N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification

P-Channel 30 V 11A (Ta), 35A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UX) P-channel enhancement mode MOSFET designed for power switching and power management applications. It features a −30 V drain-source voltage (VDS) rating, −11 A continuous drain current (TA = +25°C), a maximum RDS(ON) of 12 mΩ at VGS = −10 V (21 mΩ at −4.5 V), and is housed in a PowerDI3333-8 (Type UX) package with an ESD-protected gate. #PChannelMOSFET #EnhancementModeMOSFET #30V #11A #LowRDSOn #PowerManagement #PowerSwitching #DCDCConverter #PowerDI33338 #DiodesIncorporated

Automotive H-Bridge DC Motor Driver IC – Fully integrated 40 V H-bridge motor driver with integrated power MOSFETs for brushed DC motors and one winding of a bipolar stepper motor. Operates from a 4 V to 40 V supply, delivers up to 5 A continuous output current, and features a PWM control interface with integrated current-sense output for motor monitoring. Includes an internal charge pump for high-side gate drive, low-RDS(on) MOSFETs, current regulation, undervoltage lockout (UVLO), overcurrent protection (OCP), thermal shutdown, and shoot-through protection. Qualified to AEC-Q100 Grade 1, operates over a −40°C to +125°C junction temperature range, and is housed in an 18-pin QFN (3 × 4 mm) wettable-flank package. #MonolithicPowerSystems #MPS #MPQ6612AGLEAEC1P #MPQ6612A #MotorDriver #HBridge #BrushedDCMotor #StepperMotor #CurrentSense #PWM #PowerMOSFET #AECQ100 #Automotive #EmbeddedSystems

Buck-Boost Switching Regulator IC Positive Adjustable (Fixed) 6.5V (11.5V) 1 Output 6A 22-PowerWFQFN The MAX25239/MAX25240 are small, synchronous, buck-boost converters with integrated H-bridge switches. These ICs provide a fixed-output regulation voltage and an externally adjustable output voltage in the 3V to 20V range with an input voltage above, below, or equal to the output regulation voltage. The ICs have typical 8.2A and 10A input current limit options and can support continuous load currents up to 6A depending on the input-to-output voltage ratio and operating frequency. It also has a wide input voltage range of 2V to 36V. The MAX25239/MAX25240 have three switching frequency options: 2.1MHz, 400kHz, and 200kHz. The 2.1MHz high switching frequency allows small external components and reduced output ripple, and guarantees no AM band interference, while the 400kHz or 200kHz switching frequency offers better efficiency and relieves the power consumption concern. The SYNC input allows three operation modes: skip mode with ultra-low quiescent current, forced fixed-frequency PWM operation, and synchronization to an external clock. The IC also includes spread-spectrum frequency modulation to minimize EMI interference. The MAX25239/MAX25240 feature a power-OK (POK) indicator, undervoltage lockout, overvoltage protection, cycle-by-cycle current limit, and thermal shutdown. The ICs are available in small, 4.25mm x 4.25mm x 0.75mm, 22-pin FC2QFN and 5.00mm x 5.00mm x 0.75mm, 18- pin FCQFN packages. Key Features Wide 2 V to 36 V input voltage range Synchronous buck-boost topology for seamless step-up and step-down conversion Delivers up to 6 A continuous output current Adjustable output voltage from 3 V to 20 V (device variant includes fixed output configuration options) High conversion efficiency with integrated low-RDS(ON) MOSFETs 400 kHz switching frequency with spread-spectrum option for reduced EMI Very low 95 µA quiescent current in standby and 10 µA shutdown current Integrated protection features including overvoltage, short-circuit, thermal shutdown, and undervoltage lockout (UVLO) Power-Good (PGOOD) output for power monitoring AEC-Q100 qualified for automotive applications Operating junction temperature range: −40°C to +150°C Compact 22-pin FC2QFN (4.25 × 4.25 mm) package #MAX25240AFFFVY #AnalogDevices #BuckBoostConverter #DCDCConverter #PowerManagement #AutomotiveElectronics #AECQ100 #SwitchingRegulator #EmbeddedSystems #AutomotivePower

