N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation.
This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets.
The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry.
Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components.
Spec Sheet
Identification
Part Number: IRLR7843TRPBF
Device Family: HEXFET Power MOSFET
Manufacturer: Infineon Technologies
Functional Classification
Device Type: Power MOSFET
Channel Type: N-channel
Technology: Trench-gate HEXFET (IR MOSFET legacy technology)
Logic Level Compatibility: Logic-level gate drive compatible
Electrical Characteristics
Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications
On-Resistance: Ultra-low on-resistance class
Drain Current Capability: High continuous current class
Gate Charge: Low gate charge, optimized for fast switching
Gate Impedance: Ultra-low gate impedance
Avalanche Characteristics: Fully characterized avalanche voltage and current rating
Switching & Application Behavior
Primary Application: Synchronous buck converter switching stages
Suitable Position: High-side and low-side switch positions
Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems
Thermal & Mechanical
Package Type: Surface-mount power package with exposed thermal tab (DPAK-style)
Mounting: Surface mount technology (SMT)
Thermal Path: Tab-based conduction to PCB for heat dissipation
Environmental & Qualification
RoHS Compliance: Yes
Lifecycle Status: Active production
Packaging Format
Supply Format: Tape-and-reel, per part suffix designation