N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification

The FS8205A is a dual N-channel enhancement-mode power MOSFET designed primarily for lithium-ion and lithium-polymer battery protection applications. Manufactured by several semiconductor vendors including Fortune Semiconductor, this device integrates two low on-resistance MOSFETs within a compact surface-mount package, enabling efficient bidirectional current control for battery charging and discharging systems. The device is commonly paired with single-cell battery protection controller ICs such as the DW01A to provide overcharge, overdischarge, overcurrent, and short-circuit protection in portable electronic products. Its low drain-to-source resistance minimizes conduction losses and improves overall battery efficiency while maintaining compact PCB layout requirements. The FS8205A is widely used in battery management systems, portable consumer electronics, rechargeable battery packs, USB-powered devices, IoT hardware, and embedded power management circuits requiring reliable load switching and battery protection functionality. Engineering Specification Device Type Dual N-channel power MOSFET Transistor Technology Enhancement-mode MOSFET architecture Channel Configuration Dual independent N-channel MOSFETs Switching Characteristics Low on-resistance for efficient power switching Gate Characteristics Logic-level gate drive compatibility Current Handling Optimized for battery charge and discharge current control Power Efficiency Low conduction loss for improved battery runtime Protection System Compatibility Designed for lithium battery protection controller integration Thermal Characteristics Compact thermal-efficient surface-mount structure Package Type SOP-8 surface-mount package Mounting Style Surface mount technology Reliability Features Stable switching performance and robust load handling capability Applications Lithium-ion battery protection Battery management systems Portable electronics Rechargeable battery packs USB-powered devices Power path switching Embedded systems Consumer electronics IoT hardware Load switching circuits Manufacturer Commonly manufactured by Fortune Semiconductor and compatible vendors #commonpartslibrary #mosfet #dualmosfet #nchannelmosfet #batteryprotection #batterymanagement #powermanagement #powerelectronics #embeddedhardware #consumerelectronics #surfaceountcomponents #electronicsdesign #lithiumbattery #loadswitch #portableelectronics

N-Channel Power MOSFET – 40 V logic-level N-channel OptiMOS™ 6 power MOSFET optimized for high-efficiency synchronous buck converters, motor drives, battery-powered systems, and industrial power switching. Features a 40 V drain-to-source voltage (VDS), 100 A continuous drain current (TC = 25°C), 1.0 mΩ maximum RDS(on) at VGS = 10 V, and 1.4 mΩ maximum RDS(on) at VGS = 4.5 V. Includes logic-level gate drive, 67 nC typical gate charge, ±20 V gate-source voltage rating, 175°C maximum junction temperature, and 100% avalanche tested for enhanced ruggedness. Housed in an 8-pin PG-TDSON-8 (SuperSO8 5 × 6 mm) surface-mount package. #Infineon #BSC010N04LS6ATMA1 #BSC010N04LS6 #OptiMOS6 #PowerMOSFET #NChannelMOSFET #40V #LogicLevelMOSFET #LowRDSOn #SynchronousBuck #MotorDrive #PowerManagement #EmbeddedSystems

Automotive N-Channel Power MOSFET – 30 V N-channel TrenchFET® Gen IV power MOSFET optimized for automotive power distribution, battery management systems (BMS), motor drives, DC-DC converters, load switching, and high-current embedded power applications. Features a 30 V drain-to-source voltage (VDS), 437 A continuous drain current (TC = 25°C), and ultra-low RDS(on) of 1.16 mΩ maximum at VGS = 10 V (1.66 mΩ maximum at VGS = 4.5 V) for exceptionally low conduction losses. Offers ±20 V gate-to-source voltage, 595 A pulsed drain current, 500 W maximum power dissipation, low gate charge, optimized Qgd/Qgs ratio for fast switching, and an integrated body diode for high-efficiency switching applications. Qualified to AEC-Q101, 100% Rg and UIS tested, and specified for operation over a −55°C to +175°C junction temperature range. Housed in a PowerPAK® SO-8L surface-mount package. #Vishay #SQJ128ELPT1GE3 #SQJ128ELP #NChannelMOSFET #TrenchFET #PowerMOSFET #DCDCConverter #BatteryManagement #MotorDrive #AutomotiveElectronics #PowerPAKSO8L #EmbeddedSystems

