6) package. #MOSFET #NChannelMOSFET #PowerMOSFET #OptiMOS6 #Infineon #40V #SynchronousRectification #PowerManagement #ORing

Bluetooth, WiFi 802.11a/b/g/n/ac, Bluetooth v5.2 Transceiver Module 2.412GHz ~ 2.472GHz, 5.18GHz ~ 5.825GHz Surface Mount Wi-Fi + Bluetooth® module for wireless connectivity, supporting IEEE 802.11a/b/g/n/ac dual-band operation at 2.4 GHz and 5 GHz along with Bluetooth® 5.2 BR/EDR/LE functionality. The LBEE5PK2AE-564 integrates the Infineon CYW4373E chipset, supports SDIO 3.0 and USB 2.0 (shared) interfaces for WLAN, HCI UART/USB 2.0 (shared) and PCM for Bluetooth, operates over a -40°C to +85°C temperature range, and is housed in an 8.0 × 7.8 × 1.15 mm surface-mount module. Up to 433 Mbps data rates are supported using 802.11ac SISO operation with 20 MHz, 40 MHz, and 80 MHz channels. #WiFiModule #BluetoothModule #WirelessConnectivity #IEEE80211ac #Bluetooth52 #DualBand #2_4GHz #5GHz #SDIO #USB #UART #PCM #Murata #CYW4373E #SMDModule

Single-channel high-side N-channel smart power switch for power distribution, supporting a 6 V to 18 V load voltage and up to 11 A continuous output current. Features 8.8 mΩ typical ON resistance, non-inverting ON/OFF control, and integrated overcurrent, overvoltage, short-circuit, and undervoltage lockout (UVLO) protection. Specified for operation over a −40°C to +150°C junction temperature range and housed in a PG-TSDSO-14-22 (14-pin TSSOP exposed pad) package. #Infineon #BTS70081EPPXUMA1 #SmartPowerSwitch #HighSideSwitch #LoadSwitch #PowerDistribution #PROFET #NChannel #11A #PowerManagement #AutomotiveElectronics #TSDSO14

N-Channel 650 V 46A (Tc) 172W (Tc) Through Hole PG-TO247-3-40 The Infineon Technologies IMW65R040M2HXKSA1 is a 650 V SiC MOSFET featuring a typical on-state resistance (RDS(on)) of 40 mΩ. It is optimized for fast switching operation in high-efficiency power stages and is provided in a Kelvin-source power package (TO-247-4), enabling reduced switching losses and improved switching performance. #SiCMOSFET #650V #PowerTransistor #Infineon #CoolSiC #TO2474 #PowerElectronics

ARM® Cortex®-M0+ EZ-PD™ PMG1 Microcontroller IC 32-Bit 48MHz 256KB (256K x 8) FLASH 48-QFN (6x6) USB-C Power Delivery Microcontroller — Infineon’s CYPM1311-48LDXI is an EZ-PD™ PMG1-S3 32-bit Arm® Cortex®-M0+ MCU with integrated USB-C Power Delivery control, supporting USB-PD 3.2 and up to 28 V EPR. It features 256 KB Flash, 32 KB SRAM, 48 MHz operation, USB full-speed, configurable I²C/SPI/UART interfaces, VBUS protection, NFET gate drivers, moisture detection, and hardware cryptography, making it suitable for USB-C devices, docks, power tools, and accessories. #Infineon #CYPM1311 #EZPD #PMG1S3 #USBTypeC #USBPD #PowerDelivery #Microcontroller #MCU #USBPD32 #EPR #QFN48

Power Switch/Driver 1:1 N-Channel 2A PG-TSDSO-14 BTG7090-2EPL High-side power switch designed to provide protected high-side load switching with diagnostic functions for automotive power distribution applications. It features two independent 2 A channels, operates from a 3 V to 28 V supply range, offers 90 mΩ typical RDS(on), adjustable overcurrent limitation up to 4.34 A, analog current sense, digital diagnostics, capacitive load switching mode, and is housed in a PG-TSDSO-14 package. #HighSideSwitch #SmartPowerSwitch #PROFET #LoadSwitch #AutomotiveElectronics #PowerDistribution #DualChannel #CurrentSense #Diagnostics #PGTSDSO14 #Infineon

