Multiphase Motor Driver NMOS PWM, SPI 24-WQFN (3x3) Three-phase PWM motor driver designed to drive three-phase brushless DC motors using three integrated MOSFET half-bridges. The DRV8311P operates from 3–20 V, supports up to 5-A peak output current and 200-kHz PWM frequency, and provides a 10-MHz SPI/tSPI interface, integrated current sensing, and a 3.3-V, 100-mA LDO regulator in a 24-pin 3 × 3-mm WQFN package. #MotorDriver #BLDC #PWM #SPI #TexasInstruments

The TPS61187, manufactured by Texas Instruments, is a high-efficiency, white-light-emitting-diode (WLED) driver specifically designed for notebook LCD backlight applications. This component can manage an input voltage range of 4.5 V to 24 V and supports a maximum output voltage of 38 V. It is distinguished by its integrated 2-A, 40-V power MOSFET and the capacity to drive up to 60 WLEDs arranged in six channels, with each channel capable of supporting a maximum current of 30 mA. The TPS61187 ensures high precision in current regulation and matching across all channels. Notably, the device offers versatile dimming capabilities through both automatic phase-shift and direct-PWM dimming methods, accommodating a wide PWM dimming frequency range from 100 Hz to 50 kHz in Direct PWM mode and 100 Hz to 22 kHz in Frequency Programmable mode. The boost output automatically adjusts to the WLED forward voltages to enhance efficiency. Additionally, the TPS61187 features programmable switching frequency between 300 kHz and 1 MHz, overvoltage protection, thermal shutdown, and built-in protection against open or short circuits on the WLED string. Available in a 20-pin WQFN package with a nominal body size of 4.00 mm x 4.00 mm, the TPS61187 offers a compact solution for driving notebook backlighting, providing engineers with a flexible and efficient option for their designs.

Dual-channel H-bridge motor driver The DRV8833PWR is a dual H-bridge motor driver IC from Texas Instruments designed for driving small DC motors, stepper motors, solenoids, and other inductive loads in low-voltage battery-powered systems. It integrates two full H-bridge outputs that allow independent or combined control of two motors or one bipolar stepper motor. It is commonly used in robotics, toys, printers, and embedded motion-control applications due to its compact size and built-in protection features. Key Features Dual H-Bridge Motor Driver Drives 2 DC motors independently or 1 bipolar stepper motor Wide Supply Voltage Range Operates from 2.7 V to 10.8 V motor supply (VM) Output Current Capability Up to 2 A peak per H-bridge (package-dependent RMS limits apply) Supports parallel operation for higher current drive Low On-Resistance MOSFET Output Stage Reduces power loss and improves efficiency in battery-powered designs PWM Current Regulation Built-in current limiting and chopping control for better motor performance Multiple Control Modes Forward, reverse, brake, and coast control via simple logic inputs Protection Features Overcurrent protection Short-circuit protection Undervoltage lockout (UVLO) Thermal shutdown Low-Power Sleep Mode Reduces standby current for battery applications Compact Package 16-pin TSSOP (PW package), optimized for space-constrained PCB designs #CommonPartsLibrary #IntegratedCircuit #PowerManagement

Three-phase smart gate driver for driving three high-side and three low-side N-channel MOSFETs in motor-control applications. It operates from 6 to 60 V, provides 10 mA to 1 A peak source and 20 mA to 2 A peak sink gate-drive current, supports 1x, 3x, 6x, and independent PWM modes with 1.8 V, 3.3 V, and 5 V logic inputs, and is housed in a 32-pin WQFN package. #GateDriver #MotorControl #ThreePhase #MOSFET #TI

CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 34 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Potential applications • General purpose drives (GPD) • EV Charging • Online UPS/Industrial UPS • Solar power optimizer • String inverter • Energy Storage Systems (ESS) • Welding #CommonPartsLibrary #Transistor #FET #Mosfet #CoolSiC™ G2 IMZC120R040M2H

