60V, 0.2A, 1ohm Rds, self-Protected High Side Driver with Temperature and Current Limit, SOT−223 MOSFET ESD Overcurrent SOT?223*

Self-Protected Low Side Driver with Temperature and Current Limit, SOT−223 MOSFET ESD Overcurrent SOT?223*

Self-Protected Low Side Driver with Temperature and Current Limit, SOT−223 MOSFET ESD Overcurrent SOT?223*

LED Driver buck 1MHz; 1.2A; PWM/DC; linear dimming; internal MOSFET transistor; high-brightness; 6-30V; -40+85 deg.C; SMD; SOT89-5 #commonpartslibrary #integratedcircuit #powermanagement #leddriver

Buck Switching Regulator IC Positive Fixed 3.3V 1 Output 2A SOT-23-6 Thin, TSOT-23-6 The AP63200/AP63201/AP63203/AP63205 is a 2A, synchronous buck converter with a wide input voltage range of 3.8V to 32V and fully integrates a 125mΩ high-side power MOSFET and a 68mΩ low-side power MOSFET to provide high-efficiency step-down DC/DC conversion. The AP63200/AP63201/AP63203/AP63205 device is easily used by minimizing the external component count due to its adoption of peak current mode control along with its integrated compensation network. The AP63200/AP63201/AP63203/AP63205 has optimized designs for Electromagnetic Interference (EMI) reduction. The converter features Frequency Spread Spectrum (FSS) with a switching frequency jitter of ±6%, which reduces EMI by not allowing emitted energy to stay in any one frequency for a significant period of time. It also has a proprietary gate driver scheme to resist switching node ringing without sacrificing MOSFET turn-on and turn-off times, which further erases highfrequency radiated EMI noise caused by MOSFET switching. The device is available in a low-profile, TSOT26 package. • VIN 3.8V to 32V • 2A Continuous Output Current • 0.8V ±1% Reference Voltage • 22µA Ultralow Quiescent Current • Switching Frequency o 500kHz: AP63200 and AP63201 o 1.1MHz: AP63203 and AP63205 • Pulse Width Modulation (PWM) Regardless of Output Load o AP63201 • Supports Pulse Frequency Modulation (PFM) o AP63200, AP63203, and AP63205 o Up to 80% Efficiency at 1mA Light Load o Up to 88% Efficiency at 5mA Light Load • Fixed Output Voltage o 3.3V: AP63203 o 5.0V: AP63205 • Proprietary Gate Driver Design for Best EMI Reduction • Frequency Spread Spectrum (FSS) to Reduce EMI • Precision Enable Threshold to Adjust UVLO • Protection Circuitry o Overvoltage Protection o Cycle-by-Cycle Peak Current Limit o Thermal Shutdown • 12V and 24V distributed power bus supplies • Flat screen TV sets and monitors • Power tools and laser printers • White goods and small home appliances • FPGA, DSP, and ASIC supplies • Home audios • Network systems • Set top boxes • Gaming consoles • Consumer electronics #commonpartslibrary #integratedcircuit #AP63203WU7 #BuckConverter #DCDCConverter #PowerManagement #VoltageRegulator #SynchronousBuck #EmbeddedSystems #IndustrialElectronics #PowerSupply #DiodesInc #3V3Power #ElectronicsDesign

