The Datasheet URL is already set to the official HTTPS Infineon asset URL. I’m updating the terminal metadata now: source/drain as passive power terminals and gate as input.
Updated the terminal pin metadata and verified the changes in the schematic. The Datasheet URL was already updated to the official HTTPS Infineon asset URL, so no additional URL mutation was needed.
Open items:
The part validation review returned no listed checks/results in the current project state, but the review timestamp updated successfully.
Pin metadata now matches the datasheet: Source pins 1–3 = Passive, Gate pin 4 = Input, Drain pins 5–8 + exposed pad = Passive.
Suggested next steps:
Re-open the project’s review panel to confirm whether Flux surfaces any UI-only part review warnings.
Publish/update the part if the review panel is clean.
Optionally add more electrical properties like VDS, RDS(on), Qg, VGS(max), and package case for richer library search.
Wirelessly connects nets on schematic. Used to organize schematics and separate functional blocks. To wirelessly connect net portals, give them same designator. #portal
General Purpose Thick Film Standard Power
and High-Power Chip Resistor
47 kOhms ±5% 0.125W, 1/8W Chip Resistor 0805 (2012 Metric) Automotive AEC-Q200 Thick Film
Features:
- RMCF – standard power ratings
- RMCP – high power ratings
- Nickel barrier terminations standard
- Power derating from 100% at 70ºC to zero at +155ºC
- RoHS compliant, REACH compliant, and halogen free
- AEC-Q200 compliant
N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7
BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications.
Key Features
N-Channel Enhancement Mode MOSFET
100V Drain-to-Source Voltage (VDS)
Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V
Continuous Drain Current up to 100A (package limited)
Optimized for high-performance SMPS and synchronous rectification
Low gate charge for improved switching efficiency
100% avalanche tested for enhanced robustness
Superior thermal resistance and power dissipation
Wide operating junction temperature range: -55°C to +150°C
RoHS compliant and halogen-free
Compact PG-TDSON-8 / SuperSO8 package for high power density designs
Typical Applications
DC-DC Converters
Synchronous Rectifiers
Motor Control
Battery Management Systems (BMS)
Telecom and Industrial Power Supplies
Solar Power Systems
High-Current Switching Circuits