Mini 2.45 GHz Antenna The 2450AT18A100E is a high-frequency ceramic SMT antenna featuring a small 3.2 mm × 1.6 mm × 1.3 mm package, optimized for space-constrained RF designs. It operates from 2400 MHz to 2500 MHz with a 50 Ω impedance and provides a compact alternative to traditional PCB trace antennas while maintaining reliable RF performance. Key Features Operating Frequency: 2400 MHz – 2500 MHz (2.4 GHz ISM Band) Center Frequency: 2450 MHz Antenna Type: Mini Ceramic Chip Antenna / SMT RF Antenna Package Size: 3.2 mm × 1.6 mm × 1.3 mm Impedance: 50 Ω Peak Gain: Approximately +0.5 dBi (typical) Average Radiation Efficiency: Approximately 76% (based on Johanson evaluation board) Maximum Input Power: 2 W continuous wave (CW) Operating Temperature Range: -40 °C to +125 °C Mounting Type: Surface Mount Technology (SMT) Applications: Bluetooth / BLE devices Wi-Fi 2.4 GHz modules Zigbee / IEEE 802.15.4 systems IoT sensors and embedded wireless products #2450AT18A100E #JohansonTechnology #ChipAntenna #SMTAntenna #RFDesign #2GHzAntenna #Bluetooth #WiFi #Zigbee #IoT #WirelessCommunication #EmbeddedSystems #PCBDesign #RFAntenna #Antena #Chip #SurfaceMount

QFN-68(7x7) Power Management - Specialized ROHS The RK806-1 is a multi-channel PMIC designed to deliver and manage power for modern embedded platforms. It integrates multiple high-efficiency DC-DC buck converters, LDO regulators, and a configurable power sequencing controller in a compact QFN-68 package. It is tightly coupled with Rockchip SoCs and is responsible for generating stable voltage rails for CPU cores, GPU, DDR memory, and peripheral blocks. ⭐ Key Features ⚡ 1. High-Integration Power Architecture Multiple synchronous buck converters (high-current rails for CPU/GPU) Several LDO regulators for low-noise analog and IO domains Supports dynamic voltage scaling (DVS) for performance optimization 🔌 2. Wide Output Capability Output voltage range: ~0.5 V to 3.4 V per channel Designed for modern low-voltage SoC power domains Supports both high-current and low-noise power rails 🧠 3. Programmable Power Sequencing OTP / register-configurable power-up & power-down sequence Ensures safe startup for multi-rail SoCs Supports synchronized sequencing with multiple PMICs 📡 4. Digital Control Interface I²C and SPI interface for configuration and control Real-time voltage adjustment per processor demand Register-based control for power modes and telemetry 🛡️ 5. Protection & Reliability Features Over-voltage protection (OVP) Over-current protection (OCP) Thermal shutdown protection Soft-start for inrush current control ⚙️ 6. Efficiency & Performance Optimizations High-frequency switching (~MHz range) for smaller external components Fast transient response for CPU load changes Low standby current for power-sensitive designs 📦 7. Package & Integration QFN-68 (7×7 mm) compact package High thermal efficiency for dense PCB layouts Minimal external components required 📌 Typical Applications Single-board computers (SBCs) AI edge computing devices Tablets and industrial embedded systems Consumer electronics using Rockchip SoCs (e.g., RK3588 platforms) #commonpartslibrary #integratedcircuit #powermanagement

64 Position Female Connector PCI Express™ Gold 0.039" (1.00mm) Black The PCIE-064-02-X-D-TH is a high-density PCI Express edge connector designed for reliable board-to-board and card-to-host connections in high-speed data communication applications. Manufactured by Samtec, this connector supports PCI Express signaling standards while providing robust mechanical and electrical performance for high-frequency, high-bandwidth systems. Its through-hole mounting and dual-row design ensure secure attachment to the PCB, high mating retention, and long operational life. The connector is ideal for computer peripherals, server systems, embedded computing platforms, networking devices, and industrial electronic equipment where signal integrity, mechanical reliability, and high-density interconnects are critical. Engineering Specifications Manufacturer: Samtec Part Number: PCIE-064-02-X-D-TH Series: PCI Express Edge Connector Connector Type: Board-to-Board / Card Edge Connector Contact Configuration: Dual-Row High-Density Contacts Mounting Style: Through-Hole Contact Material: Copper Alloy Contact Finish: Gold-Plated Contact Surface Housing Material: High-Temperature Thermoplastic Signal Performance: PCI Express Standard Compliant Electrical Performance: High-Speed Data Transmission Mechanical Durability: High Mating Cycle Life Orientation: Right Angle / Standard Edge Mount Operating Temperature Range: Industrial Grade RoHS Compliant: Yes Applications: PCI Express Expansion Cards, High-Speed Computing Systems, Server and Data Center Hardware, Embedded Platforms, Networking Equipment, Industrial Computing, High-Bandwidth Digital Interfaces, Board-Level Interconnects Key Features High-density dual-row PCIe edge contacts Through-hole mounting for robust PCB attachment Gold-plated contact interface for reliable signal transmission Supports high-speed PCI Express signaling Compact, high-density design for space-constrained PCBs Long mechanical life with repeated mating cycles Compatible with standard PCI Express cards and connectors Reliable operation in industrial and commercial environments Ideal for embedded computing, server, and networking applications Ensures signal integrity for high-bandwidth data communication #PCIE06402XDTH #Samtec #PCIeConnector #EdgeConnector #BoardToBoard #HighSpeedInterconnect #HighDensityConnector #ThroughHole #IndustrialElectronics #EmbeddedSystems #ServerHardware #NetworkingEquipment #ElectronicComponents #PCBDesign #HighBandwidth #DataCommunication #PCIExpress #ExpansionCardConnector #MechanicalReliability #ElectronicInterconnect