3.8V to 32V Input, 2A Low Quiescent Current Synchronous Buck Converter with Enhanced EMI Suppression The AP63200/AP63201/AP63203/AP63205 is a 2A, synchronous buck converter with a wide input voltage range of 3.8V to 32V and fully integrates a 125mΩ high-side power MOSFET and a 68mΩ low-side power MOSFET to provide high-efficiency step-down DC/DC conversion. The AP63200/AP63201/AP63203/AP63205 device is easily used by minimizing the external component count due to its adoption of peak current mode control along with its integrated compensation network. The AP63200/AP63201/AP63203/AP63205 has optimized designs for Electromagnetic Interference (EMI) reduction. The converter features Frequency Spread Spectrum (FSS) with a switching frequency jitter of ±6%, which reduces EMI by not allowing emitted energy to stay in any one frequency for a significant period of time. It also has a proprietary gate driver scheme to resist switching node ringing without sacrificing MOSFET turn-on and turn-off times, which further erases highfrequency radiated EMI noise caused by MOSFET switching. The device is available in a low-profile, TSOT26 package • VIN 3.8V to 32V • 2A Continuous Output Current • 0.8V ±1% Reference Voltage • 22µA Ultralow Quiescent Current • Switching Frequency o 500kHz: AP63200 and AP63201 o 1.1MHz: AP63203 and AP63205 • Pulse Width Modulation (PWM) Regardless of Output Load o AP63201 • Supports Pulse Frequency Modulation (PFM) o AP63200, AP63203, and AP63205 o Up to 80% Efficiency at 1mA Light Load o Up to 88% Efficiency at 5mA Light Load • Fixed Output Voltage o 3.3V: AP63203 o 5.0V: AP63205 • Proprietary Gate Driver Design for Best EMI Reduction • Frequency Spread Spectrum (FSS) to Reduce EMI • Precision Enable Threshold to Adjust UVLO • Protection Circuitry o Overvoltage Protection o Cycle-by-Cycle Peak Current Limit o Thermal Shutdown #CommonPartsLibrary #IntegratedCircuit #PowerManagement #Switching-regulator

3.8V to 32V Input, 2A Low Quiescent Current Synchronous Buck Converter with Enhanced EMI Suppression The AP63200/AP63201/AP63203/AP63205 is a 2A, synchronous buck converter with a wide input voltage range of 3.8V to 32V and fully integrates a 125mΩ high-side power MOSFET and a 68mΩ low-side power MOSFET to provide high-efficiency step-down DC/DC conversion. The AP63200/AP63201/AP63203/AP63205 device is easily used by minimizing the external component count due to its adoption of peak current mode control along with its integrated compensation network. The AP63200/AP63201/AP63203/AP63205 has optimized designs for Electromagnetic Interference (EMI) reduction. The converter features Frequency Spread Spectrum (FSS) with a switching frequency jitter of ±6%, which reduces EMI by not allowing emitted energy to stay in any one frequency for a significant period of time. It also has a proprietary gate driver scheme to resist switching node ringing without sacrificing MOSFET turn-on and turn-off times, which further erases highfrequency radiated EMI noise caused by MOSFET switching. The device is available in a low-profile, TSOT26 package • VIN 3.8V to 32V • 2A Continuous Output Current • 0.8V ±1% Reference Voltage • 22µA Ultralow Quiescent Current • Switching Frequency o 500kHz: AP63200 and AP63201 o 1.1MHz: AP63203 and AP63205 • Pulse Width Modulation (PWM) Regardless of Output Load o AP63201 • Supports Pulse Frequency Modulation (PFM) o AP63200, AP63203, and AP63205 o Up to 80% Efficiency at 1mA Light Load o Up to 88% Efficiency at 5mA Light Load • Fixed Output Voltage o 3.3V: AP63203 o 5.0V: AP63205 • Proprietary Gate Driver Design for Best EMI Reduction • Frequency Spread Spectrum (FSS) to Reduce EMI • Precision Enable Threshold to Adjust UVLO • Protection Circuitry o Overvoltage Protection o Cycle-by-Cycle Peak Current Limit o Thermal Shutdown #CommonPartsLibrary #IntegratedCircuit #PowerManagement

A Dual P-Channel Enhanced MOSFET. Used as a high-current row power switch and multiplexing driver for LED matrix displays. (8-pin Package)

