MOSFET N-CH 20V 3.6A SOT-23 The IRLML2502 is a small-signal N-channel enhancement mode power MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used as a load switch or power control transistor in compact electronic systems such as battery-powered devices, LED drivers, and DC-DC converters. It features a low on-resistance (RDS(on)), which allows it to switch higher currents with minimal power loss and heat generation. The device is optimized for logic-level gate drive, meaning it can be driven directly from microcontrollers (like 3.3 V or 5 V systems). It is packaged in a compact SOT-23 (Micro3) surface-mount package, making it suitable for space-constrained PCB designs. Key Features N-channel enhancement mode MOSFET Drain-source voltage (VDS) up to 20 V Continuous drain current up to ~4.2 A (at 25°C) Very low RDS(on) ≈ 45 mΩ @ VGS = 4.5 V Logic-level gate drive capability (works with 2.5–4.5 V signals) Fast switching performance Compact SOT-23 (Micro3) surface-mount package Low gate charge for efficient switching Suitable for battery-powered and low-voltage applications RoHS compliant, lead-free design #IRLML2502 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LogicLevelMOSFET #PowerSwitch #ElectronicComponents #EmbeddedSystems #PCBDesign

N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

MOSFET N-CH 20V 6.3A SOT-23 The IRLML6244TRPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies (originally International Rectifier HEXFET series). It is designed for low-voltage power switching applications such as load switching, DC-DC converters, and LED control. It comes in a compact SOT-23 (Micro3™) surface-mount package, making it suitable for space-constrained PCB designs while still handling relatively high current for its size. Key Features Drain-Source Voltage (VDS): 20 V Continuous Drain Current: up to ~6.3 A (at 25°C) Very low RDS(on): ~21 mΩ @ VGS = 4.5 V ~27 mΩ @ VGS = 2.5 V Low gate threshold voltage (~0.5–1.1 V typical range) (note: not a switching guarantee) Gate-to-source voltage rating: ±12 V Low power loss due to low on-resistance High efficiency switching for low-voltage systems Power dissipation: ~1.3 W (thermal limited in SOT-23 package) Fast switching performance (low gate charge ~8.9 nC) Operating temperature range: −55°C to +150°C RoHS compliant (lead-free, halogen-free) Typical Applications Low-side load switching (MCUs, GPIO control) LED strip / RGB LED drivers Battery-powered systems DC-DC converter switching Small motor or relay driving General-purpose power management in compact electronics Important Design Note Even though it has a low VGS(th), this MOSFET is not selected based on threshold voltage. What matters is the RDS(on) at your gate drive voltage (2.5 V / 3.3 V / 5 V) to ensure it fully turns on with minimal heating. #CommonPartsLibrary #Transistor #FET #IRLML6244 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #Infineon #HEXFET #LEDDriver #LowSideSwitch #ElectronicsComponents

N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier

The FS8205A is a dual N-channel enhancement-mode power MOSFET designed primarily for lithium-ion and lithium-polymer battery protection applications. Manufactured by several semiconductor vendors including Fortune Semiconductor, this device integrates two low on-resistance MOSFETs within a compact surface-mount package, enabling efficient bidirectional current control for battery charging and discharging systems. The device is commonly paired with single-cell battery protection controller ICs such as the DW01A to provide overcharge, overdischarge, overcurrent, and short-circuit protection in portable electronic products. Its low drain-to-source resistance minimizes conduction losses and improves overall battery efficiency while maintaining compact PCB layout requirements. The FS8205A is widely used in battery management systems, portable consumer electronics, rechargeable battery packs, USB-powered devices, IoT hardware, and embedded power management circuits requiring reliable load switching and battery protection functionality. Engineering Specification Device Type Dual N-channel power MOSFET Transistor Technology Enhancement-mode MOSFET architecture Channel Configuration Dual independent N-channel MOSFETs Switching Characteristics Low on-resistance for efficient power switching Gate Characteristics Logic-level gate drive compatibility Current Handling Optimized for battery charge and discharge current control Power Efficiency Low conduction loss for improved battery runtime Protection System Compatibility Designed for lithium battery protection controller integration Thermal Characteristics Compact thermal-efficient surface-mount structure Package Type SOP-8 surface-mount package Mounting Style Surface mount technology Reliability Features Stable switching performance and robust load handling capability Applications Lithium-ion battery protection Battery management systems Portable electronics Rechargeable battery packs USB-powered devices Power path switching Embedded systems Consumer electronics IoT hardware Load switching circuits Manufacturer Commonly manufactured by Fortune Semiconductor and compatible vendors #commonpartslibrary #mosfet #dualmosfet #nchannelmosfet #batteryprotection #batterymanagement #powermanagement #powerelectronics #embeddedhardware #consumerelectronics #surfaceountcomponents #electronicsdesign #lithiumbattery #loadswitch #portableelectronics

