Bipolar (BJT) Transistor NPN 40V 600 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236) The MMBT2222ALT3G is a NPN general-purpose bipolar junction transistor (BJT) manufactured by onsemi, designed in a SOT-23 surface-mount package. It is the SMD version of the well-known 2N2222A transistor family, used for switching and signal amplification in compact electronic circuits. It is widely used in industrial, automotive (AEC-Q101 qualified variants), and general embedded systems due to its reliability, small size, and good electrical performance. Key Features NPN General-Purpose Transistor Suitable for switching and low-power amplification Collector-Emitter Voltage (Vceo) Up to 40 V Collector Current Up to 600 mA Power Dissipation Around 225–300 mW (depending on package conditions) High Frequency Performance Transition frequency up to ~300 MHz DC Current Gain (hFE) Typically ~100 at moderate currents Low Saturation Voltage Efficient switching performance for digital circuits SOT-23 Surface-Mount Package Compact footprint for modern PCB designs Wide Temperature Range Typically -55°C to +150°C RoHS / Lead-Free Compliant Environmentally compliant manufacturing Typical Applications LED switching circuits Relay driver stages MCU signal interfacing (Arduino, ESP32, etc.) Small motor drivers General signal amplification Automotive and industrial control circuits Important Note MMBT2222ALT3G = SMD version (SOT-23) Equivalent to 2N2222A (TO-92 through-hole version) in function, but not in physical package. 2N2222A SOT-23 #commonpartslibrary #transistor #bjt

Automotive N-Channel Power MOSFET – 30 V N-channel TrenchFET® Gen IV power MOSFET optimized for automotive power distribution, battery management systems (BMS), motor drives, DC-DC converters, load switching, and high-current embedded power applications. Features a 30 V drain-to-source voltage (VDS), 437 A continuous drain current (TC = 25°C), and ultra-low RDS(on) of 1.16 mΩ maximum at VGS = 10 V (1.66 mΩ maximum at VGS = 4.5 V) for exceptionally low conduction losses. Offers ±20 V gate-to-source voltage, 595 A pulsed drain current, 500 W maximum power dissipation, low gate charge, optimized Qgd/Qgs ratio for fast switching, and an integrated body diode for high-efficiency switching applications. Qualified to AEC-Q101, 100% Rg and UIS tested, and specified for operation over a −55°C to +175°C junction temperature range. Housed in a PowerPAK® SO-8L surface-mount package. #Vishay #SQJ128ELPT1GE3 #SQJ128ELP #NChannelMOSFET #TrenchFET #PowerMOSFET #DCDCConverter #BatteryManagement #MotorDrive #AutomotiveElectronics #PowerPAKSO8L #EmbeddedSystems

SMAJ5.0A-Q is an automotive-grade, unidirectional Transient Voltage Suppressor (TVS) diode from Bourns. It is designed to protect sensitive electronic circuits from Electrostatic Discharge (ESD), Electrical Fast Transients (EFT), lightning-induced surges, and other transient overvoltage events. The device is commonly used on 5 V power rails and communication interfaces in automotive, industrial, and telecom applications. Key Features Unidirectional TVS diode for DC line protection. 5 V reverse standoff voltage (VRWM) suitable for 5 V systems. 6.4 V minimum breakdown voltage (VBR). 9.2 V maximum clamping voltage (VC) at peak pulse current. 400 W peak pulse power dissipation (10/1000 μs waveform). 43.5 A peak pulse current (IPP) capability. AEC-Q101 qualified for automotive applications. Fast response time (<1 ps typical) for effective transient suppression. Wide operating temperature range: -55°C to +150°C. Surface-mount DO-214AC (SMA) package for compact PCB designs. RoHS compliant and suitable for automated assembly processes. Typical Applications Automotive ECUs and power rails 5 V power supplies Telecom equipment Industrial control systems I/O ports and communication interfaces Consumer electronics requiring surge protection #CommonPartsLibrary #Diode

P-Channel 60 V 30A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8 #BUK6Y33-60PX #Nexperia #TrenchMOS #PChannelMOSFET #PowerMOSFET #LFPAK56 #PowerSO8 #SurfaceMount #AECQ101 #AutomotiveGrade #PowerManagement #MotorControl #LoadSwitch #DiscreteSemiconductor #CommonPartsLibrary