Charger IC Multi-Chemistry 36-VQFN (5x6) The BQ25750RRVR is a highly integrated switch-mode battery charge controller and power-path management device designed for single-cell to multi-cell lithium-ion and lithium-polymer battery-powered systems. The device supports bidirectional power conversion, enabling both battery charging and system power delivery through USB Type-C and other DC power sources. It integrates high-efficiency buck-boost charging architecture to maintain optimal charging performance across a wide input voltage range. The device is intended for portable electronics, industrial handheld equipment, USB Power Delivery applications, embedded systems, and battery-powered computing platforms requiring advanced power management and flexible charging capability. Integrated power-path management allows simultaneous system operation and battery charging while maintaining battery protection and system stability. The BQ25750RRVR supports programmable charging parameters through an I2C interface, including charge voltage, charge current, input current limit, and system power regulation. The device includes comprehensive protection functions such as overvoltage protection, overcurrent protection, thermal regulation, battery temperature monitoring, and fault reporting. High switching frequency operation enables reduced external component size and compact PCB implementation. Features Integrated synchronous buck-boost battery charger Supports USB Power Delivery and wide DC input sources Bidirectional power conversion capability I2C programmable charging and system parameters Integrated power-path management High-efficiency charging operation Supports multi-cell lithium-ion and lithium-polymer batteries Programmable input current and charge current limits Dynamic power management and system voltage regulation Integrated ADC monitoring for voltage, current, and temperature Battery supplement mode during adapter removal OTG boost mode support Thermal regulation and thermal shutdown protection Input overvoltage and overcurrent protection Battery overvoltage protection Safety timer and watchdog timer support NTC thermistor interface for battery temperature monitoring Interrupt and fault status reporting Compact WQFN package suitable for space-constrained designs Electrical Characteristics Wide input operating voltage range Programmable battery charge voltage High charge current capability Integrated low RDS(on) MOSFET drivers High switching frequency operation High conversion efficiency across operating range Low standby and shutdown current consumption Accurate input and charge current regulation Integrated analog-to-digital converter telemetry Interface and Control I2C serial communication interface Programmable charging profiles Configurable protection thresholds Status and interrupt reporting ADC telemetry reporting Enable and control pins for system integration Protection Features Input overvoltage protection Input overcurrent protection Battery overvoltage protection Thermal shutdown protection Thermal regulation control Short-circuit protection Watchdog timer protection Safety charging timer Battery temperature qualification support Package Information Package Type: WQFN Package Suffix: RRV Compact thermally enhanced package Surface-mount device Suitable for automated PCB assembly processes Applications USB Type-C charging systems Portable computers and tablets Industrial handheld devices Power banks and battery packs Embedded battery-powered systems Portable instrumentation Consumer electronics Smart battery charging platforms #commonpartslibrary #integratedcircuit #powermanagement #batterycharger

Charger IC Multi-Chemistry 32-QFN (4x4) The BQ25730RSNR is a highly integrated synchronous buck battery charger and system power management IC developed by Texas Instruments for applications requiring efficient charging of multi-cell lithium-ion and lithium-polymer batteries. The device is optimized for USB Type-C, USB Power Delivery, industrial, and portable embedded systems where high charging efficiency, flexible power management, and compact implementation are required. The charger integrates high-side and low-side MOSFET gate drivers along with advanced power path management features, enabling efficient battery charging while simultaneously powering the system load. The architecture supports NVDC power path operation, allowing stable system voltage regulation even when the battery is deeply discharged or absent. The device supports a wide operating input voltage range and programmable charging parameters suitable for various battery chemistries and capacities. Integrated input current optimization and dynamic power management help maximize available adapter power while preventing overload conditions. The BQ25730RSNR communicates with the host processor through an I²C interface, enabling software configuration, telemetry monitoring, and fault management. Internal ADC functionality provides real-time monitoring of charging voltage, current, temperature, and system operating conditions. Its high integration level reduces external component count and PCB area, making it suitable for compact industrial and portable power applications. Electrical Characteristics Wide input voltage operating range compatible with USB PD adapters and industrial power sources. Supports multi-cell lithium-ion and lithium-polymer battery charging configurations. High-efficiency synchronous buck charging architecture. Programmable charge current and charge voltage through digital control interface. Integrated ADC for system telemetry and power monitoring. Dynamic power management optimizes adapter utilization and system stability. Low standby current operation for battery-powered systems. Charging Features Constant current and constant voltage charging modes. Programmable input current limiting for USB and adapter compliance. Battery preconditioning and charge termination functionality. Support for fast charging operation with thermal regulation. Power path management enables simultaneous battery charging and system operation. Automatic recharge and battery maintenance functionality. Protection Features Input overvoltage protection. Battery overvoltage and overcurrent protection. Thermal regulation and thermal shutdown protection. Short-circuit and fault condition protection. Battery temperature monitoring support using external NTC thermistors. Reverse current protection and adapter isolation. Interface and Control I²C serial communication interface for configuration and monitoring. Programmable charging profiles and operating parameters. Interrupt and status reporting capabilities. Integrated telemetry reporting for voltage, current, and temperature measurements. Autonomous operation capability with minimal host intervention. Package Information Package type is WQFN. Compact thermally enhanced surface-mount package. Optimized for automated PCB assembly and high-density layouts. Applications USB Type-C and USB Power Delivery systems. Industrial portable electronics. Embedded computing platforms. Portable medical and instrumentation equipment. Battery-powered industrial controllers. Handheld terminals and data acquisition systems. Portable consumer and commercial electronics. #commonpartslibrary #integratedcircuit #powermanagement #batterycharger

