Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification

Automotive H-Bridge DC Motor Driver IC – Fully integrated 40 V H-bridge motor driver with integrated power MOSFETs for brushed DC motors and one winding of a bipolar stepper motor. Operates from a 4 V to 40 V supply, delivers up to 5 A continuous output current, and features a PWM control interface with integrated current-sense output for motor monitoring. Includes an internal charge pump for high-side gate drive, low-RDS(on) MOSFETs, current regulation, undervoltage lockout (UVLO), overcurrent protection (OCP), thermal shutdown, and shoot-through protection. Qualified to AEC-Q100 Grade 1, operates over a −40°C to +125°C junction temperature range, and is housed in an 18-pin QFN (3 × 4 mm) wettable-flank package. #MonolithicPowerSystems #MPS #MPQ6612AGLEAEC1P #MPQ6612A #MotorDriver #HBridge #BrushedDCMotor #StepperMotor #CurrentSense #PWM #PowerMOSFET #AECQ100 #Automotive #EmbeddedSystems

N-Channel 1200 V 95A (Tc) 427W Through Hole TO-247N Silicon Carbide (SiC) N-channel Power MOSFET for high-efficiency power switching applications, featuring a 1200 V drain-to-source voltage rating, 71 A continuous drain current, and 22 mΩ typical on-resistance (R_DS(on)). Housed in a TO-247N package, it is designed for high-speed switching and low switching losses. #SiCMOSFET #NChannelMOSFET #PowerMOSFET #1200V #71A #22mOhm #TO247N #PowerSwitching #RohmSemiconductor #SCT3022KLHRC11

N-Channel Power MOSFET – 40 V logic-level N-channel OptiMOS™ 6 power MOSFET optimized for high-efficiency synchronous buck converters, motor drives, battery-powered systems, and industrial power switching. Features a 40 V drain-to-source voltage (VDS), 100 A continuous drain current (TC = 25°C), 1.0 mΩ maximum RDS(on) at VGS = 10 V, and 1.4 mΩ maximum RDS(on) at VGS = 4.5 V. Includes logic-level gate drive, 67 nC typical gate charge, ±20 V gate-source voltage rating, 175°C maximum junction temperature, and 100% avalanche tested for enhanced ruggedness. Housed in an 8-pin PG-TDSON-8 (SuperSO8 5 × 6 mm) surface-mount package. #Infineon #BSC010N04LS6ATMA1 #BSC010N04LS6 #OptiMOS6 #PowerMOSFET #NChannelMOSFET #40V #LogicLevelMOSFET #LowRDSOn #SynchronousBuck #MotorDrive #PowerManagement #EmbeddedSystems

P-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC The SQ4435EY-T1_GE3 is an automotive-grade P-Channel enhancement-mode TrenchFET® power MOSFET from Vishay Siliconix. It is designed for efficient high-side load switching and power management applications, offering low on-resistance, fast switching performance, and excellent thermal reliability. Qualified to AEC-Q101, this MOSFET is suitable for demanding automotive and industrial environments. It is housed in a compact SO-8 surface-mount package, making it ideal for space-constrained designs. Key Features P-Channel enhancement-mode TrenchFET® MOSFET 30 V drain-to-source voltage (VDS) 15 A continuous drain current (TC = 25°C) Low RDS(on): 18 mΩ max @ VGS = -10 V 31 mΩ max @ VGS = -4.5 V AEC-Q101 qualified for automotive applications Operating junction temperature: -55°C to +175°C Low conduction losses for improved power efficiency Fast switching characteristics 100% Rg and UIS tested RoHS compliant and halogen-free Compact SO-8 surface-mount package Typical Applications Automotive high-side load switches Battery management systems (BMS) DC-DC converters Power distribution switches Motor control circuits Industrial power management Reverse battery protection #Vishay #SQ4435EY #PChannelMOSFET #TrenchFET #PowerMOSFET #Automotive #AECQ101 #HighSideSwitch #PowerManagement #DCDC #BatteryManagement #SO8 #IndustrialElectronics #LowRDSon #SurfaceMount