N-Channel 60 V 34.5A (Ta), 85A (Tc) 6.2W (Ta), 78W (Tc) Surface Mount 8-DFN (5x6) N-channel power MOSFET for high-frequency switching and synchronous rectification, rated for 60 V drain-to-source voltage and 85 A continuous drain current (at VGS = 10 V, TC = 25°C). Features a maximum RDS(on) of 2.9 mΩ at VGS = 10 V and 4.1 mΩ at VGS = 4.5 V, utilizes AlphaSGT™ trench technology, supports logic-level drive, and is housed in an 8-pin DFN 5×6 package. #N-ChannelMOSFET #PowerMOSFET #60V #85A #LowRDSon #LogicLevel #DFN5x6 #AlphaOmegaSemiconductor

MOSFET N-CH 20V 3.6A SOT-23 The IRLML2502 is a small-signal N-channel enhancement mode power MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used as a load switch or power control transistor in compact electronic systems such as battery-powered devices, LED drivers, and DC-DC converters. It features a low on-resistance (RDS(on)), which allows it to switch higher currents with minimal power loss and heat generation. The device is optimized for logic-level gate drive, meaning it can be driven directly from microcontrollers (like 3.3 V or 5 V systems). It is packaged in a compact SOT-23 (Micro3) surface-mount package, making it suitable for space-constrained PCB designs. Key Features N-channel enhancement mode MOSFET Drain-source voltage (VDS) up to 20 V Continuous drain current up to ~4.2 A (at 25°C) Very low RDS(on) ≈ 45 mΩ @ VGS = 4.5 V Logic-level gate drive capability (works with 2.5–4.5 V signals) Fast switching performance Compact SOT-23 (Micro3) surface-mount package Low gate charge for efficient switching Suitable for battery-powered and low-voltage applications RoHS compliant, lead-free design #IRLML2502 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LogicLevelMOSFET #PowerSwitch #ElectronicComponents #EmbeddedSystems #PCBDesign

MOSFET N-CH 20V 6.3A SOT-23 The IRLML6244TRPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies (originally International Rectifier HEXFET series). It is designed for low-voltage power switching applications such as load switching, DC-DC converters, and LED control. It comes in a compact SOT-23 (Micro3™) surface-mount package, making it suitable for space-constrained PCB designs while still handling relatively high current for its size. Key Features Drain-Source Voltage (VDS): 20 V Continuous Drain Current: up to ~6.3 A (at 25°C) Very low RDS(on): ~21 mΩ @ VGS = 4.5 V ~27 mΩ @ VGS = 2.5 V Low gate threshold voltage (~0.5–1.1 V typical range) (note: not a switching guarantee) Gate-to-source voltage rating: ±12 V Low power loss due to low on-resistance High efficiency switching for low-voltage systems Power dissipation: ~1.3 W (thermal limited in SOT-23 package) Fast switching performance (low gate charge ~8.9 nC) Operating temperature range: −55°C to +150°C RoHS compliant (lead-free, halogen-free) Typical Applications Low-side load switching (MCUs, GPIO control) LED strip / RGB LED drivers Battery-powered systems DC-DC converter switching Small motor or relay driving General-purpose power management in compact electronics Important Design Note Even though it has a low VGS(th), this MOSFET is not selected based on threshold voltage. What matters is the RDS(on) at your gate drive voltage (2.5 V / 3.3 V / 5 V) to ensure it fully turns on with minimal heating. #CommonPartsLibrary #Transistor #FET #IRLML6244 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #Infineon #HEXFET #LEDDriver #LowSideSwitch #ElectronicsComponents

200V 30A 3.4V 51W 82mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS N-channel power MOSFET designed for high-speed switching and power conversion applications. It features a 200 V drain-to-source voltage (VDS), 30 A continuous drain current (ID), 82 mΩ typical RDS(on) at VGS = 10 V, and is housed in a TO-252 (DPAK) package. The device also specifies a 6.5 nC typical total gate charge, 380 pF typical input capacitance, and supports a maximum junction temperature of 150°C. #NChannelMOSFET #PowerMOSFET #200V #30A #TO252 #DPAK #FastSwitching #PowerManagement #DiscreteSemiconductor #XNRUSEMI