Power Switch/Driver 1:1 N-Channel 1.35A 28-WQFN (4x5) The TPS274160 device is a smart high-side switch with four integrated 160-mΩ NMOS power FETs and a chargepump to drive the gates. The device offers robust protection and diagnostic features to drive various loads (inductive, capacitive, and resistive) such as low wattage bulbs, LEDs, relays, solenoids, heaters, and sub-modules. The part enables flexible, multi-channel output configurations through paralleling channels and is in a very small WQFN package to enable usage in space constrained applications. The device is protected against short circuit events and over-temperature events, safely shutting off the output during fault events. The device also implements an external adjustable current limiting feature. This feature improves the reliability of the system by reducing inrush current when driving large capacitive loads and minimizing overload current thereby eliminating system supply brown out condition. The device also integrates diagnostic features like output current monitoring (version B) and open load detection to enable improved intelligence in modules and to enable predictive maintenance functionality. • Quad-channel 160-mΩ smart high-side switch • Wide DC operating voltage range: 5 V to 36 V – 50-V absolute maximum voltage • Accurate adjustable current limiting (250 mA to 4 A) • Intelligent diagnostic features – TPS274160A: Open-drain fault output – TPS274160B: Analog current sense – Open-load or short to supply detection in the off-state • Robust protection features – Short-circuit protection – Inductive load flyback clamp – Undervoltage lockout (UVLO) protection – Loss of GND protection • Excellent ESD protection on VS and OUT pins – ±8/±15 kV IEC 61000-4-2 ESD contact/air discharge • Available in small and 28-pin leadless QFN packages • Functional Safety-Capable – Documentation available to aid functional safety system design 2 Applications • Digital output modules • Standalone remote I/O • Motor drives • Solenoid or valve drive #TexasInstruments #TPS274160BRLHR #HighSideSwitch #SmartSwitch #IndustrialAutomation #PowerManagement #LoadDriver #CurrentLimiting #ProtectionIC #IndustrialControl #RemoteIO #SolenoidDriver #MotorDrive #EmbeddedSystems #ElectronicsDesign

TPS259621DDAR ESOP-8_L4.9-W3.9-P1.27-LS6.0-BL-EP LCSC Part Number: C2155774 JLCPCB Part Class: Extended Part Manufactured by TI(德州仪器) Texas Instruments TPS2596 eFuse integrated FET hot-swap protection IC, 2.7V to 19V input voltage range, 21V absolute maximum input rating, 0.125A to 2A adjustable current limit, 89mΩ typical on-resistance, accurate current monitor output, active-high enable with adjustable UVLO, fast overvoltage clamp or adjustable OVLO options, adjustable output slew-rate control, overtemperature protection, fault indication pin, IEC 61000-4-4 EFT immunity, -40°C to +125°C junction temperature range, SOIC-8 package. Search Keywords: TPS2596, Texas Instruments TPS2596, TI TPS2596, TPS2596 eFuse, TPS2596 hot swap controller, TPS2596 power protection IC, TPS2596 current limit switch, TPS259620DDA, TPS259621DDA, TPS259630DDA, TPS259631DDA, 2A eFuse, 19V eFuse, 89mOhm eFuse, adjustable current limit eFuse, overvoltage protection eFuse, current monitor eFuse, SOIC-8 eFuse, TPS2596 datasheet Hashtags: #TPS2596 #TexasInstrumentsTPS2596 #TIEFuse #eFuse #HotSwapProtection #PowerProtectionIC #CurrentLimitSwitch #IntegratedFETSwitch #2AeFuse #19VeFuse #89mOhmSwitch #OvervoltageProtection #UVLOProtection #CurrentMonitorIC #FaultIndicator #SOIC8 #TPS259620DDA #TPS259621DDA #TPS259630DDA #TPS259631DDA

This project is a Gesture Light Switch Relay module. It involves an STM32 microcontroller (STMicroelectronics) that interacts with an APDS-9960 sensor (Broadcom) to detect hand gestures. The gesture data is used to control a Toshiba TLP175A relay and an Everlight tri-color LED to switch the light and change colors, respectively. Power is supplied by a Diodes Incorporated's AP2112K-3.3TRG1 regulator. #referenceDesign #edge-computing #reusable #module #edge-computing #edgeComputing #stm #iot #relay