The SI2300 is a N-channel enhancement-mode MOSFET designed for efficient switching and power management applications. Fabricated using advanced trench MOS technology, it delivers low on-state resistance, fast switching performance, and high current handling capability within a compact surface-mount package. The device is widely used in load switching, battery-powered equipment, DC-DC converters, motor control circuits, power distribution systems, and general-purpose switching applications where efficiency and space optimization are critical. Features N-channel enhancement-mode MOSFET Low on-state resistance for reduced conduction losses Fast switching characteristics Low gate charge for efficient drive operation Compact surface-mount package High current carrying capability Low power dissipation design Optimized for battery-operated systems Suitable for high-speed switching applications RoHS-compliant and lead-free construction Applications Power management circuits Load switching systems Battery protection modules Portable electronic devices DC-DC converter circuits Motor drive applications Power distribution networks Embedded control systems Consumer electronics Industrial automation equipment Electrical Characteristics Low drain-to-source on-resistance High drain current capability Low gate threshold voltage Fast turn-on and turn-off response Low gate capacitance High switching efficiency Low leakage current characteristics Enhanced thermal performance Stable operation across specified temperature ranges Reliable avalanche and transient performance Mechanical Characteristics Surface-mount package construction Compact footprint for high-density PCB layouts Suitable for automated assembly processes Compatible with standard reflow soldering methods Tape-and-reel packaging availability Robust package integrity for production environments Environmental Characteristics Industrial-grade reliability Resistance to mechanical shock and vibration within specification limits Moisture-resistant package design Suitable for operation in demanding electronic environments Compliant with RoHS and environmental regulations Long operational lifetime under recommended operating conditions #commonpartslibrary #mosfet #nchannelmosfet #powermanagement #powerswitching #semiconductor #transistor #loadswitch #dcdcconverter #batteryprotection #embeddedsystems #industrialelectronics #consumerelectronics #smtcomponent #electronicsdesign

UCC27211ADRMR VSON-8_L4.0-W4.0-P0.80-TL-EP LCSC Part Number: C1848363 JLCPCB Part Class: Extended Part Manufactured by TI(德州仪器) Texas Instruments UCC27211 120V half-bridge gate driver for two N-channel MOSFETs in high-side and low-side configuration, 3.7A source and 4.5A sink peak output currents, integrated 120V bootstrap diode, 8V to 17V VDD operating range, TTL-compatible independent inputs, input pins tolerate -10V to 20V, fast 20ns typical propagation delay, 7.2ns rise and 5.5ns fall time with 1000pF load, 4ns delay matching, symmetrical UVLO protection for high-side and low-side drivers, -40°C to +150°C operating temperature, available in SOIC-8, PowerPAD SOIC-8 and WSON-10 packages. Search Keywords: UCC27211, Texas Instruments UCC27211, TI UCC27211, UCC27211 half bridge driver, UCC27211 gate driver, UCC27211 MOSFET driver, 120V half bridge gate driver, 3.7A 4.5A gate driver, high side low side driver, N-channel MOSFET driver, UCC27211 SOIC-8, UCC27211 PowerPAD, UCC27211 WSON-10, UCC27211 8V UVLO, UCC27211 bootstrap diode, UCC27211 datasheet Hashtags: #UCC27211 #TexasInstrumentsUCC27211 #TIGateDriver #HalfBridgeDriver #HalfBridgeGateDriver #MOSFETDriver #NChannelMOSFETDriver #HighSideLowSideDriver #120VGateDriver #3A7GateDriver #4A5GateDriver #BootstrapDiodeDriver #UVLODriver #TTLInputDriver #SOIC8 #PowerPADSOIC8 #WSON10