2.2µH Unshielded Molded Inductor 17 A 3.7mOhm 2-SMD, J-Lead The MPL-AY1265-2R2 is a 2.2 µH surface-mount molded power inductor from Monolithic Power Systems (MPS). It is designed for high-current DC-DC switching power supplies and power management applications requiring low DC resistance (DCR), high efficiency, and stable inductance over a wide operating temperature range. Its molded construction minimizes audible noise and provides excellent mechanical reliability for compact, high-performance electronic designs. Key Features 2.2 µH inductance with ±20% tolerance High rated current: up to 17 A Low DC resistance: 3.7 mΩ typ. (4.3 mΩ max.) Soft saturation characteristics for improved reliability Molded construction for enhanced durability and reduced EMI Low audible noise during switching operation Stable performance across a wide temperature range Operating temperature: −40°C to +155°C Compact SMD package: 13.5 × 12.6 × 6.2 mm RoHS/REACH compliant and halogen-free Typical Applications Battery-powered devices Portable electronics Embedded computing systems High-current switching mode power supplies (SMPS) High-frequency DC-DC converters Point-of-load (POL) converters FPGA power rails #MoldedInductor #PowerInductor #2_2uH #HighCurrent #LowDCR #SMPS #DCDCConverter #PowerManagement #SMD #MonolithicPowerSystems #RoHS #EmbeddedSystems

1 µF ±10% 16V Ceramic Capacitor X7R 0603 (1608 Metric) The CGA3E1X7R1C105K080AC is a multilayer ceramic chip capacitor designed for high-reliability electronic applications requiring stable capacitance characteristics, compact form factor, and dependable performance under varying operating conditions. The component utilizes advanced ceramic dielectric technology to provide consistent electrical behavior with low losses and high insulation resistance suitable for signal filtering, decoupling, bypassing, and general-purpose circuit stabilization. The capacitor is constructed with a multilayer monolithic structure that enables high capacitance density while maintaining excellent mechanical integrity and thermal stability. Its surface-mount configuration supports automated assembly processes and high-density printed circuit board layouts commonly used in industrial, automotive, telecommunications, and consumer electronic systems. The dielectric system is engineered to maintain capacitance stability across a broad temperature range and varying electrical conditions while minimizing impedance and noise within electronic circuits. The component exhibits reliable frequency response characteristics and supports efficient suppression of voltage fluctuations and electromagnetic interference in high-speed and high-frequency applications. External terminations are designed to provide strong solderability, mechanical durability, and resistance to thermal cycling stresses during assembly and operation. The component is compatible with standard reflow soldering processes and is intended for long-term operation in environments subject to temperature variation, vibration, and electrical loading. The CGA3E1X7R1C105K080AC is suitable for use in power management circuits, communication equipment, embedded control systems, automotive electronics, and other applications requiring compact passive components with stable electrical performance and high reliability. #CommonPartsLibrary #CeramicCapacitors

N-Channel 200 V 120A (Tc) 714W (Tc) Through Hole TO-247AD (IXFH) # IXFH120N15P ## General Description The IXFH120N15P is a high-current N-channel power MOSFET manufactured by Littelfuse IXYS. It is designed for demanding power switching and power conversion applications requiring low conduction losses, fast switching performance, and high current-handling capability. Built using advanced power MOSFET technology, the device provides excellent efficiency, ruggedness, and thermal performance for industrial power systems, motor drives, battery management equipment, welding systems, uninterruptible power supplies, renewable energy systems, and high-power DC switching applications. Its robust construction and low on-state resistance make it particularly suitable for designs requiring high efficiency and reliable operation under heavy load conditions. ## Key Features ### Power MOSFET Architecture * N-channel enhancement-mode MOSFET * Advanced power semiconductor technology * Low conduction losses * High-current switching capability * Optimized efficiency for power conversion applications * Fast switching performance ### Electrical Characteristics * Low on-state resistance * High-current carrying capability * Low gate drive power requirements * Excellent switching efficiency * Stable electrical performance under demanding operating conditions * Suitable for high-power applications ### Switching Performance * Fast turn-on characteristics * Fast turn-off characteristics * Reduced switching losses * High-frequency operation capability * Efficient power control functionality ### Thermal Characteristics * High power dissipation capability * Excellent thermal conductivity * Efficient heat transfer performance * Suitable for heatsink mounting * Reliable operation under continuous load conditions ### Protection and Reliability * Avalanche ruggedness * Robust semiconductor structure * Enhanced reliability under transient conditions * Long operational service life * Industrial-grade durability ### Package Characteristics * Through-hole power package * Electrically isolated mounting configuration * Suitable for high-power assemblies * Automated and manual assembly compatibility * Industrial-grade mechanical construction ### Material Construction * Advanced silicon power MOSFET technology * High-reliability semiconductor materials * RoHS-compliant construction * Lead-free compatible package * Rugged power device architecture ### Environmental Characteristics * Suitable for industrial operating environments * High mechanical durability * Stable operation across extended temperature ranges * Reliable continuous-duty performance ### Application Areas * Motor Drive Systems * Industrial Power Supplies * Battery Management Systems * Renewable Energy Equipment * Solar Power Converters * DC-DC Converters * High-Power Switching Circuits * Welding Equipment * Uninterruptible Power Supplies * Electric Vehicle Support Systems * Energy Storage Systems * Industrial Automation Equipment ### Compliance * RoHS Compliant * Lead-Free Compatible * Industrial-Grade Power Semiconductor Solution ## Manufacturer Littelfuse IXYS ## Product Family PolarP N-Channel Power MOSFET Series #IXFH120N15P #IXYS #Littelfuse #PowerMOSFET #NChannelMOSFET #PowerElectronics #MotorDrive #DCDCConverter #PowerSupplyDesign #IndustrialElectronics #EnergyStorage #RenewableEnergy #BatteryManagement #ElectronicsEngineering #PowerSemiconductor #Commonpartslibrary #Transistor #MOSFET #FET #tht