TPS4816-Q1 is an automotive-qualified high-side switch controller from Texas Instruments designed for intelligent power distribution, battery management, DC/DC converter protection, and automotive power systems. Supporting operating voltages from 3.5 V to 95 V (100 V absolute maximum), the device drives external N-channel MOSFETs and provides advanced protection, diagnostics, and bidirectional current monitoring. Integrated features include overcurrent protection with programmable circuit breaker timer (I²t), fast short-circuit protection, undervoltage and overvoltage protection, reverse polarity protection down to -60 V, gate pre-charge circuitry for capacitive loads, temperature monitoring, and fault diagnostics. The controller is optimized for 12 V, 24 V, and 48 V automotive architectures, offering low standby current, high reliability, and robust protection for power distribution and battery-connected systems. Search Keywords: TPS4816-Q1, TPS4816Q1, Texas Instruments TPS4816, High Side Switch Controller, Automotive High Side Driver, Smart High Side Switch, MOSFET Controller, Battery Protection Controller, Automotive Power Distribution, Electronic Fuse Controller, eFuse Controller, Reverse Polarity Protection IC, Bidirectional Current Monitor, I2t Protection Controller, Automotive Power Management IC, 48V Automotive System, DC DC Converter Protection, Battery Management System Controller, High Voltage Switch Controller, Automotive Diagnostics IC Hashtags: #TPS4816Q1 #TexasInstruments #HighSideSwitch #SmartSwitch #AutomotiveElectronics #PowerDistribution #BatteryManagement #PowerManagement #MOSFETDriver #EFuse #CircuitProtection #CurrentMonitoring #AutomotivePower #DCDCConverter #EmbeddedSystems #PowerElectronics #ElectronicsDesign #PCBDesign #HardwareEngineering #ElectricalEngineering

The HUSB238A is a highly integratedstand-aloneUSB Type-C® and Power Delivery (PD) Sinkcontroller.The HUSB238A integrates the CClogic, USBPDprotocol and the legacy protocols. The HUSB238A can run in I2C mode andGPIOmode.In I2C mode, an I2C master can access theHUSB238Ato configure settings, read back status andperformadvanced functions such as DRSwap, VDMmessages. The HUSB238A supports APDO, maximum48 V/5 A EPR FPDO and EPR AVSin I2Cmode. While in GPIO mode, the configuration is achievedviathe setting pins. The HUSB238A can beconfiguredtosupport maximum 28 V/3.25 A PDOviaVSETandISET pins, only two resistors are usedtoset thevoltage and current. The ultra-low operation current of theHUSB238Ahelps the system to reduce the total power dissipationand suitable for a battery application. The HUSB238A is available in QFN3 mmx3mm-16Lpackage. Fully Autonomous USB Type-C® and USB PD Sink Controller  USB Type-C® Specification Reversion 2.1 and USB PD Specification Reversion 3.1 Supported  Maximum 48 V/5 A PDO Supported – GPIO Mode: Maximum 28 V/3.25 A EPR FPDO and EPR AVS – I2C Mode: Maximum 48 V/5 A EPR FPDO, EPR AVS and SPR PPS Automatic Legacy Protocols Detection Including BC1.2, Divider 3, QC2.0 Support SOP’ Detection Typical Low Power Operation: IVDD< 75 μA Integrated VBUS Switch Driver Dead Battery Support VBUS Over-voltage Protection (OVP) and Under-voltage Protection (UVP) Over-temperature Protection (OTP) with Programmable Thresholds 2 kV HBM ESD Rating for USB IO Pins Small Package, 16 Lead QFN (3 mm x 3 mm) #CommonPartsLibrary #IntegratedCircuit #PowerManagement

USB Controller USB 2.0 I2C Interface 24-QFN (4x4) Standalone USB PD sink controller with short-to-VBUS protections • Auto-run Type-C™ and USB PD sink controller • Dead battery mode support • Up to 3 sink PDO configurable profiles • Dual high power charging path support • Integrated VBUS switch gate drivers (PMOS) • Integrated VBUS voltage monitoring • Internal and/or external VBUS discharge paths • Short-to-VBUS protections on CC pins (22 V) • High voltage capability on VBUS pins (28 V) • Dual power supply (VSYS and/or VDD): – VSYS = [3.0 V; 5.5 V] – VDD = [4.1 V; 22 V] • Debug accessory mode support • Temperature range: -40 °C up to 105 °C • ESD: 3 kV HBM - 1.5 kV CDM • Certified: – USB Type-C™ rev 1.2 – USB PD rev 2.0 (TID #1000133) • Interoperable with USB PD rev 3.0 #CommonPartsLibrary #IntegratedCircuit

The YFW AO3400 is a 30V N-Channel Enhancement MOSFET designed for low-voltage and high-speed switching applications. It uses advanced trench MOSFET technology to achieve low on-resistance (RDS(on)), fast switching performance, and efficient power handling in a compact SOT-23 package. It is commonly used in load switching, DC-DC converters, battery-powered devices, motor control, LED driving, and PWM switching circuits. Key Features N-Channel Enhancement Mode MOSFET Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.8A Low RDS(on): < 28mΩ @ VGS = 10V < 33mΩ @ VGS = 4.5V < 52mΩ @ VGS = 2.5V Logic-Level Gate Drive Compatible Fast Switching Speed Low Gate Charge Compact SOT-23 Package Suitable for PWM and Load Switch Applications RoHS / Pb-Free Compatible Typical Applications Power switching DC-DC converters Battery management systems Motor and fan control LED drivers Portable electronics Microcontroller-based switching circuits #CommonPartsLibrary #Transistor #FET #Mosfet

