N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

N-Channel 68 V 80A (Tc) 190W (Tc) Through Hole TO-220 # STP75NF68 ## General Description The STP75NF68 is a high-performance N-channel power MOSFET manufactured by STMicroelectronics and designed for efficient power switching and power management applications. Utilizing advanced STripFET™ power MOSFET technology, the device offers low on-state resistance, high current-handling capability, and excellent switching performance. Its rugged construction and optimized electrical characteristics make it suitable for industrial automation systems, motor control applications, power supplies, battery-powered equipment, DC-DC converters, automotive-support systems, and general-purpose power electronics. The device is engineered to provide high efficiency, reduced power losses, and reliable operation in demanding switching environments. ## Key Features ### Power MOSFET Architecture * N-channel enhancement-mode MOSFET * Advanced STripFET™ technology * Low on-state resistance * High-current switching capability * Optimized power conversion efficiency * Fast switching performance ### Electrical Characteristics * Low conduction losses * High-current carrying capability * Low gate drive requirements * Stable switching operation * Efficient energy transfer performance * Suitable for high-power electronic systems ### Switching Performance * Fast turn-on characteristics * Fast turn-off characteristics * Reduced switching losses * High-frequency operation support * Reliable dynamic performance * Enhanced power management capability ### Thermal Characteristics * High power dissipation capability * Efficient thermal transfer performance * Suitable for heatsink integration * Reliable operation under continuous load conditions * Stable thermal behavior in demanding applications ### Protection and Reliability * Avalanche-rated performance * Rugged semiconductor construction * High reliability under transient conditions * Long operational service life * Enhanced electrical robustness ### Package Characteristics * Through-hole power package * Industry-standard footprint * Easy integration into power electronic assemblies * Suitable for industrial and commercial applications * Compatible with automated and manual assembly processes ### Material Construction * Advanced silicon power MOSFET technology * High-reliability semiconductor materials * RoHS-compliant construction * Lead-free compatible package * Industrial-grade manufacturing quality ### Environmental Characteristics * Suitable for industrial operating environments * Reliable performance under continuous operation * Resistant to electrical and thermal stress * Long-term operational stability ### Application Areas * Motor Control Systems * Switching Power Supplies * DC-DC Converters * Battery Management Systems * Industrial Automation Equipment * Power Distribution Systems * Renewable Energy Equipment * Inverter Applications * Embedded Power Electronics * Automotive Electronic Systems * Uninterruptible Power Supplies * General Power Switching Circuits ### Compliance * RoHS Compliant * Lead-Free Compatible * Industrial-Grade Power Semiconductor Solution ## Manufacturer STMicroelectronics ## Product Family STripFET™ N-Channel Power MOSFET Series #STP75NF68 #STMicroelectronics #PowerMOSFET #NChannelMOSFET #STripFET #PowerElectronics #MotorControl #SwitchingPowerSupply #DCDCConverter #BatteryManagement #IndustrialElectronics #PowerManagement #EmbeddedSystems #ElectronicsEngineering #PowerSemiconductor

