Low-Side Gate Driver IC Non-Inverting 8-PDIP MOSFET Gate Driver for driving power MOSFETs and other capacitive loads. Operates from a 4.5V to 18V supply and provides 6A peak source/sink output current with high-speed switching. Features a single non-inverting driver in an 8-pin PDIP (CPA) package. #MOSFETGateDriver #GateDriver #SingleChannel #6A #4.5Vto18V #NonInverting #PDIP8 #Microchip

2.5A Gate Drive Optocoupler with Integrated LED Driver, Active Miller Clamp, DESAT Detection, and Fault & UVLO Status Feedback, SOIC-16 Gate Driver IGBT SOIC*7.5x10.3*P1.27mm*

High- and Low-Side Driver, 600V, 2.5/2.5A, MLPQ-14 Gate Driver Infineon*MLPQ*EP*4x4mm*P0.5mm*

High- and Low-Side Driver, 600V, 1.9/2.3A, MLPQ-14 Gate Driver Infineon*MLPQ*EP*4x4mm*P0.5mm*

STDRIVEG600 half-bridge gate driver for enhancement-mode GaN FETs and N-channel power MOSFETs, high-side section rated up to 600V, suitable for bus voltages up to 500V, high-current drive capability, short propagation delay, supply voltage down to 5V, UVLO protection for high-side and low-side drivers, interlock protection against cross-conduction, 3.3V CMOS/TTL compatible logic inputs for MCU and DSP control.

IC HALF BRIDGE DRVR 5.5A/6A 16SO STDRIVEG600 single-chip half-bridge gate driver for enhancement-mode GaN FETs and N-channel power MOSFETs, high-side voltage up to 600V, suitable for bus voltages up to 500V, designed for high-speed GaN and Si FET driving, high current capability, short propagation delay, supply voltage down to 5V, UVLO protection on high-side and low-side sections, interlocking function to prevent cross-conduction, 3.3V CMOS/TTL compatible logic inputs for MCU/DSP interface.

OR Controller N+1 ORing Controller N-Channel 1:1 TSOT-23-8 The LM74700QDDFRQ1 is an automotive-qualified ideal diode controller designed to provide reverse polarity protection, reverse current blocking, and input power path management in low-voltage DC power systems. The device controls an external N-channel MOSFET to emulate an ideal diode with very low forward voltage drop and reduced power dissipation compared to conventional Schottky diodes. It is optimized for automotive and industrial applications requiring robust protection against negative supply voltages, load dump conditions, and reverse battery events. The controller supports wide input voltage operation and integrates fast response circuitry for fault handling and transient protection. The device is suitable for power OR-ing, hot-swap, redundant power supply systems, and battery-connected applications where efficiency, reliability, and thermal performance are critical. Engineering Specification Device Type Automotive ideal diode controller with reverse battery and reverse current protection Qualification Standard AEC-Q100 qualified for automotive applications Control Topology External N-channel MOSFET controller for ideal diode operation Input Voltage Range Supports wide automotive and industrial supply voltage ranges Reverse Polarity Protection Provides protection against negative input voltage conditions and reverse battery connection Reverse Current Blocking Actively prevents reverse current flow during output-to-input fault conditions Forward Voltage Drop Low conduction losses through external MOSFET control for high-efficiency power delivery Transient Protection Capable of handling automotive transient events including load dump conditions Gate Drive Control Integrated gate driver optimized for fast MOSFET switching and protection response Power Path Management Supports power OR-ing and redundant supply architectures Fault Response Fast turn-off during reverse current and fault events Current Consumption Low operating quiescent current suitable for always-on systems Thermal Performance Designed for efficient thermal operation with external MOSFET-based power dissipation Operating Temperature Range Automotive-grade extended temperature operation Package Type Small-outline automotive package suitable for compact PCB layouts #commonpartsLibrary #integratedcircuit #powermanagement #orcontroller