MOSFET 50V 0.22A SOT-23-3 These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.22 A, 50 V ♦ RDS(on) = 3.5 @ VGS = 10 V ♦ RDS(on) = 6.0 @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free and Halogen Free #CommonPartsLibrary #Transistor

DC-DC Controllers LM5176PWPR HTSSOP-28_L9.7-W4.4-P0.65-LS6.4-BL-EP LCSC Part Number: C442493 JLCPCB Part Class: Extended Part Manufactured by TI(德州仪器) Texas Instruments LM5176 synchronous 4-switch buck-boost DC/DC controller, regulates output voltage above, below or equal to input voltage, wide 4.2V to 55V input voltage range with 60V absolute maximum, adjustable 0.8V to 55V output voltage, single-inductor buck-boost architecture, current-mode control, high-efficiency buck-boost transition, adjustable switching frequency with optional synchronization and dithering, integrated 2A MOSFET gate drivers, cycle-by-cycle current limit, optional hiccup protection, input UVLO, soft-start, power-good output, output overvoltage protection, available in HTSSOP-28 and QFN-28 packages. Search Keywords: LM5176, Texas Instruments LM5176, TI LM5176, LM5176 buck boost controller, LM5176 4 switch buck boost, LM5176 synchronous buck boost controller, 55V buck boost controller, 4.2V to 55V DC DC controller, adjustable buck boost controller, single inductor buck boost controller, LM5176 HTSSOP-28, LM5176 QFN-28, LM5176 power supply controller, LM5176 USB power delivery, LM5176 battery powered systems, LM5176 LED lighting, LM5176 datasheet Hashtags: #LM5176 #TexasInstrumentsLM5176 #TIBuckBoostController #BuckBoostController #SynchronousBuckBoost #4SwitchBuckBoost #DCDCController #55VController #SingleInductorBuckBoost #CurrentModeController #MOSFETGateDriver #2AGateDriver #AdjustableFrequencyController #UVLOController #PowerGoodController #OutputOVP #HTSSOP28 #QFN28

N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier

The YFW AO3400 is a 30V N-Channel Enhancement MOSFET designed for low-voltage and high-speed switching applications. It uses advanced trench MOSFET technology to achieve low on-resistance (RDS(on)), fast switching performance, and efficient power handling in a compact SOT-23 package. It is commonly used in load switching, DC-DC converters, battery-powered devices, motor control, LED driving, and PWM switching circuits. Key Features N-Channel Enhancement Mode MOSFET Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.8A Low RDS(on): < 28mΩ @ VGS = 10V < 33mΩ @ VGS = 4.5V < 52mΩ @ VGS = 2.5V Logic-Level Gate Drive Compatible Fast Switching Speed Low Gate Charge Compact SOT-23 Package Suitable for PWM and Load Switch Applications RoHS / Pb-Free Compatible Typical Applications Power switching DC-DC converters Battery management systems Motor and fan control LED drivers Portable electronics Microcontroller-based switching circuits #CommonPartsLibrary #Transistor #FET #Mosfet