Low-Side Gate Driver IC Inverting TO-220-5 The TC4421AVAT is a high-speed MOSFET driver designed to efficiently drive power MOSFETs and IGBTs in switching applications. It features a low-impedance push-pull output stage capable of sourcing and sinking significant current, enabling rapid charging and discharging of gate capacitances for fast switching. The device supports both high- and low-side configurations, providing flexibility for power supply, motor control, DC-DC conversion, and class-D amplifier designs. Its robust design ensures reliable operation under high switching frequencies, minimizing losses and improving overall system efficiency. Engineering Specifications Manufacturer: Microchip Technology Part Number: TC4421AVAT Device Type: High-Speed MOSFET Driver Output Stage: Push-Pull Drive Capability: High Source and Sink Current Input Logic Compatibility: CMOS/TTL Compatible Supply Voltage Range: Wide Operating Range Propagation Delay: Low Rise/Fall Time: Fast Switching Output Voltage Swing: Rail-to-Rail Operating Frequency: High-Frequency Switching Applications Package Type: SOIC (Small Outline Integrated Circuit) Mounting Style: Surface Mount Thermal Performance: Designed for Efficient Heat Dissipation Protection Features: Undervoltage Lockout, Robust Against Overload Operating Temperature Range: Industrial Grade RoHS Compliant: Yes Applications: Power MOSFET/IGBT Switching, DC-DC Converters, Motor Control, Power Supplies, Class-D Audio Amplifiers, Pulse-Width Modulation Circuits, High-Speed Switching Circuits Key Features High current output for rapid gate charging and discharging CMOS/TTL input logic compatible Fast propagation delay and rise/fall times Rail-to-rail output voltage swing Suitable for high-speed, high-efficiency switching designs Reliable operation in industrial and commercial environments Compact surface-mount package for easy PCB integration Supports both high-side and low-side MOSFET driving Robust against short-term overloads and undervoltage conditions #TC4421AVAT #MicrochipTechnology #MOSFETDriver #IGBTDriver #HighSpeedDriver #PWMDriver #SwitchingPower #DC_DCConverter #MotorControl #PowerElectronics #IndustrialElectronics #SurfaceMount #ElectronicComponents #HighCurrentDriver #FastSwitching #EmbeddedSystems #PCBDesign

IGBT 460 V 20 A 107 W Surface Mount LPDS #CommonPartsLibrary #Transistor #IGBT The RGPR20NS43HRTL specification defines the engineering requirements for an ultrafast recovery power rectifier designed for high-efficiency power conversion and switching applications. This specification establishes the functional, electrical, mechanical, thermal, environmental, and quality requirements necessary to ensure reliable rectification performance, low switching losses, and long-term operational stability in power electronic systems. The device is intended for use in switch-mode power supplies, power factor correction circuits, motor drives, industrial power equipment, and other high-frequency power conversion applications. It provides efficient current rectification with fast reverse recovery characteristics, enabling improved system efficiency and reduced electromagnetic interference in demanding electrical environments. Engineering Requirements The rectifier shall be manufactured using qualified semiconductor fabrication processes and high-quality materials to ensure consistent electrical performance, thermal stability, and long service life. The device shall maintain reliable operation under specified voltage, current, and temperature conditions without degradation of functional performance. Electrical characteristics shall provide low forward voltage drop, fast reverse recovery time, and high surge current capability to support efficient high-frequency switching applications. The device shall maintain stable electrical behavior under repetitive switching cycles and transient operating conditions. Thermal performance shall support effective heat dissipation through the package structure and recommended mounting configuration. The component shall operate within specified junction temperature limits while maintaining electrical integrity and long-term reliability under continuous or intermittent load conditions. Mechanical construction shall be suitable for standard surface-mount or through-hole assembly, depending on the package configuration, and shall withstand soldering, handling, vibration, and thermal cycling without mechanical degradation. Workmanship shall be free from defects including contamination, cracks, bond failures, corrosion, or structural inconsistencies that could adversely affect electrical or mechanical performance. Inspection, validation, and testing shall be conducted using calibrated equipment and controlled quality procedures to verify compliance with all applicable engineering and manufacturing requirements. Any deviation from this specification shall require formal engineering evaluation, documented technical justification, and approval through the established engineering change control process. Documentation Supporting documentation shall include engineering drawings, electrical performance data, thermal characterization reports, qualification records, inspection reports, and revision-controlled manufacturing documentation. All documentation shall be maintained under formal configuration management and quality assurance systems to ensure complete product traceability. Revision Control Any modification to this specification shall be managed through the formal engineering change management process. All revisions shall undergo technical review, validation, and approval before implementation to ensure continued compliance with design intent and applicable engineering standards. #EngineeringSpecification #PowerRectifier #UltrafastRecoveryDiode #PowerElectronics #SwitchModePowerSupply #IndustrialElectronics #Semiconductor #ThermalManagement #QualityAssurance #EngineeringDocumentation