N-Channel Power MOSFET – 40 V logic-level N-channel OptiMOS™ 6 power MOSFET optimized for high-efficiency synchronous buck converters, motor drives, battery-powered systems, and industrial power switching. Features a 40 V drain-to-source voltage (VDS), 100 A continuous drain current (TC = 25°C), 1.0 mΩ maximum RDS(on) at VGS = 10 V, and 1.4 mΩ maximum RDS(on) at VGS = 4.5 V. Includes logic-level gate drive, 67 nC typical gate charge, ±20 V gate-source voltage rating, 175°C maximum junction temperature, and 100% avalanche tested for enhanced ruggedness. Housed in an 8-pin PG-TDSON-8 (SuperSO8 5 × 6 mm) surface-mount package. #Infineon #BSC010N04LS6ATMA1 #BSC010N04LS6 #OptiMOS6 #PowerMOSFET #NChannelMOSFET #40V #LogicLevelMOSFET #LowRDSOn #SynchronousBuck #MotorDrive #PowerManagement #EmbeddedSystems

P-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC The SQ4435EY-T1_GE3 is an automotive-grade P-Channel enhancement-mode TrenchFET® power MOSFET from Vishay Siliconix. It is designed for efficient high-side load switching and power management applications, offering low on-resistance, fast switching performance, and excellent thermal reliability. Qualified to AEC-Q101, this MOSFET is suitable for demanding automotive and industrial environments. It is housed in a compact SO-8 surface-mount package, making it ideal for space-constrained designs. Key Features P-Channel enhancement-mode TrenchFET® MOSFET 30 V drain-to-source voltage (VDS) 15 A continuous drain current (TC = 25°C) Low RDS(on): 18 mΩ max @ VGS = -10 V 31 mΩ max @ VGS = -4.5 V AEC-Q101 qualified for automotive applications Operating junction temperature: -55°C to +175°C Low conduction losses for improved power efficiency Fast switching characteristics 100% Rg and UIS tested RoHS compliant and halogen-free Compact SO-8 surface-mount package Typical Applications Automotive high-side load switches Battery management systems (BMS) DC-DC converters Power distribution switches Motor control circuits Industrial power management Reverse battery protection #Vishay #SQ4435EY #PChannelMOSFET #TrenchFET #PowerMOSFET #Automotive #AECQ101 #HighSideSwitch #PowerManagement #DCDC #BatteryManagement #SO8 #IndustrialElectronics #LowRDSon #SurfaceMount

N-Channel 60 V 34.5A (Ta), 85A (Tc) 6.2W (Ta), 78W (Tc) Surface Mount 8-DFN (5x6) N-channel power MOSFET for high-frequency switching and synchronous rectification, rated for 60 V drain-to-source voltage and 85 A continuous drain current (at VGS = 10 V, TC = 25°C). Features a maximum RDS(on) of 2.9 mΩ at VGS = 10 V and 4.1 mΩ at VGS = 4.5 V, utilizes AlphaSGT™ trench technology, supports logic-level drive, and is housed in an 8-pin DFN 5×6 package. #N-ChannelMOSFET #PowerMOSFET #60V #85A #LowRDSon #LogicLevel #DFN5x6 #AlphaOmegaSemiconductor

P-Channel 30V 15A (Ta), 70A (Tc) 2.5W (Ta), 90W (Tc) Surface Mount TO-252 (DPAK) P-channel enhancement-mode MOSFET designed for power switching applications, featuring a −30 V drain-source voltage, −70 A continuous drain current (at V_GS = −20 V, T_C = 25°C), and a maximum R_DS(on) of 6.2 mΩ at V_GS = −20 V (8 mΩ max at −10 V). The device uses advanced trench technology and is specified with ±25 V gate-source voltage, 100% UIS testing, and 100% gate resistance (R_g) testing. #Commonpartslibrary #Transistor #P-Channel #MOSFET #PowerMOSFET #30V #HighCurrent #LowRDSon