LED Driver IC 1 Output DC DC Controller SEPIC, Step-Down (Buck), Step-Up (Boost) Analog, PWM Dimming 8-SO-EP # AL8866QSP-13 Engineering Specifications **General Description** The AL8866QSP-13 is an automotive-qualified, multi-topology DC-switching LED controller manufactured by Diodes Incorporated. It is designed to control an external power MOSFET for high-power automotive LED lighting systems. The device supports buck, boost, buck-boost and single-ended primary-inductance converter configurations. Its wide input-voltage range makes it suitable for automotive power systems and various high-voltage LED applications. The controller uses fixed-frequency peak current-mode regulation with spread-spectrum frequency modulation to reduce electromagnetic interference. It supports both analog and pulse-width-modulation dimming through the DIM input. An integrated programmable soft-start function gradually increases the inductor and switching currents during startup to reduce output-voltage and current stress. The open-drain fault output provides system-level fault reporting for abnormal operating conditions. **Engineering Specifications** **Manufacturer:** Diodes Incorporated **Manufacturer Part Number:** AL8866QSP-13 **Component Type:** Automotive LED driver controller **Converter Topologies:** Buck, boost, buck-boost and SEPIC **Control Architecture:** Fixed-frequency peak current-mode control **External Switching Device:** External power MOSFET **Minimum Input Voltage:** Four point seven volts **Maximum Input Voltage:** Eighty-five volts **Maximum Output Voltage:** Eighty-five volts **Switching Frequency:** Four hundred kilohertz **Frequency Modulation:** Spread-spectrum modulation for reduced electromagnetic interference **LED Current Control:** External current-sense resistor and external MOSFET configuration **Feedback Voltage:** Two hundred millivolts **Typical Quiescent Current:** One point eight milliamperes **Typical Efficiency:** Up to approximately ninety-three percent, depending on the application circuit and external components **Dimming Methods:** Analog dimming and pulse-width-modulation dimming **Analog Dimming Range:** One percent to one hundred percent **Analog Dimming Dynamic Range:** Greater than one hundred to one **Pulse-Width-Modulation Dimming Ratio:** One hundred to one at a two-hundred-hertz dimming frequency **Pulse-Width-Modulation Frequency Range:** Approximately one hundred hertz to one kilohertz **Full-Brightness Current Accuracy:** Approximately plus or minus three percent **Low-Level Dimming Current Accuracy:** Approximately plus or minus twelve percent at twenty-percent dimming **Soft-Start Function:** Externally programmable **Fault Output:** Active-low open-drain fault indicator **Protection Features:** Output overvoltage protection, LED open-circuit protection, output undervoltage protection, LED short-circuit protection, cycle-by-cycle overcurrent limitation, current-sense resistor short-circuit protection, inductor and diode short-circuit detection, diode open-circuit protection and thermal shutdown **Automotive Qualification:** AEC-Q100 Grade One qualified **Automotive Documentation:** PPAP capable **Manufacturing Standard:** Manufactured in IATF-certified automotive facilities **Operating Temperature Range:** Minus forty degrees Celsius to positive one hundred twenty-five degrees Celsius **Package Type:** Thermally enhanced SO-8 exposed-pad package **Pin Count:** Eight leads with exposed thermal ground pad **Mounting Style:** Surface mount **Packing Method:** Thirteen-inch tape and reel **Standard Packing Quantity:** Two thousand five hundred components per reel **Moisture Sensitivity:** Level One **Terminal Finish:** Matte-tin-plated leads **Environmental Compliance:** Lead-free, RoHS compliant, halogen-free and antimony-free **Typical Applications** Automotive high-beam and low-beam lighting Automotive daytime running lights Automotive fog lights Automotive turn-signal lights Automotive position lights Automotive brake and stop lights High-power exterior LED lighting Multi-topology automotive LED driver modules #AL8866QSP13 #AL8866Q #DiodesIncorporated #LEDDriver #AutomotiveLED #AutomotiveElectronics #BuckConverter #BoostConverter #BuckBoostConverter #SEPICConverter #PowerElectronics #LEDLighting #ElectronicComponents #EngineeringSpecifications

