SDRAM - Mobile LPDDR4X Memory IC 8Gbit Parallel 2.133 GHz 200-FBGA (10x15) The IM8G32L4JCBG-046I is an 8Gb (1GB) LPDDR4X SDRAM memory device designed for high-performance, low-power embedded applications. Organized as 256M × 32 bits, it delivers data rates up to 4266 MT/s, making it suitable for industrial computing, AI edge devices, networking equipment, automotive systems, and other memory-intensive applications. The LPDDR4X architecture reduces power consumption while maintaining high bandwidth and reliable operation across industrial temperature ranges. Key Features 8Gb (Gigabit) LPDDR4X SDRAM Memory organization: 256M × 32 bits High-speed operation up to 4266 MT/s Low-power LPDDR4X interface for reduced energy consumption 32-bit data bus width Industrial operating temperature range: –40°C to +95°C 200-ball FBGA package (10 mm × 15 mm) High bandwidth for demanding embedded applications Optimized for low-power and thermally constrained designs Suitable for industrial, automotive, networking, and edge AI systems #LPDDR4X #SDRAM #MemoryIC #EmbeddedSystems #IndustrialElectronics #EdgeComputing #AIoT #HighSpeedMemory #LowPowerDesign #AutomotiveElectronics #NetworkingHardware #FBGA #HardwareDesign #ElectronicsEngineering #PCBDesign #IntelligentMemory

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-TSOP II The AS4C32M16SB-7TCN is a single-data-rate synchronous dynamic random-access memory (SDR SDRAM) device manufactured by Alliance Memory. It is organized internally as a multi-bank array, allowing concurrent access operations across banks to improve effective memory bandwidth compared to simpler asynchronous DRAM architectures. The device is intended for general-purpose embedded memory applications where a synchronous, clock-driven memory interface is required, including embedded systems, industrial controllers, consumer electronics, networking equipment, and other designs that rely on a parallel SDRAM interface for working memory or buffering. As a drop-in style component within Alliance Memory's broader memory portfolio, this part is designed to be pin- and function-compatible with legacy SDR SDRAM devices originally offered by other manufacturers, allowing designers to source a continued-availability alternative for designs that depend on this memory architecture even as some original suppliers have discontinued production. This makes the device particularly useful in long-lifecycle industrial, embedded, and legacy system designs where a guaranteed supply of a specific memory interface and timing profile is critical to sustaining production over many years. The "B" designation in the part family indicates a specific die revision within the AS4C32M16S product line, reflecting a particular generation of internal silicon design while maintaining functional and pinout compatibility with related die revisions in the same footprint. The device communicates over a standard synchronous SDRAM command interface, using a clock-synchronized protocol for row and column addressing, data burst transfers, and bank management, and it supports the auto-refresh and self-refresh mechanisms typical of SDRAM devices to maintain stored data integrity without requiring constant external refresh management by the host controller. Mechanically, the device is housed in a thin small-outline package suited to space-constrained PCB layouts, and it is built for standard surface-mount assembly processes. The "-7TCN" suffix on this part number reflects a specific speed grade, package style, and temperature grade combination within the product family, with this particular variant intended for commercial temperature range operation. The device is supplied in tray packaging for surface-mount assembly and is compliant with RoHS material restrictions, supporting standard environmental and regulatory requirements for electronic components. Spec Sheet Identification Part Number: AS4C32M16SB-7TCN Device Family: AS4C32M16SB Manufacturer: Alliance Memory, Inc. Die Revision: B-die Functional Classification Device Type: Synchronous DRAM (SDR SDRAM) Memory Organization: Multi-bank array architecture Interface Type: Parallel, clock-synchronous command interface Refresh Capability: Supports auto-refresh and self-refresh modes Electrical Characteristics Supply Voltage: Standard 3.3V-class SDRAM supply rating Clock Frequency: Mid-range SDR SDRAM clock speed class Access Timing: Standard SDR SDRAM access time class for its speed grade Environmental & Qualification Temperature Grade: Commercial ("C" suffix designation) RoHS Compliance: Yes Product Positioning: Long-lifecycle, drop-in replacement memory device Package Package Type: Thin Small Outline Package, TSOP-II style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tray packaging #AS4C32M16SB #AllianceMemory #SDRAM #SDRSDRAM #MemoryIC #EmbeddedMemory #TSOP #SurfaceMount #LegacyMemory #DropInReplacement #DRAM #EmbeddedSystems #IndustrialElectronics #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #MemoryComponent #PCBDesign #CommonPartsLibrary #IntegratedCircuit #Memory #AS4C32

PSRAM (Pseudo SRAM) Memory IC 512Mbit HyperBus 166 MHz 36 ns 24-TFBGA (6x8) The IS66/67WVH64M8DALL/BLL are 512Mb Dual Die device containing two units of 256Mbit Pseudo Static Random Access Memory, organized as 64M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed especially for Mobile and Automotive applications Key Features 512-Mbit (64M × 8) HyperRAM™ PSRAM High-speed HyperBus interface Clock frequency up to 166 MHz Fast 36 ns access time Single-ended clock architecture with reduced pin count Operating voltage range: 2.7 V to 3.6 V Industrial temperature range: −40°C to +85°C Low-power volatile memory solution Surface-mount 24-TFBGA (6 mm × 8 mm) package Suitable for graphics, AI edge devices, networking, and embedded systems requiring large external memory capacity. #CommonPartsLibrary #IntegratedCircuit #HyperRAM #PSRAM #ISSI #MemoryIC #HyperBus #EmbeddedSystems #IndustrialElectronics #IoT #HighSpeedMemory #BGA #VolatileMemory #EdgeComputing #HMI #ElectronicsDesign

FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O, QPI, DTR 133 MHz 8-SOIC 128M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI Winbond W25Q128JV is a 128-Mbit (16 MB) serial NOR Flash memory device designed for code and data storage in embedded systems. It supports standard SPI, Dual SPI, Quad SPI (QSPI), and Dual/Quad Peripheral Interface (DPI/QPI) modes, enabling high-speed data transfer rates up to 133 MHz clock operation and up to 532 MB/s equivalent throughput in Quad I/O DTR mode. The device supports Execute-In-Place (XIP), allowing processors and microcontrollers to run code directly from external flash memory without copying it to RAM. Features include 4 KB sector erase, 32 KB and 64 KB block erase, page programming, hardware/software write protection, security registers, JEDEC identification, SFDP support, suspend/resume operations, and low-power standby modes. Suitable for microcontrollers, FPGA configuration storage, IoT devices, industrial controllers, networking equipment, consumer electronics, and embedded systems requiring reliable non-volatile memory. Search Keywords: W25Q128JV, Winbond flash memory, SPI NOR Flash, QSPI Flash, Quad SPI memory, Serial Flash memory, 128Mbit Flash, 16MB Flash memory, Execute In Place XIP, external MCU flash, ESP32 flash memory, FPGA configuration memory, NOR flash storage, W25Q128, Dual SPI Flash, Quad I/O Flash, embedded nonvolatile memory, serial flash IC Hashtags: #W25Q128JV #Winbond #NORFlash #SPIMemory #QSPI #SerialFlash #FlashMemory #EmbeddedSystems #Microcontroller #ESP32 #FPGA #NonVolatileMemory #XIP #IoT #ElectronicsDesign #MemoryIC #FirmwareStorage #QuadSPI #EmbeddedHardware #ElectronicComponents

The W25Q02JVSFIM from Winbond Electronics is a 2G-bit (256M x 8) Serial NOR Flash Memory device designed for high-density non-volatile data storage applications. It supports high-speed SPI, Dual/Quad SPI, QPI, and DTR interfaces, providing fast data transfer and efficient memory access for embedded systems. The device operates from a 2.7V to 3.6V supply voltage and is available in a 16-pin SOIC surface-mount package. It is suitable for applications such as firmware storage, boot code memory, industrial controllers, IoT devices, automotive electronics, and embedded systems requiring large-capacity reliable flash memory. Key Features Memory Density: 2G-bit Serial NOR Flash (256M x 8) Flash Technology: Single-Level Cell (SLC) NOR Flash Interface Support: Standard SPI, Dual SPI, Quad SPI, QPI, and DTR modes High-Speed Clock Frequency: Up to 133 MHz operation Fast Access Time: Approximately 7.5 ns Supply Voltage Range: 2.7V to 3.6V Non-Volatile Data Storage: Retains stored data without power Memory Organization: 256M x 8-bit architecture Package Type: 16-pin SOIC (7.50 mm width) surface-mount package Operating Temperature Range: -40°C to +85°C Page Program Time: Approximately 3.5 ms Applications: Embedded firmware storage, BIOS/boot memory, industrial equipment, IoT devices, and consumer electronics Hashtags #W25Q02JVSFIM #Winbond #SerialFlashMemory #NORFlash #SPIFlash #QuadSPI #QPI #DTR #EmbeddedSystems #NonVolatileMemory #FlashMemory #FirmwareStorage #IoT #IndustrialElectronics #Semiconductor #MemoryIC

16 GB eMMC Flash Memory IC – Embedded non-volatile NAND flash storage with an eMMC 5.1 interface, designed for embedded computing and digital systems requiring integrated mass storage. The Kingston EMMC16G-MW28-01E10 provides 16 GB NAND capacity, 200 MHz clock operation, 2.7–3.6 V supply, and an 8-bit memory interface. It uses TLC NAND flash technology in a 153-FBGA package (11.5 × 13 mm) and operates from −25°C to +85°C. #Kingston #EMMC16GMW2801E10 #eMMC #FlashMemory #NANDFlash #EmbeddedStorage #eMMC51 #MemoryIC #EmbeddedSystems #PCBComponents

NFC/RFID EEPROM Memory IC – A contactless memory device with 64-Kbit EEPROM storage, supporting 13.56 MHz NFC communication and I²C interface for wired access. It operates from 1.8 V to 5.5 V supply voltage and is available in an 8-pin TSSOP package. #NFC #RFID #EEPROM #MemoryIC #ST25DV64K

FLASH - NAND Memory IC 4Gbit Parallel 48-TSOP I #commonpartslibrary #memoryic #flash