N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

P-Channel 60 V 30A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8 P-channel enhancement mode MOSFET designed for power switching applications. It features a −60 V drain-source voltage (VDS) rating, 33 mΩ maximum RDS(on) at VGS = −10 V, and supports continuous drain current up to −39 A, making it suitable for high-side load switching and power management circuits #P-Channel #MOSFET #PowerMOSFET #60V #33mOhm

Automotive N-Channel Power MOSFET – 30 V N-channel TrenchFET® Gen IV power MOSFET optimized for automotive power distribution, battery management systems (BMS), motor drives, DC-DC converters, load switching, and high-current embedded power applications. Features a 30 V drain-to-source voltage (VDS), 437 A continuous drain current (TC = 25°C), and ultra-low RDS(on) of 1.16 mΩ maximum at VGS = 10 V (1.66 mΩ maximum at VGS = 4.5 V) for exceptionally low conduction losses. Offers ±20 V gate-to-source voltage, 595 A pulsed drain current, 500 W maximum power dissipation, low gate charge, optimized Qgd/Qgs ratio for fast switching, and an integrated body diode for high-efficiency switching applications. Qualified to AEC-Q101, 100% Rg and UIS tested, and specified for operation over a −55°C to +175°C junction temperature range. Housed in a PowerPAK® SO-8L surface-mount package. #Vishay #SQJ128ELPT1GE3 #SQJ128ELP #NChannelMOSFET #TrenchFET #PowerMOSFET #DCDCConverter #BatteryManagement #MotorDrive #AutomotiveElectronics #PowerPAKSO8L #EmbeddedSystems

N-Channel 60 V 34.5A (Ta), 85A (Tc) 6.2W (Ta), 78W (Tc) Surface Mount 8-DFN (5x6) N-channel power MOSFET for high-frequency switching and synchronous rectification, rated for 60 V drain-to-source voltage and 85 A continuous drain current (at VGS = 10 V, TC = 25°C). Features a maximum RDS(on) of 2.9 mΩ at VGS = 10 V and 4.1 mΩ at VGS = 4.5 V, utilizes AlphaSGT™ trench technology, supports logic-level drive, and is housed in an 8-pin DFN 5×6 package. #N-ChannelMOSFET #PowerMOSFET #60V #85A #LowRDSon #LogicLevel #DFN5x6 #AlphaOmegaSemiconductor

P-Channel 60 V 30A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8 #BUK6Y33-60PX #Nexperia #TrenchMOS #PChannelMOSFET #PowerMOSFET #LFPAK56 #PowerSO8 #SurfaceMount #AECQ101 #AutomotiveGrade #PowerManagement #MotorControl #LoadSwitch #DiscreteSemiconductor #CommonPartsLibrary

N-Channel Power MOSFET – 30 V N-channel enhancement-mode MOSFET optimized for load switching, DC-DC converters, battery-powered devices, power management, motor control, and embedded switching applications. Features a 30 V drain-to-source voltage (VDS), 2 A continuous drain current, and 165 mΩ maximum RDS(on) at VGS = 4.5 V, with 1.8 V logic-level gate drive compatibility for low-voltage microcontroller interfaces. Offers 1.7 nC typical gate charge, 130 pF typical input capacitance, ultra-fast switching performance, and an integrated body diode for efficient power conversion. Rated for ±12 V gate-to-source voltage, 800 mW power dissipation, 150°C maximum junction temperature, and housed in a 3-pin MCPH3 (SC-70 / SOT-323) surface-mount package. This device is obsolete / not recommended for new designs. #onsemi #MCH3478TLH #MCH3478 #NChannelMOSFET #LogicLevelMOSFET #PowerMOSFET #LoadSwitch #DCDCConverter #PowerManagement #MotorDriver #SOT323 #EmbeddedSystems