Bipolar Motor Driver NMOS On/Off, PWM 44-HTSSOP The DRV8262QDDWRQ1 is an automotive-qualified, high-power H-bridge motor driver from Texas Instruments designed for 24 V and 48 V automotive systems. It integrates two H-bridges capable of driving one or two brushed DC motors, a bipolar stepper motor, or thermoelectric coolers (TECs). The device features integrated high-side current sensing, programmable current regulation, and comprehensive protection functions, eliminating the need for external current-sense resistors while reducing PCB area and system cost. It supports wide supply voltages from 4.5 V to 60 V, making it suitable for demanding automotive body electronics and industrial motor control applications. Key Features Automotive AEC-Q100 Grade 1 qualified (-40°C to +125°C) Wide 4.5 V to 60 V operating supply voltage Dual H-bridge or single high-current H-bridge operation Drives: One or two brushed DC motors One bipolar stepper motor One or two thermoelectric coolers (TECs) Up to 8 A peak (dual H-bridge mode) Up to 16 A peak (single H-bridge mode) Low MOSFET on-resistance: 100 mΩ (dual H-bridge) 50 mΩ (single H-bridge) Integrated high-side current sensing with ±4% accuracy Programmable current regulation and current limiting Supports 1.8 V, 3.3 V, and 5 V logic interfaces Configurable PWM control modes (PH/EN or IN/IN) Ultra-low 3 µA sleep current Integrated protection features: Undervoltage Lockout (UVLO) Charge Pump Undervoltage (CPUV) Overcurrent Protection (OCP) Thermal Shutdown (OTSD) Fault output (nFAULT) Functional safety-capable with supporting documentation for automotive system design. #DRV8262QDDWRQ1 #MotorDriver #HBridge #AutomotiveElectronics #BrushedDCMotor #StepperMotor #CurrentSense #AECQ100 #TexasInstruments #EmbeddedSystems #PowerManagement #PCBDesign

The BP2866C, manufactured by 晶丰明源半导体, is a high precision buck constant current LED driver designed for universal input offline LED lighting applications. Operating in critical conduction mode, this component is suitable for 85Vac~265Vac input and integrates a 500V power MOSFET. It features patented demagnetization detection technology and high-voltage JFET power supply technology, eliminating the need for a VCC capacitor and starting resistors, thereby minimizing system cost and size. The BP2866C offers precise output current and excellent line regulation through a patent-pending current control method. It includes robust protection functions such as LED short circuit protection, VCC under voltage protection, and thermal regulation. Available in a SOP7 package, it ensures a +5% LED output current accuracy and is ideal for applications like LED candle lights and bulbs.