N-Channel 60 V 52A (Ta), 454A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HDSOP-16-U01 N-channel MOSFET designed for power switching applications, featuring a 60 V drain-source voltage rating and low on-state resistance. The IPTC007N06NM5ATMA1 is a 60 V OptiMOS™ power MOSFET in a TO-Leadless package with a maximum continuous drain current of 240 A and is specified for automotive and industrial power applications. #Infineon #IPTC007N06NM5ATMA1 #NChannelMOSFET #PowerMOSFET #60V #OptiMOS #TOLeadless #PowerSwitching #PCBComponent

Silicon Carbide (SiC) Schottky Diode Array – Dual common-cathode 1200 V Silicon Carbide (SiC) Schottky rectifier optimized for solar inverters, EV chargers, UPS systems, power factor correction (PFC), industrial motor drives, and high-efficiency switch-mode power supplies (SMPS). Features a 1200 V repetitive reverse voltage, 17 A average forward current per diode (34 A total device), and 1.65 V maximum forward voltage at 5 A, delivering virtually zero reverse recovery charge for extremely low switching losses and reduced EMI. Built on Infineon's 5th Generation CoolSiC™ technology, it provides fast switching (<500 ns), excellent surge current capability (140 A), low reverse leakage current (40 µA at 1200 V), high thermal performance, and temperature-independent switching characteristics. Rated for operation over a −55°C to +175°C junction temperature range and housed in a TO-247-3 through-hole package. #Infineon #IDW10G120C5BFKSA1 #CoolSiC #SiCSchottkyDiode #SchottkyRectifier #1200V #PowerElectronics #SolarInverter #MotorDrive #PFC #SMPS #EmbeddedSystems

IGBT Trench Field Stop 1200 V 80 A 483 W Through Hole PG-TO247-3-1 Insulated Gate Bipolar Transistor (IGBT) for high-speed hard-switching power conversion, integrating a soft, fast-recovery anti-parallel diode. It features a 1200 V collector-emitter voltage, 40 A continuous collector current, supports 20–100 kHz switching frequency, operates at junction temperatures up to 175°C, and is housed in a PG-TO247-3 package using TRENCHSTOP™ trench and field-stop technology. #Infineon #IGBT #TRENCHSTOP #HighSpeedSwitching #1200V #40A #TO247 #PowerSemiconductor #HardSwitching #FreewheelingDiode

CY15B102Q-SXE is an Infineon 2 Mbit (256 K × 8) automotive nonvolatile F-RAM with a 25 MHz SPI interface, 2.0–3.6 V operation, high write endurance, and an 8-pin SOIC package. Keywords: CY15B102Q-SXE, SPI F-RAM, 2Mbit memory, automotive memory, SOIC-8

-0.53/+0.95A Id, -20/+20V Vds, P/N-Channel MOSFET, SOT-363, Infineon OptiMOS MOSFET complementary nmos pmos enhanced avalanche AEC Q101 super logic infineon SOT?363*

IRLB4030PBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin TO-220AB Infineon

IPB320P10LMATMA1 is an Infineon 100 V P-channel power MOSFET rated up to 63 A, with 32 mΩ max RDS(on), designed for high-side switching and reverse-polarity protection in a surface-mount D²PAK / TO-263-3 package. Keywords: IPB320P10LMATMA1, P-channel MOSFET, 100V MOSFET, 63A MOSFET, D2PAK TO-263P-Channel 100 V 6.5A (Ta), 63A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3

IRF4905STRLPBF https://www.infineon.com/dgdl/irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. 4.83 Infineon IRF4905STRLPBF 942-IRF4905STRLPBF https://www.mouser.co.uk/ProductDetail/Infineon-Technologies/IRF4905STRLPBF?qs=9%252BKlkBgLFf1nPwXuyqKOOQ%3D%3D IRF4905STRLPBF https://www.arrow.com/en/products/irf4905strlpbf/infineon-technologies-ag?region=nac

Infineon Technologies IPM018N10NM5LF2AUMA1 OptiMOS 5 Linear FET 2 N-channel MOSFET, 100 V, RDS(on) max 1.85 mOhm at VGS=10 V and ID=100 A, PG-HSOG-4 / mTOLG 8x8 PG-HSOG-4 / mTOLG 100 V 285 A at TC=25 C 1.85 mOhm max @ 10 V, 100 A 178 nC max @ 10 V Active and preferred