1 Ohms ±1% 2W Chip Resistor 2512 (6332 Metric) Current Sense Thick Film The CRM2512-FX-1R00ELF specification defines the engineering requirements for a surface-mount current sense resistor designed for precision current measurement and power management applications. This specification establishes the functional, electrical, mechanical, thermal, environmental, and quality requirements necessary to ensure accurate resistance performance, efficient power dissipation, and long-term operational reliability in electronic systems. The component is intended for use in power supplies, battery management systems, motor control circuits, industrial automation equipment, and embedded electronic applications requiring precise current monitoring. The resistor provides a low-resistance element for current sensing while maintaining high measurement accuracy, thermal stability, and compatibility with automated surface-mount manufacturing processes. Engineering Requirements The resistor shall be manufactured using high-quality resistive materials and controlled fabrication processes to ensure stable resistance characteristics, low temperature coefficient, and reliable long-term performance. The construction shall provide consistent electrical behavior throughout the specified operating conditions without significant drift or degradation. Electrical characteristics shall ensure accurate resistance value, stable current sensing performance, and low inductance suitable for high-frequency switching environments. The component shall maintain its specified tolerance and thermal performance under continuous rated power and transient load conditions. Thermal performance shall support efficient heat dissipation through the package structure and printed circuit board interface. The resistor shall withstand normal solder reflow processes and maintain structural integrity during thermal cycling, vibration, and mechanical handling. Mechanical construction shall be compatible with standard surface-mount assembly processes and shall provide reliable solder joint formation. Workmanship shall be free from defects including cracks, delamination, contamination, plating irregularities, or structural inconsistencies that could adversely affect electrical or mechanical performance. Inspection, validation, and testing shall be conducted using calibrated equipment and controlled quality procedures to verify compliance with all applicable engineering and manufacturing requirements. Any deviation from this specification shall require formal engineering evaluation, documented technical justification, and approval through the established engineering change control process. Documentation Supporting documentation shall include engineering drawings, electrical performance specifications, thermal characterization data, qualification reports, inspection records, material declarations, and revision-controlled manufacturing documentation. All documentation shall be maintained under formal configuration management and quality assurance systems to ensure complete product traceability. Revision Control Any modification to this specification shall be managed through the formal engineering change management process. All revisions shall undergo technical review, validation, and approval before implementation to ensure continued compliance with design intent and applicable engineering standards. #EngineeringSpecification #CurrentSenseResistor #PowerElectronics #SurfaceMount #PrecisionResistor #IndustrialElectronics #PowerManagement #QualityAssurance #EngineeringDocumentation #ElectronicComponents

4.7 µH Unshielded Drum Core, Wirewound Inductor 62 A 0.95mOhm Max Vertical, 2 PC Pin The IHDM1008BCEV4R7M30 is a surface-mount power inductor designed for energy storage and filtering in switching power supplies and DC-DC converter circuits. It provides stable inductance characteristics under varying current conditions, making it suitable for applications requiring efficient power conversion and noise suppression. The device is constructed using a magnetically shielded structure to minimize electromagnetic interference and ensure reliable operation in densely populated circuit environments. Its design supports high current handling capability while maintaining low core losses, contributing to overall system efficiency. Functional Overview The inductor stores energy in its magnetic field when current flows through it and releases that energy when the current changes. This behavior is essential for smoothing current in switching regulators and maintaining stable voltage levels in power circuits. Its low resistance winding helps reduce power loss, while the magnetic shielding limits flux leakage, improving performance in sensitive electronic systems. The component is optimized for high-frequency operation typically found in modern power management designs. Electrical Characteristics The device provides a fixed inductance value with stable performance across a range of operating currents. It supports relatively high saturation current levels, allowing it to function effectively in power circuits without significant degradation of inductance. Low direct current resistance contributes to improved efficiency and reduced heat generation. The inductor is designed to maintain consistent electrical behavior across typical operating temperatures and frequencies used in switching applications. Interface Requirements The component features standard surface-mount terminals for direct placement onto printed circuit boards. Proper soldering and pad design are required to ensure mechanical stability and optimal electrical performance. Placement considerations should include minimizing loop area and proximity to switching elements to reduce noise and maximize efficiency. Operating Conditions The inductor is intended for operation across a wide temperature range suitable for consumer and industrial electronics. It is capable of maintaining performance under continuous load conditions and varying thermal environments. Adequate thermal management and airflow may be necessary in high-current applications to prevent excessive temperature rise. Protection and Reliability Features The device is constructed with durable materials to ensure long-term reliability under electrical and thermal stress. Its magnetically shielded design reduces susceptibility to external interference and limits emissions that could affect nearby components. It is designed to withstand standard handling and soldering processes associated with surface-mount assembly. Packaging and Integration The IHDM1008BCEV4R7M30 is provided in a compact surface-mount package optimized for automated assembly processes. Its form factor allows efficient use of board space while supporting high-performance power designs. The package design ensures secure mounting and consistent electrical contact in high-density circuit layouts. Applications Typical applications include DC-DC converters, voltage regulator modules, power management circuits, filtering stages, and energy storage elements in portable devices, industrial equipment, and communication systems. #commonpartslibrary #inductors