The NCP4304A and NCP4304B, manufactured by ON Semiconductor, are advanced controllers and drivers designed to optimize synchronous rectification in high-efficiency switch mode power supplies (SMPS). These versatile components are suitable for various topologies, including flyback, forward, and half-bridge resonant LLC converters. Featuring an externally adjustable minimum on and off times, the NCP4304A/B effectively mitigates ringing caused by PCB layout and parasitic elements, ensuring reliable and noise-free operation. The components boast an extremely low turn-off delay time of typically 40 ns, high sink current capability, and an automatic package parasitic inductance compensation system, which together maximize the conduction time of the synchronous rectification MOSFET, thereby enhancing SMPS efficiency. The NCP4304A offers a gate drive clamp of 12 V, while the NCP4304B provides a 6 V clamp, facilitating implementation in 24 V output applications. Key features include precise secondary zero current detection with an adjustable threshold, a maximum operating frequency of 500 kHz, and a low startup and standby current consumption. The devices are available in SOIC-8 and DFN8 packages, making them suitable for high power density AC/DC power supplies, notebook adapters, gaming consoles, and other applications demanding high efficiency.

MOSFET N-CH 20V 3.6A SOT-23 The IRLML2502 is a small-signal N-channel enhancement mode power MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used as a load switch or power control transistor in compact electronic systems such as battery-powered devices, LED drivers, and DC-DC converters. It features a low on-resistance (RDS(on)), which allows it to switch higher currents with minimal power loss and heat generation. The device is optimized for logic-level gate drive, meaning it can be driven directly from microcontrollers (like 3.3 V or 5 V systems). It is packaged in a compact SOT-23 (Micro3) surface-mount package, making it suitable for space-constrained PCB designs. Key Features N-channel enhancement mode MOSFET Drain-source voltage (VDS) up to 20 V Continuous drain current up to ~4.2 A (at 25°C) Very low RDS(on) ≈ 45 mΩ @ VGS = 4.5 V Logic-level gate drive capability (works with 2.5–4.5 V signals) Fast switching performance Compact SOT-23 (Micro3) surface-mount package Low gate charge for efficient switching Suitable for battery-powered and low-voltage applications RoHS compliant, lead-free design #IRLML2502 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LogicLevelMOSFET #PowerSwitch #ElectronicComponents #EmbeddedSystems #PCBDesign

MOSFET N-CH 20V 6.3A SOT-23 The IRLML6244TRPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies (originally International Rectifier HEXFET series). It is designed for low-voltage power switching applications such as load switching, DC-DC converters, and LED control. It comes in a compact SOT-23 (Micro3™) surface-mount package, making it suitable for space-constrained PCB designs while still handling relatively high current for its size. Key Features Drain-Source Voltage (VDS): 20 V Continuous Drain Current: up to ~6.3 A (at 25°C) Very low RDS(on): ~21 mΩ @ VGS = 4.5 V ~27 mΩ @ VGS = 2.5 V Low gate threshold voltage (~0.5–1.1 V typical range) (note: not a switching guarantee) Gate-to-source voltage rating: ±12 V Low power loss due to low on-resistance High efficiency switching for low-voltage systems Power dissipation: ~1.3 W (thermal limited in SOT-23 package) Fast switching performance (low gate charge ~8.9 nC) Operating temperature range: −55°C to +150°C RoHS compliant (lead-free, halogen-free) Typical Applications Low-side load switching (MCUs, GPIO control) LED strip / RGB LED drivers Battery-powered systems DC-DC converter switching Small motor or relay driving General-purpose power management in compact electronics Important Design Note Even though it has a low VGS(th), this MOSFET is not selected based on threshold voltage. What matters is the RDS(on) at your gate drive voltage (2.5 V / 3.3 V / 5 V) to ensure it fully turns on with minimal heating. #CommonPartsLibrary #Transistor #FET #IRLML6244 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #Infineon #HEXFET #LEDDriver #LowSideSwitch #ElectronicsComponents

Very Simple N Channel Low Side FET Switch for a Solenoid Device. 5A MOSFET and 1A Flyback Diode.