P-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC The SQ4435EY-T1_GE3 is an automotive-grade P-Channel enhancement-mode TrenchFET® power MOSFET from Vishay Siliconix. It is designed for efficient high-side load switching and power management applications, offering low on-resistance, fast switching performance, and excellent thermal reliability. Qualified to AEC-Q101, this MOSFET is suitable for demanding automotive and industrial environments. It is housed in a compact SO-8 surface-mount package, making it ideal for space-constrained designs. Key Features P-Channel enhancement-mode TrenchFET® MOSFET 30 V drain-to-source voltage (VDS) 15 A continuous drain current (TC = 25°C) Low RDS(on): 18 mΩ max @ VGS = -10 V 31 mΩ max @ VGS = -4.5 V AEC-Q101 qualified for automotive applications Operating junction temperature: -55°C to +175°C Low conduction losses for improved power efficiency Fast switching characteristics 100% Rg and UIS tested RoHS compliant and halogen-free Compact SO-8 surface-mount package Typical Applications Automotive high-side load switches Battery management systems (BMS) DC-DC converters Power distribution switches Motor control circuits Industrial power management Reverse battery protection #Vishay #SQ4435EY #PChannelMOSFET #TrenchFET #PowerMOSFET #Automotive #AECQ101 #HighSideSwitch #PowerManagement #DCDC #BatteryManagement #SO8 #IndustrialElectronics #LowRDSon #SurfaceMount

Ultra-Low Capacitance Quad-Channel ESD Protection Array – Four-channel rail-to-rail transient voltage suppressor (TVS) / ESD protection array designed to protect high-speed data and communication interfaces including USB 2.0, HDMI, DVI, Ethernet, mobile devices, and embedded systems from electrostatic discharge (ESD) and transient overvoltage events. Features ultra-low 1 pF input/output capacitance to preserve signal integrity on high-speed lines, 6 V minimum breakdown voltage, and IEC 61000-4-2 Level 4 ESD protection (±8 kV contact discharge) with very low clamping voltage through an integrated rail-to-rail steering diode architecture. Includes four unidirectional protection channels, low reverse leakage current, and AEC-Q101 qualification for automotive applications. Specified for operation over a −55°C to +150°C ambient temperature range and housed in a compact 6-pin TSOP (SOT-457 / SC-74) surface-mount package. #Nexperia #PRTR5V0U4D125 #PRTR5V0U4D #TVSDiode #ESDProtection #TransientProtection #USBProtection #HDMIProtection #DVISProtection #HighSpeedInterface #AutomotiveElectronics #EmbeddedSystems

602A Id, 60V Vds, N-Channel TrenchFET MOSFET, 0.85mOhm Ron, 42nC Qqd, -55 to 175 °C, LFPAK88 Power MOSFET N-MOS Automotive AEC-Q101 PowerPAK 8x8L LFPAK88*

Automotive 6.6 kW Surface-Mount TVS Diode – Unidirectional transient voltage suppressor (TVS) diode designed for automotive electronics, industrial power supplies, DC power rails, telecom equipment, battery protection, load dump suppression, and embedded circuit protection applications. The Littelfuse SM8S33A features a 33 V reverse standoff voltage (VRWM), 36.7 V minimum breakdown voltage, and 53.3 V maximum clamping voltage at a 132 A peak pulse current (10/1000 µs). Rated for 6.6 kW peak pulse power dissipation, it provides robust protection against ESD, lightning-induced surges, inductive switching transients, and automotive load dump events. Features AEC-Q101 qualification, low leakage current (2 µA typical), fast response time, and high surge capability for demanding environments. Packaged in a SMTO-263 (DO-218AB-compatible) surface-mount package, it operates over a −55°C to +175°C junction temperature range, making it ideal for high-reliability automotive and industrial designs. #Littelfuse #SM8S33A #TVSDiode #TransientVoltageSuppressor #CircuitProtection #ESDProtection #SurgeProtection #LoadDumpProtection #AECQ101 #AutomotiveElectronics #IndustrialElectronics #EmbeddedSystems

8A@8/20us 54V 26.7V 24V SOT-23 ESD and Surge Protection ESD DIODE 24VWM 41VC SOT-23 PESD2CAN is a dual-line ESD protection diode designed to protect automotive Controller Area Network (CAN) bus interfaces from Electrostatic Discharge (ESD), surge events, and other transient voltage disturbances. It is housed in a compact SOT-23 package and provides protection for both CANH and CANL lines using a single device. Key Features Dual CAN bus line protection in a single SOT-23 package Maximum peak pulse power: 230 W (8/20 μs surge waveform) Low clamping voltage: 41 V at 5 A surge current Ultra-low leakage current: < 1 nA ESD protection up to 30 kV Compliant with IEC 61000-4-2 Level 4 ESD standard Compliant with IEC 61000-4-5 surge immunity standard AEC-Q101 qualified for automotive applications Reverse standoff voltage: 24 V Low capacitance (typically 25 pF) to minimize impact on CAN signal integrity Suitable for both high-speed and fault-tolerant CAN networks Typical Applications Automotive CAN bus networks Industrial CAN communication systems Automotive electronic control units (ECUs) CAN transceivers requiring ESD and surge protection Any differential communication interface exposed to external connectors Package SOT-23 (3-pin) Surface-Mount Device (SMD) package. #CommonPartsLibrary #Diode