SMA Connector Receptacle, Female Socket 50 Ohms Board Edge, End Launch Solder SMA RF connector, straight end-launch jack designed for PCB mounting and coaxial signal connection. This 50 Ω connector supports high-frequency applications up to 18 GHz, features a threaded coupling mechanism, solder termination, and is designed for PCB thicknesses up to 0.085 in (2.16 mm). #RFConnector #SMAConnector #CoaxialConnector #PCBMount #AmphenolRF

dsPIC dsPIC™ 33CK, Functional Safety (FuSa) Microcontroller IC 16-Bit 100MHz 256KB (256K x 8) FLASH 48-UQFN (6x6) 28/36/48/64/80-Pin Digital Signal Controllers with High-Resolution PWM and CAN Flexible Data (CAN FD) Operating Conditions • 3.0V to 3.6V, -40°C to +125°C, DC to 100 MIPS • 3.0V to 3.6V, -40°C to +150°C, DC to 70 MIPS Core: 16-Bit dsPIC33CK CPU • 32-256 Kbytes of Program Flash with ECC and 8-24K RAM • Fast 6-Cycle Divide • LiveUpdate • Code Efficient (C and Assembly) Architecture • 40-Bit Wide Accumulators • Single-Cycle (MAC/MPY) with Dual Data Fetch • Single-Cycle, Mixed-Sign MUL Plus Hardware Divide • 32-Bit Multiply Support • Four Sets of Interrupt Context Saving Registers which Include Accumulator and STATUS for Fast Interrupt Handling • Zero Overhead Looping • RAM Memory Built-In Self-Test (MBIST) Clock Management • Internal Oscillator • Programmable PLLs and Oscillator Clock Sources • Reference Clock Output • Fail-Safe Clock Monitor (FSCM) • Fast Wake-up and Start-up • Backup Internal Oscillator Power Management • Low-Power Management Modes (Sleep, Idle, Doze) • Integrated Power-on Reset and Brown-out Reset High-Speed PWM • Eight PWM Pairs • Up to 250 ps PWM Resolution • Dead Time for Rising and Falling Edges • Dead-Time Compensation • Clock Chopping for High-Frequency Operation • PWM Support for: - DC/DC, AC/DC, inverters, PFC, lighting - BLDC, PMSM, ACIM, SRM motors • Fault and Current Limit Inputs • Flexible Trigger Configuration for ADC Triggering Timers/Output Compare/Input Capture • One General Purpose Timer • Peripheral Trigger Generator (PTG): - Up to 15 trigger sources to other peripheral modules - CPU independent state machine-based instruction sequencer • Nine MCCP/SCCP modules which Include Timer, Capture/Compare and PWM: - One MCCP - Eight SCCPs - 16 or 32-bit time base - 16 or 32-bit capture - 4-deep capture buffer • Fully Asynchronous Operation, Available in Sleep Modes #CommonPartsLibrary #IntegratedCircuit #Microcontroller #DSPIC33CK256MP

Diode 40 V 10A Through Hole TO-220AC The SB1040_T0_00001 is a high-efficiency Schottky Barrier Rectifier diode manufactured by Panjit International Inc. . It is designed for fast switching and low power loss applications such as switching power supplies, DC-DC converters, freewheeling circuits, and reverse polarity protection. Its Schottky technology provides a low forward voltage drop, helping improve overall system efficiency and reduce heat generation. Key Features Schottky barrier rectifier technology Low forward voltage drop: typically 0.55V @ 10A High average forward current capability: 10A Reverse voltage rating: 40V Fast switching / fast recovery performance Low power loss and improved efficiency Wide operating junction temperature range: -55°C to +150°C Through-hole TO-220AC / TO-220-2 package Suitable for high-frequency power applications RoHS compliant #CommonPartsLibrary #Diode #Schottky

GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion

dsPIC dsPIC™ 33CK, Functional Safety (FuSa) Microcontroller IC 16-Bit 100MHz 128KB (128K x 8) FLASH 48-UQFN (6x6) 28/36/48/64/80-Pin Digital Signal Controllers with High-Resolution PWM and CAN Flexible Data (CAN FD) perating Conditions • 3.0V to 3.6V, -40°C to +125°C, DC to 100 MIPS • 3.0V to 3.6V, -40°C to +150°C, DC to 70 MIPS Core: 16-Bit dsPIC33CK CPU • 32-256 Kbytes of Program Flash with ECC and 8-24K RAM • Fast 6-Cycle Divide • LiveUpdate • Code Efficient (C and Assembly) Architecture • 40-Bit Wide Accumulators • Single-Cycle (MAC/MPY) with Dual Data Fetch • Single-Cycle, Mixed-Sign MUL Plus Hardware Divide • 32-Bit Multiply Support • Four Sets of Interrupt Context Saving Registers which Include Accumulator and STATUS for Fast Interrupt Handling • Zero Overhead Looping • RAM Memory Built-In Self-Test (MBIST) Clock Management • Internal Oscillator • Programmable PLLs and Oscillator Clock Sources • Reference Clock Output • Fail-Safe Clock Monitor (FSCM) • Fast Wake-up and Start-up • Backup Internal Oscillator Power Management • Low-Power Management Modes (Sleep, Idle, Doze) • Integrated Power-on Reset and Brown-out Reset High-Speed PWM • Eight PWM Pairs • Up to 250 ps PWM Resolution • Dead Time for Rising and Falling Edges • Dead-Time Compensation • Clock Chopping for High-Frequency Operation • PWM Support for: - DC/DC, AC/DC, inverters, PFC, lighting - BLDC, PMSM, ACIM, SRM motors • Fault and Current Limit Inputs • Flexible Trigger Configuration for ADC Triggering Timers/Output Compare/Input Capture • One General Purpose Timer • Peripheral Trigger Generator (PTG): - Up to 15 trigger sources to other peripheral modules - CPU independent state machine-based instruction sequencer • Nine MCCP/SCCP modules which Include Timer, Capture/Compare and PWM: - One MCCP - Eight SCCPs - 16 or 32-bit time base - 16 or 32-bit capture - 4-deep capture buffer • Fully Asynchronous Operation, Available in Sleep Modes