N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor

The RFFM6901 is a single-chip RF front-end module (FEM) designed for 868 MHz to 928 MHz ISM-band wireless communication applications. It integrates a high-power power amplifier (PA), low-noise amplifier (LNA), antenna diversity switch, and matching circuitry into a compact package, helping reduce external components, PCB space, and overall system cost. It is commonly used in smart energy systems, wireless metering, industrial monitoring, alarm systems, and other Sub-1 GHz wireless devices. Key Features Operating frequency range: 868 MHz to 928 MHz Integrated 1 W power amplifier Up to +30 dBm transmit output power Integrated low-noise amplifier with bypass mode Dual-port antenna diversity switch Separate 50 Ω transmit and receive interfaces Compact 32-pin LGA package (6 mm × 6 mm) Supply voltage range: 2.8 V to 4.2 V Typical LNA gain: 17 dB Low receiver noise figure: 1.5 dB Designed for portable and battery-powered wireless systems RoHS compliant Typical Applications Smart energy and smart metering Wireless alarm and security systems ISM-band communication devices Industrial wireless sensors Portable RF equipment IoT Sub-1 GHz wireless systems Search across more sources

Automotive single-port USB Type-C® PD controller with 240W EPR Automotive USB Type-C Power Delivery (PD) controller for single-port source applications, supporting USB PD 3.2 with Extended Power Range (EPR) up to 240 W. It provides USB-C cable detection, orientation detection, integrated VCONN switch, configurable GPIOs, I²C/UART/LIN interfaces, and controls external power supplies through I²C or PWM, with AEC-Q100 qualification for automotive applications.

Electronic Fuse Regulator 5.3A 20-WQFN (3x4) The TPS25940LRVCR is a compact eFuse (electronic fuse) power management IC from Texas Instruments designed to provide advanced power-path protection and load management for systems such as SSDs, servers, storage devices, and embedded electronics. It integrates protection features like overcurrent limiting, reverse current blocking, overvoltage protection, and controlled startup sequencing into a single chip. Wide input voltage range: 2.7 V to 18 V Adjustable current limit: 0.6 A to 5.3 A Low ON resistance: 42 mΩ typical True reverse current blocking using back-to-back MOSFETs Programmable output slew rate (dV/dt control) for inrush current management Overvoltage and undervoltage protection Fault and Power-Good outputs for system monitoring Current monitor (IMON) output Low-power DevSleep support for SSD applications Fast reverse voltage shutdown (~1 µs) Operating temperature: −40°C to +125°C junction temperature Available in a compact 20-pin WQFN package Typical Applications PCIe / SATA / SAS SSDs and HDDs Enterprise servers and storage systems RAID controller cards Smart load switches Set-top boxes and gaming systems Backup power and holdup capacitor systems Component Category This component belongs to: Power Management IC (PMIC) More specifically: eFuse / Hot-swap / Load Switch IC Package Information Package type: 20-WQFN (3 mm × 4 mm) Mounting type: Surface Mount (SMD) #commonpartslibrary #integratedcircuit #powermanagement #currentregulation

Power Switch/Driver 1:1 N-Channel 1.25A 16-DIP #CommonPartsLibrary #IntegratedCircuit #PowerManagement #switch #Load-driver #TBD62064

N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

REED SW, SPST, 10AT-15AT, 0.25A, 170VDC; Product Range:MISM-7 Series; Contact Configuration:SPST-NO; Switch Mounting:Surface Mount; Contact Current Max:250mA; Switching Voltage Max:170VDC; Switching Power Max:10W; Operate AT Min:10AT Littelfuse MISM-7R5-10-15 / MISM-7R-10-15 Littelfuse MISM-7R5-10-15 MISM-7R-10-15

Power Switch/Driver 1:1 Darlington 500mA 16-TSSOP #commonpartslibrary #integratedcircuit #powermanagement #powerswitch

Power Switch/Driver 1:1 Darlington 500mA 16-SOIC #commonpartslibrary #integratedcircuit #powerswitchdriver #pmic

Power Switch/Driver 1:1 Darlington 500mA 16-TSSOP #commonpartslibrary #integratedcircuit #powerswitch #powermanagement

Power Switch/Driver 1:1 P-Channel 2.1A SOT-26 #commonpartslibrary #integratedcircuit #powerswitchdriver

Power Switch/Driver 1:1 N-Channel 10A 16-HTSSOP #commonpartslibrary #integratedcircuit #powermanagement #powerswitch

Power Switch/Driver 1:1 P-Channel 1.8A SOT-23-6 #Commonpartslibrary #Integratedcircuit #Powermanagement

Power Switch/Driver 1:1 N-Channel 500mA SOT-23-5 #CommonPartsLibrary #IntegratedCircuit #PowerManagement #load-driver #TPS2041