N-Channel 200 V 120A (Tc) 714W (Tc) Through Hole TO-247AD (IXFH) # IXFH120N15P ## General Description The IXFH120N15P is a high-current N-channel power MOSFET manufactured by Littelfuse IXYS. It is designed for demanding power switching and power conversion applications requiring low conduction losses, fast switching performance, and high current-handling capability. Built using advanced power MOSFET technology, the device provides excellent efficiency, ruggedness, and thermal performance for industrial power systems, motor drives, battery management equipment, welding systems, uninterruptible power supplies, renewable energy systems, and high-power DC switching applications. Its robust construction and low on-state resistance make it particularly suitable for designs requiring high efficiency and reliable operation under heavy load conditions. ## Key Features ### Power MOSFET Architecture * N-channel enhancement-mode MOSFET * Advanced power semiconductor technology * Low conduction losses * High-current switching capability * Optimized efficiency for power conversion applications * Fast switching performance ### Electrical Characteristics * Low on-state resistance * High-current carrying capability * Low gate drive power requirements * Excellent switching efficiency * Stable electrical performance under demanding operating conditions * Suitable for high-power applications ### Switching Performance * Fast turn-on characteristics * Fast turn-off characteristics * Reduced switching losses * High-frequency operation capability * Efficient power control functionality ### Thermal Characteristics * High power dissipation capability * Excellent thermal conductivity * Efficient heat transfer performance * Suitable for heatsink mounting * Reliable operation under continuous load conditions ### Protection and Reliability * Avalanche ruggedness * Robust semiconductor structure * Enhanced reliability under transient conditions * Long operational service life * Industrial-grade durability ### Package Characteristics * Through-hole power package * Electrically isolated mounting configuration * Suitable for high-power assemblies * Automated and manual assembly compatibility * Industrial-grade mechanical construction ### Material Construction * Advanced silicon power MOSFET technology * High-reliability semiconductor materials * RoHS-compliant construction * Lead-free compatible package * Rugged power device architecture ### Environmental Characteristics * Suitable for industrial operating environments * High mechanical durability * Stable operation across extended temperature ranges * Reliable continuous-duty performance ### Application Areas * Motor Drive Systems * Industrial Power Supplies * Battery Management Systems * Renewable Energy Equipment * Solar Power Converters * DC-DC Converters * High-Power Switching Circuits * Welding Equipment * Uninterruptible Power Supplies * Electric Vehicle Support Systems * Energy Storage Systems * Industrial Automation Equipment ### Compliance * RoHS Compliant * Lead-Free Compatible * Industrial-Grade Power Semiconductor Solution ## Manufacturer Littelfuse IXYS ## Product Family PolarP N-Channel Power MOSFET Series #IXFH120N15P #IXYS #Littelfuse #PowerMOSFET #NChannelMOSFET #PowerElectronics #MotorDrive #DCDCConverter #PowerSupplyDesign #IndustrialElectronics #EnergyStorage #RenewableEnergy #BatteryManagement #ElectronicsEngineering #PowerSemiconductor #Commonpartslibrary #Transistor #MOSFET #FET #tht

N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification

N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier

N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor

Operate a BLDC motor with block or sinecommutation using 6-line control from a CPU. Integrated power-MOSFETs handle motor current up to 2A

TC4427EOA SOIC-8_L4.9-W3.9-P1.27-LS6.0-TR LCSC Part Number: C636891 JLCPCB Part Class: Extended Part Manufactured by MICROCHIP(美国微芯) Microchip TC4426 dual high-speed MOSFET gate driver, 1.5A peak source/sink output current, 4.5V to 18V supply voltage range, matched rise and fall times, 25ns typical rise/fall time with 1000pF load, 40ns typical propagation delay, 7Ω output impedance, latch-up protected, withstands ±500mA reverse output current, accepts negative input swings up to 5V, ESD protected to 2kV, designed for driving power MOSFETs, SMPS, pulse transformers and line drivers, available in SOIC-8, PDIP-8, MSOP-8 and DFN-8 packages. Search Keywords: TC4426, TC4426CPA, TC4426COA, TC4426A, Microchip TC4426, MOSFET gate driver, dual MOSFET driver, 1.5A gate driver, high speed MOSFET driver, power MOSFET driver, gate driver IC, low side MOSFET driver, SMPS gate driver, pulse transformer driver, TC4426 SOIC-8, TC4426 DFN-8, TC4426 MSOP-8, TC4426 PDIP-8 Hashtags: #TC4426 #MicrochipTC4426 #MOSFETDriver #GateDriver #DualMOSFETDriver #15AGateDriver #PowerMOSFETDriver #HighSpeedGateDriver #LowSideDriver #SMPSDriver #PulseTransformerDriver #LineDriver #SOIC8 #MSOP8 #DFN8 #PDIP8 #Microchip #GateDriverIC #PowerElectronics #SwitchModePowerSupply