7.2 µH Shielded Drum Core, Wirewound Inductor 7.9 A 12.8mOhm Max Nonstandard # 7447798720 ## General Description The 7447798720 is a high-performance power inductor manufactured by Würth Elektronik as part of the WE-MAPI series. It is designed for energy storage, filtering, and power conversion applications in modern switching power supplies and DC-DC converter circuits. The component features a magnetically shielded construction that minimizes electromagnetic interference while maintaining excellent current handling capability and low power losses. Its compact surface-mount design and robust mechanical structure make it suitable for industrial automation equipment, telecommunications systems, embedded electronics, automotive-support applications, consumer devices, and high-efficiency power management systems. The inductor is optimized for use in applications requiring stable inductance, low DC resistance, and reliable performance under varying load conditions. ## Key Features ### Magnetic Characteristics * Magnetically shielded construction * Stable inductance performance * High-current handling capability * Low magnetic flux leakage * Optimized energy storage capability * Suitable for high-frequency switching applications ### Electrical Characteristics * Low DC resistance * High efficiency operation * Low core losses * Stable electrical performance * Excellent current saturation behavior * Reliable operation in power conversion circuits ### Mechanical Characteristics * Surface-mount package * Compact footprint * Robust mechanical construction * Automated assembly compatible * High-density PCB design support ### Material Construction * Metal alloy core technology * Shielded magnetic structure * High-temperature materials * RoHS-compliant construction * Lead-free compatible design ### Thermal Characteristics * Efficient heat dissipation * Stable operation under continuous load * Suitable for demanding power applications * Reliable performance across industrial operating conditions ### Environmental Characteristics * Industrial-grade reliability * Long operational service life * Resistance to mechanical stress * Suitable for harsh electronic operating environments ### Application Areas * DC-DC Converters * Switching Power Supplies * Point-of-Load Regulators * Industrial Automation Equipment * Telecommunications Systems * Embedded Electronics * Power Distribution Modules * Consumer Electronics * Energy Management Systems * Battery-Powered Devices * Motor Control Systems * Power Filtering Applications ### Compliance * RoHS Compliant * Lead-Free Compatible * Industrial-Grade Power Inductor Solution ## Manufacturer Würth Elektronik ## Product Family WE-MAPI Molded Power Inductor Series #7447798720 #WurthElektronik #WEMAPI #PowerInductor #ShieldedInductor #SMDInductor #PowerElectronics #DCDCConverter #SwitchingPowerSupply #EmbeddedSystems #IndustrialElectronics #PowerManagement #PCBDesign #ElectronicsEngineering #EnergyStorage

10 µH Shielded Molded Inductor 15.5 A 14.75mOhm Max Nonstandard The XAL1010-103MED specification defines the engineering requirements for a shielded power inductor designed for high-efficiency energy storage and power conversion applications. This specification establishes the functional, electrical, mechanical, thermal, environmental, and quality requirements necessary to ensure stable inductance characteristics, efficient current handling, and long-term operational reliability in power electronic systems. The component is intended for use in DC-DC converters, voltage regulators, power management circuits, industrial control equipment, automotive electronics, and embedded systems requiring compact, high-current inductive components. The magnetically shielded construction minimizes electromagnetic interference while supporting efficient energy transfer and stable performance in high-frequency switching applications. Engineering Requirements The power inductor shall be manufactured using high-quality magnetic core materials and precision-wound conductors to ensure consistent inductance, low core losses, and reliable current-carrying capability. The construction shall maintain stable electrical performance under specified operating voltage, current, frequency, and temperature conditions. Electrical characteristics shall provide accurate inductance values, low direct current resistance, high saturation current capability, and low electromagnetic emissions. The component shall maintain stable performance during continuous operation, transient loading, and thermal cycling without significant degradation of inductance or efficiency. Thermal performance shall support effective heat dissipation and continuous operation within the specified temperature range while maintaining structural integrity and electrical characteristics. The shielded construction shall minimize magnetic field leakage and improve electromagnetic compatibility within densely populated electronic assemblies. Mechanical construction shall be suitable for surface-mount assembly and compatible with automated manufacturing processes. The component shall withstand solder reflow, vibration, mechanical shock, and handling without deformation or degradation of electrical performance. Workmanship shall be free from defects including cracks, contamination, core damage, winding irregularities, or structural inconsistencies. Inspection, validation, and testing shall be conducted using calibrated equipment and controlled quality procedures to verify compliance with all applicable engineering and manufacturing requirements. Any deviation from this specification shall require formal engineering evaluation, documented technical justification, and approval through the established engineering change control process. Documentation Supporting documentation shall include engineering drawings, electrical specifications, magnetic characterization data, thermal performance reports, qualification records, inspection reports, material declarations, and revision-controlled manufacturing documentation. All documentation shall be maintained under formal configuration management and quality assurance systems to ensure complete product traceability. Revision Control Any modification to this specification shall be managed through the formal engineering change management process. All revisions shall undergo technical review, validation, and approval before implementation to ensure continued compliance with design intent and applicable engineering standards. #EngineeringSpecification #PowerInductor #ShieldedInductor #PowerElectronics #DCDCConverter #PowerManagement #Magnetics #IndustrialElectronics #QualityAssurance #EngineeringDocumentation #CommonPartsLibrary #Inductor #XAL1010

Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin The 2SC5171 is a high-voltage, high-speed NPN bipolar junction transistor designed for switching and amplification applications. It is commonly used in power regulation circuits, switching power supplies, and high-voltage driver stages due to its fast switching characteristics and high collector-emitter voltage capability. The device is typically housed in a TO-220 package, providing good thermal performance for medium to high power applications. Key Features High collector-emitter voltage capability Fast switching performance High current handling capability Low saturation voltage Suitable for high-frequency operation Absolute Maximum Ratings Collector-Emitter Voltage (V_CEO): 1500 V Collector-Base Voltage (V_CBO): 1500 V Emitter-Base Voltage (V_EBO): 9 V Collector Current (I_C): 3 A Collector Power Dissipation (P_C): 50 W Junction Temperature (T_J): 150°C Electrical Characteristics (at T_A = 25°C unless otherwise specified) DC Current Gain (h_FE): 8 – 40 Collector-Emitter Saturation Voltage (V_CE(sat)): 3 V (max) Base-Emitter Voltage (V_BE): ~1.5 V (typ) Collector Cutoff Current (I_CBO): 1 mA (max) Transition Frequency (f_T): 4 MHz (typ) Package Information Package Type: TO-220 Mounting Type: Through-hole Pin Configuration: Pin 1: Base Pin 2: Collector Pin 3: Emitter Applications Switching power supplies High-voltage switching circuits CRT display circuits Motor control circuits General-purpose high-voltage amplification #CommonPartsLibrary #Transistors #Bipolar(BJT) #NPN

3.9 nH Unshielded Wirewound Inductor 700 mA 80mOhm Max 0603 (1608 Metric) ## Engineering Specification ## General Description The **0603CS-3N9XJRW** is a Coilcraft **0603CS series ceramic-core chip inductor** designed for RF, microwave, and high-frequency circuit applications. It provides low-value inductance in a compact surface-mount package and is suitable for impedance matching, RF filtering, tuning networks, resonant circuits, and general high-frequency signal-path designs. The component is commonly used in wireless modules, RF front-end circuits, communication equipment, test hardware, and compact printed circuit board assemblies requiring stable high-frequency inductive performance. ## Device Identification Manufacturer Part Number: **0603CS-3N9XJRW** Manufacturer: **Coilcraft** Product Series: **0603CS** Device Category: **Passive Electronic Component** Device Type: **Fixed Inductor** Inductor Type: **RF Chip Inductor** Construction Type: **Unshielded Wirewound Ceramic-Core Inductor** Mounting Type: **Surface Mount** ## Functional Description The device functions as a fixed-value RF inductor used to store magnetic energy and provide frequency-dependent impedance in electronic circuits. It is designed for high-frequency performance where low inductance value, compact size, and predictable RF behavior are required. The component can be used in matching networks, RF filters, oscillators, resonant circuits, and signal conditioning paths. ## Electrical Description The inductor has a nominal inductance of **three point nine nanohenries** with **five percent tolerance**. It is rated for **seven hundred milliamps** current and has a maximum DC resistance of **eighty milliohms**. The part provides a minimum self-resonant frequency of **six point nine gigahertz** and a minimum Q value suitable for RF circuit applications. It should be operated within the manufacturer’s specified current, temperature, and electrical limits. ## Mechanical Description The component is supplied in an **0603 surface-mount package**, also known as **1608 metric size**. It is designed for compact PCB layouts and automated pick-and-place assembly. The unshielded chip construction is suitable for high-frequency signal applications where board layout and nearby component placement are carefully controlled. ## Material and Construction Description The device uses a ceramic-core wirewound construction, which supports stable high-frequency inductance characteristics. The specified configuration includes RoHS-compliant matte tin over nickel over silver-platinum-glass frit termination, suitable for standard surface-mount soldering processes. ## Mounting and Assembly Description The **0603CS-3N9XJRW** is intended for surface-mount PCB assembly. Proper land pattern design, solder paste control, placement accuracy, and reflow soldering profile should follow Coilcraft recommendations. RF layout practices should be observed, including short trace lengths, controlled impedance routing, proper grounding, and minimized parasitic capacitance. ## Application Suitability The device is suitable for RF matching networks, wireless communication circuits, antenna tuning, filters, oscillators, resonant circuits, broadband RF designs, cellular modules, Wi-Fi and Bluetooth hardware, test equipment, and high-frequency embedded electronics. ## Design Considerations The design should account for inductance tolerance, Q factor, self-resonant frequency, DC resistance, current rating, operating temperature, layout parasitics, solder joint reliability, and interaction with nearby magnetic or conductive structures. For RF applications, the final performance should be validated in the actual PCB layout because trace geometry and component placement can affect impedance and resonance behavior. ## Hashtags #commonpartslibrary #inductor #rfinductor #chipinductor #coilcraft #coilcraftinductor #0603cs #0603component #smdinductor #surfacemount #wirewoundinductor #ceramiccoreinductor #passivecomponent #rfdesign #highfrequency #impedancematching #rffilter #wirelesshardware #communicationequipment #pcbdesign #hardwaredesign #electronicscomponents #electronicparts #componentlibrary #engineeringparts #electronicsengineering