USB Controller USB 2.0 I2C Interface 24-QFN (4x4) The STUSB4500QTR is a standalone USB Type-C Power Delivery (PD) controller from STMicroelectronics designed for power sink applications (devices that receive power, like chargers, IoT devices, or battery-powered systems). It enables automatic negotiation of USB Power Delivery contracts (up to 100 W: 20 V / 5 A) without requiring an external microcontroller, thanks to its built-in auto-run algorithm. Power profiles (PDOs) can be pre-configured and stored in internal non-volatile memory, simplifying system design and reducing component count. The device is optimized for modern USB-C designs, offering robust protection, high-voltage tolerance, and support for operation even from a dead battery state. Key Features Power Delivery & Control Standalone USB Type-C™ and USB PD sink controller Supports up to 100 W (20 V, 5 A) power negotiation Auto-run mode (no MCU required) for PD negotiation Up to 3 configurable sink PDO profiles stored in NVM Power Management Dead battery mode support (can start with no battery power) Dual power supply inputs: V_SYS: 3.0 V – 5.5 V V_DD: 4.1 V – 22 V Integrated VBUS monitoring and control Integrated Functions Built-in VBUS switch gate drivers (PMOS) Internal/external VBUS discharge paths I²C interface for configuration and monitoring Protection & Reliability Short-to-VBUS protection on CC pins (up to 22 V) High-voltage tolerance: Up to 28 V on VBUS pins ESD protection: 3 kV HBM / 1.5 kV CDM Physical & Environmental Package: QFN-24 (4×4 mm) Operating temperature: –40°C to +105°C Industrial-grade reliability Compliance & Compatibility Certified for: USB Type-C Rev 1.2 USB PD Rev 2.0 Interoperable with USB PD 3.0 #commonpartslibrary #integratedcircuit #usbcontroller

MOSFET DRIVER Half-Bridge Gate Driver IC Non-Inverting 1.5A 2-OUT High and Low Side 8-SOIC #CommonPartsLibrary #IntegratedCircuit #PowerManagement #GateDriver #MIC4604

GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion

High and Low Side Driver, 200V, 290/600mA, MLPQ-14 Gate Driver Infineon*MLPQ*EP*4x4mm*P0.5mm*

High and Low Side Driver, 200V, 3.0/3.0A, PDIP-14 Gate Driver DIP*W7.62mm*

200V 30A 3.4V 51W 82mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS N-channel power MOSFET designed for high-speed switching and power conversion applications. It features a 200 V drain-to-source voltage (VDS), 30 A continuous drain current (ID), 82 mΩ typical RDS(on) at VGS = 10 V, and is housed in a TO-252 (DPAK) package. The device also specifies a 6.5 nC typical total gate charge, 380 pF typical input capacitance, and supports a maximum junction temperature of 150°C. #NChannelMOSFET #PowerMOSFET #200V #30A #TO252 #DPAK #FastSwitching #PowerManagement #DiscreteSemiconductor #XNRUSEMI

Automotive N-Channel Power MOSFET – 30 V N-channel TrenchFET® Gen IV power MOSFET optimized for automotive power distribution, battery management systems (BMS), motor drives, DC-DC converters, load switching, and high-current embedded power applications. Features a 30 V drain-to-source voltage (VDS), 437 A continuous drain current (TC = 25°C), and ultra-low RDS(on) of 1.16 mΩ maximum at VGS = 10 V (1.66 mΩ maximum at VGS = 4.5 V) for exceptionally low conduction losses. Offers ±20 V gate-to-source voltage, 595 A pulsed drain current, 500 W maximum power dissipation, low gate charge, optimized Qgd/Qgs ratio for fast switching, and an integrated body diode for high-efficiency switching applications. Qualified to AEC-Q101, 100% Rg and UIS tested, and specified for operation over a −55°C to +175°C junction temperature range. Housed in a PowerPAK® SO-8L surface-mount package. #Vishay #SQJ128ELPT1GE3 #SQJ128ELP #NChannelMOSFET #TrenchFET #PowerMOSFET #DCDCConverter #BatteryManagement #MotorDrive #AutomotiveElectronics #PowerPAKSO8L #EmbeddedSystems