6 to 50 V, Triple half-bridge gate driver with programmable currents and SPI configuration Motor Driver NMOS SPI 48-VFQFPN (6x6) STDRIVE102BP is a highly integrated triple half-bridge gate driver designed for driving 3-phase brushless DC (BLDC) motors. It can control six external N-channel MOSFETs with programmable gate drive currents, enabling optimized switching performance and reduced EMI. The device features SPI-configurable settings, integrated charge pump circuitry for 100% high-side duty-cycle operation, built-in voltage regulators, programmable analog front-end blocks, and comprehensive protection mechanisms, making it suitable for battery-powered motor control applications such as power tools, vacuum cleaners, e-bikes, robotics, and industrial automation. Key Features Triple half-bridge gate driver for 3-phase BLDC motor control Operating supply voltage range: 6 V to 50 V Programmable gate drive capability up to: 1 A source current 2 A sink current Integrated charge pump supporting 100% high-side duty cycle Embedded 12 V LDO regulator for gate-drive circuitry Embedded 3.3 V LDO regulator for low-voltage circuitry SPI-configurable parameters and diagnostic functions Up to three programmable-gain amplifiers (PGAs) Up to three high-speed comparators VDS monitoring for MOSFET protection Thermal shutdown protection Undervoltage lockout (UVLO) protection Dual control modes (ENx/INx or INHx/INLx) TTL-compatible logic inputs up to 5 V Ultra-low standby current consumption (<50 nA) Matched propagation delay across all channels #CommonPartsLibrary #IntegratedCircuit #STDRIVE102BP #STMicroelectronics #GateDriver #BLDCMotor #MotorControl #ThreePhaseMotor #MOSFETDriver #PowerTools #Robotics #IndustrialAutomation #EBike #SPI #BrushlessMotor #EmbeddedSystems #PowerElectronics

Six-channel low-side solenoid driver IC from Infineon Technologies. TLE92466EDXUMA1 integrates six constant-current low-side output channels, MOSFET power stages, current sensing, diagnostics, and a protected 32-bit SPI interface for automotive linear solenoid control in transmission, ESC, and active suspension applications. It uses a PG-DSO-36-72 exposed-pad package; per-channel programmed current is up to 1.5 A, dither operation supports up to 1.8 A, and 2.7 A applies to parallel-channel mode. #TLE92466EDXUMA1 #Infineon #AutomotiveIC #SolenoidDriver #CurrentControlIC #TransmissionControl #FunctionalSafety #ISO26262 #AECQ100 #AutomotiveElectronics #PowerManagement #EmbeddedSystems

N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor

N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

High-Side Gate Driver IC Non-Inverting 19-VSSOP The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail. As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control. The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations. The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs. Spec Sheet Identification Part Number: TPS48100QDGXRQ1 Device Family: TPS48100-Q1 Manufacturer: Texas Instruments Functional Classification Device Type: Dual high-side gate driver IC Driven Configuration: High-side Channel Type: Synchronous, dual independent drive channels Gate Type Driven: N-channel power MOSFET Input Logic: Non-inverting Electrical Characteristics Supply Voltage Range: Wide automotive-class supply range Quiescent Current: Low-IQ class, optimized for always-on automotive modules Output Drive Current: Symmetric source and sink peak output current Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation Protection & Diagnostics Application Context: Suited for protected high-side switching designs typical of the automotive driver family Robustness: Designed to tolerate automotive transient and load-dump conditions Environmental & Qualification Temperature Grade: Extended automotive operating temperature range Automotive Qualification: AEC-Q100 qualified RoHS Compliance: Yes Package Package Type: Small-outline surface-mount package, VSSOP style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options #TPS48100 #TexasInstruments #GateDriver #HighSideDriver #AutomotiveIC #AECQ100 #PowerManagement #MOSFETDriver #LowIQ #VSSOP #SurfaceMount #AutomotiveElectronics #PowerSwitching #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #VehicleElectronics #PCBDesign

The Hi5000Q is a high-precision, flicker-free LED constant-current driver IC designed for buck, boost, and buck-boost LED lighting applications. It supports external MOSFET operation, making it suitable for high-power LED systems such as automotive lighting, medical lighting, photography lamps, desk lamps, and educational lighting. Key Features Wide input voltage range: 6.5V to 75V Supports buck, boost, and buck-boost topologies External MOSFET architecture for high current capability Up to 10A continuous output current High efficiency operation exceeding 95% Flicker-free LED dimming control Supports: 100:1 PWM-to-analog dimming 10,000:1 hybrid dimming 10:1 analog dimming Fixed switching frequency of 130kHz Very low standby power consumption Excellent load regulation accuracy (less than ±0.5%) Built-in soft-start function Undervoltage protection (UVLO) Output overvoltage protection (OVP) Cycle-by-cycle current limiting protection Available in QFN16 4x4mm package