• AR0144CS Reference design

    AR0144CS Reference design

    This project is schematic and PCB design for an AR0144CS camera sensor-based system. #project #Template #projectTemplate #referenceDesign #onsemi #industrialSensing #referenceDesign #industrialsensing #onsemi #template #reference-design #polygonb

    vasy_skral

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    jharwinbarrozo
    cherepanyadima

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  • NCV7344MW0R2G Reference Design

    NCV7344MW0R2G Reference Design

    This is a reference design of NCV7344MW0R2G with a standard configuration for normal mode #NCV7344MW0R2G #can #interface #template #transceiverCircuit #referenceDesign #canbus #onsemi #reference-design

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  • QRE1113 Reference Design

    QRE1113 Reference Design

    This project is a QRE1113 opto-reflective sensor circuit, using a 47K pull-up resistor (R2) and a 100 Ohm resistor (R1). It includes a 1µF capacitor (C1) for stability and attaches to a JST connector (J1) for easy interfacing. Power is provided via VCC, with the output signal (OPTO_OUT) fed back. #referenceDesign #industrialsensing #onsemi #template #reference-design


  • NCV7356D1R2G Reference Design

    NCV7356D1R2G Reference Design

    This is a reference design of NCV7356D1R2G with a standard configuration for normal mode #NCV7356D1R2G #can #interface #transceiverCircuit #referenceDesign #canbus #onsemi #reference-design

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    jharwinbarrozo


  • MMBFJ177

    MMBFJ177

    The J175, J176, MMBFJ175, MMBFJ176, and MMBFJ177 are a series of P-Channel switches designed and manufactured by onsemi™, suitable for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. These components are sourced from process 88, indicating a specific manufacturing technique employed by onsemi™ to ensure consistent performance and reliability. The devices are offered in both TO-92 and SOT-23 packages, catering to a variety of mounting preferences and application requirements. They are characterized by their ability to handle a drain-gate voltage of -30V, a gate-source voltage of 30V, and a forward gate current of 50 mA. Operating and storage junction temperature ranges are specified from -55 to +150°C, ensuring robustness across a wide range of environmental conditions. With features like low on-resistance and high transconductance, these components are optimized for efficient signal modulation and minimal power loss, making them highly suitable for precision applications in analog signal processing.

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