修正PCB短路与浮铜
Worked for 4 mins 46 sec
已按“模块接口”完成输出级原理图骨架，没有放入任何错误的三脚 MOSFET 替代件。
已添加并连接：
CELL_DC_P / CELL_DC_N：输出单元直流母线接口CELL_OUT：半桥/多电平单元输出节点HS_GATE / HS_KS：高边未来 CI90N120SM4 的 Gate / Kelvin Source 接口LS_GATE / LS_KS：低边未来 CI90N120SM4 的 Gate / Kelvin Source 接口HS_GATE_DRV / LS_GATE_DRV：栅极驱动输入接口RGH_CELL / RGL_CELL = 2.5Ω：门极串联电阻占位RGH_PD / RGL_PD = 10kΩ：Gate-Kelvin Source 下拉CDCELL_HF = 100nF / 1200V：输出单元高频母线旁路占位
检查结果：原理图接口网络已建立；当前报错主要是 PCB 尚未为新增模块接口放置/布线产生的 airwires，以及已有布局中的一个 overlapping copper。下一步应导入/创建 CI90N120SM4 四引脚器件 后，把这些接口替换为真实 MOSFET 符号并继续完善栅极驱动和保护。
备选方案 Microchip MSC025SMA120B4N怎么样
Thought for 33 sec
我会把 Microchip MSC025SMA120B4N 作为非国产备选来评估：重点核对耐压、电流、RDS(on)、Qg、Kelvin 源极、驱动电压和开关损耗，再判断是否适合作为临时原理图器件或最终备选。
Working for 2 days 17 hrs...
Thought for 6 sec
Reading MSC025SMA120B4N datasheet for absolute maximum ratings VDS VGS continu.
Reading MSC025SMA120B4N datasheet for electrical characteristics RDS on gate t.
Reading MSC025SMA120B4N datasheet for switching characteristics turn on energy.
Reading MSC025SMA120B4N datasheet for pin configuration package TO-247-4 Kelvi...
与外界的联系只有供电输入，信号输入输出
Pulling up the datasheet...
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HV Amplifier System Architecture
Confirmed Target
- Input power: 220 VAC mains
- Signal input: +/-10 V arbitrary waveform
- Output: +/-1000 V peak
- Load: 2.5 nF capacitive
- Frequency: 0 to 500 kHz
- Output current: >=10 A peak
- Slew-rate limit: 1.5 kV with adequate creepage and power dissipation
- Output current sensor/shunt/CT suitable for >=10 A peak and 500 kHz
- Overvoltage clamp and discharge/bleeder
- HV output connector and load connector
Open Design Decisions
- Number of cascaded output cells and per-cell DC bus voltage
- Whether waveform fidelity requires linear post-correction or pure high-rate PWM/multilevel synthesis is acceptable
- Required distortion/accuracy/settling error specification
- Isolation and safety compliance target
- Cooling method and maximum continuous operating duty cycle
Immediate Next Step
Search for candidate components, prioritizing China-made / China-supply-chain parts:
- 650 V or 1200 V SiC/GaN/MOSFET power devices
- isolated gate drivers
- isolated DC/DC supplies
- HV divider resistors/capacitors
- mains protection and rectification parts
- controller/ADC/DAC/FPGA or high-speed MCU parts
Confirmed Target
Key Electrical Consequences
Selected Preliminary Topology
Functional Blocks for Schematic
Block A — Mains Input and Protection
Block B — Control Power
Block C — Controller / Waveform Interface
Block D — Isolated Gate Drive
Block E — HV Output Power Stage
Block F — Output Measurement and Protection
Open Design Decisions
Immediate Next Step