5.6 nH Unshielded Wirewound Inductor 700 mA 75mOhm Max 0603 (1608 Metric) ## Engineering Specification ## General Description The **0603CS-5N6XJRW** is a Coilcraft **0603CS series ceramic-core chip inductor** designed for RF, microwave, and high-frequency electronic circuit applications. It provides low-value inductance in a compact surface-mount package and is suitable for impedance matching, RF filtering, tuning networks, resonant circuits, oscillators, and general high-frequency signal-path designs. The component is commonly used in wireless modules, communication equipment, RF front-end circuits, test hardware, and compact printed circuit board assemblies requiring stable inductive performance at high frequencies. ## Device Identification Manufacturer Part Number: **0603CS-5N6XJRW** Manufacturer: **Coilcraft** Product Series: **0603CS** Device Category: **Passive Electronic Component** Device Type: **Fixed Inductor** Inductor Type: **RF Chip Inductor** Construction Type: **Unshielded Wirewound Ceramic-Core Inductor** Mounting Type: **Surface Mount** ## Functional Description The device functions as a fixed-value RF inductor used to provide frequency-dependent impedance, energy storage, resonance control, and impedance transformation in electronic circuits. It is designed for high-frequency operation where compact size, low inductance value, and stable RF behavior are required. The component is suitable for use in matching networks, filters, resonant circuits, oscillators, and RF signal conditioning stages. ## Electrical Description The inductor has a nominal inductance of **five point six nanohenries** with **five percent tolerance**. It is rated for **seven hundred milliamps** current and has a maximum DC resistance of **seventy-five milliohms**. The device is intended for RF applications requiring low resistance, high self-resonant frequency, and predictable inductive behavior. It should be operated within the manufacturer’s specified electrical, thermal, and current limits. ## Mechanical Description The component is supplied in an **0603 surface-mount package**, also known as **1608 metric size**. Its compact chip construction supports dense PCB layouts and automated pick-and-place assembly. The unshielded construction is suitable for RF signal applications where board layout, component spacing, and parasitic effects are properly controlled. ## Material and Construction Description The device uses a ceramic-core wirewound construction to support stable high-frequency inductance characteristics. The termination system is designed for standard surface-mount soldering processes and is suitable for compact RF circuit board assemblies. ## Mounting and Assembly Description The **0603CS-5N6XJRW** is intended for surface-mount PCB assembly using standard reflow soldering processes. Proper land pattern design, solder paste control, placement accuracy, and reflow profile should follow Coilcraft recommendations. RF layout practices should be applied, including short trace lengths, controlled impedance routing, minimized parasitic capacitance, and appropriate spacing from nearby conductive or magnetic structures. ## Application Suitability The device is suitable for RF matching networks, antenna tuning, wireless communication circuits, RF filters, resonant circuits, oscillators, broadband RF designs, cellular modules, Wi-Fi and Bluetooth hardware, test equipment, and compact high-frequency embedded electronics. ## Design Considerations The design should account for inductance tolerance, Q factor, self-resonant frequency, DC resistance, current rating, operating temperature, PCB layout parasitics, solder joint reliability, and interaction with nearby components. For RF applications, final performance should be validated in the actual PCB layout because trace geometry, grounding, and component placement can affect impedance and resonance behavior. ## Hashtags #commonpartslibrary #inductor #rfinductor #chipinductor #coilcraft #coilcraftinductor #0603cs #0603component #smdinductor #surfacemount #wirewoundinductor #ceramiccoreinductor #passivecomponent #rfdesign #highfrequency #impedancematching #rffilter #antennatuning #wirelesshardware #communicationequipment #pcbdesign #hardwaredesign #electronicscomponents #electronicparts #componentlibrary #engineeringparts #electronicsengineering

The inductor is designed for high-frequency applications, offering the following key attributes: Inductance: 2.2 µH Current Rating: 1.2 A DC Resistance: Maximum 292 mΩ Package: 0603 (1608 Metric), with dimensions approximately 1.60 mm x 0.80 mm Operating Temperature Range: -40°C to 125°C Compliance & Standards: RoHS3 Compliant, REACH Unaffected, ECCN EAR99 Packaging Options: Available in Tape & Reel or Cut Tape formats #MCHK1608T2R2MKN #IND_MCHK1608_TAY #electroniccomponents #SEOfriendly

N-Channel 60 V 34.5A (Ta), 85A (Tc) 6.2W (Ta), 78W (Tc) Surface Mount 8-DFN (5x6) N-channel power MOSFET for high-frequency switching and synchronous rectification, rated for 60 V drain-to-source voltage and 85 A continuous drain current (at VGS = 10 V, TC = 25°C). Features a maximum RDS(on) of 2.9 mΩ at VGS = 10 V and 4.1 mΩ at VGS = 4.5 V, utilizes AlphaSGT™ trench technology, supports logic-level drive, and is housed in an 8-pin DFN 5×6 package. #N-ChannelMOSFET #PowerMOSFET #60V #85A #LowRDSon #LogicLevel #DFN5x6 #AlphaOmegaSemiconductor

100V 2.5A High-Frequency Half-Bridge Gate Driver #ultralibrarian