Automotive 1.5-V to 5.5-V, 1.5-A, 0.5-µA IQ ideal diode with integrated FET The LM66100-Q1 is a Single-Input, Single-Output (SISO) integrated ideal diode that is well suited for a variety of applications. The device contains a Pchannel MOSFET that can operate over an input voltage range of 1.5 V to 5.5 V and can support a maximum continuous current of 1.5 A. The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher than VIN, the device disables and the MOSFET is off. When the CE pin voltage is lower, the MOSFET is on. The LM66100-Q1 also comes with reverse polarity protection (RPP) that can protect the device from a miswired input, such as a reversed battery. Two LM66100-Q1 devices can be used in an ORing configuration similar to a dual diode ORing implementation. In this configuration, the devices pass the highest input voltage to the output while blocking reverse current flow into the input supplies. These devices can compare input and output voltages to make sure that reverse current is blocked through an internal voltage comparator. The LM66100-Q1 is available in a standard SC-70 package characterized for operation over a junction temperature range of –40°C to 150°C. 1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to 125°C ambient operating temperature range • Wide operating voltage range: 1.5 V–5.5 V • Reverse voltage standoff on VIN: –6-V absolute maximum • Maximum continuous current (IMAX): 1.5 A • On-Resistance (RON): – 5-V VIN = 79 mΩ (typical) – 3.6-V VIN = 91 mΩ (typical) – 1.8-V VIN = 141 mΩ (typical) • Comparator chip enable (CE) • Channel status indication (ST) • Low current consumption: – 3.6-V VIN shutdown current (ISD,VIN): 120 nA (typical) – 3.6-V VIN quiescent current (IQ, VIN): 150 nA (typical)

Low supply current makes the MAX803/MAX809/MAX810 ideal for use in portable equipment. The MAX803 is available in a 3-pin SC70 package, and the MAX809/MAX810 are available in 3-pin SC70 or SOT23 packages. #integrated-circuit #microprocessor

Shunt Regulator, SC-70 #ReferenceVoltaget #commonpartslibrary

3.000V Precision Micropower Shunt Voltage Reference, SC-70 #ReferenceVoltaget #commonpartslibrary

2.048V Precision Micropower Shunt Voltage Reference, SC-70 #ReferenceVoltaget #commonpartslibrary

SPST Analog Switch, 1.08V to 5.5V Supply, 3pA Leakage Current, Normally OFF, 1.8Ohm Ron, SC-70 Analog Switch SPST *SC?70*

400 mA Step-Up Converter, Adjustable Output Voltage, 0.7-5.5V Input Voltage, SC-70 Boost adjustable converter Texas*R*PDSO*G6*

Single-Bit Dual-Supply Bus Transceiver With Configurable Voltage Translation and 3-State Outputs, SOT-363 Level-Shifter CMOS-TTL-Translation *SC?70*

SOT65P210X110-5N https://www.arrow.com/en/products/sn74ahc1g32dckre4/texas-instruments OR Gate 1-Element 2-IN CMOS 5-Pin SC-70 T/R 1.1 595-74AHC1G32DCKRE4 https://www.mouser.co.uk/ProductDetail/Texas-Instruments/SN74AHC1G32DCKRE4?qs=fSCvMSq5ISXKX2gb0IHBGA%3D%3D Texas Instruments SN74AHC1G32DCKRE4

Current-Shunt Monitor, Voltage Output, Bi-Directional Zero-Drift, 200V/V Gain, SC-70-6 Current shunt monitor *SC?70*

Analog thermistor temperature sensor, ±2.5C accuracy, -55C to +130C, SC-70-5 temperature sensor thermistor *SC?70*

1 MHz, Low-Power Op Amp, SC-70-5 single opamp *SC?70*

10 pA, Ultra Low Leakage and Quiescent Current, Load Switch with Reverse Blocking, Low Enable, SC-70-6 Load switch *SC?70*

INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor, SOT-363, SC-70 current monitor shunt sensor bidirectional *SC?70*

Shunt Regulator, SC-70 diode device shunt regulator *SC?70*

Low-Cost 128-Step Volatile I2C Digital Potentiometer, SC-70-5 TWI pot rheostat *SC?70*

8-Bit, Single-Channel, Voltage Output, Serial Interface Digital-to-Analog Converters, SC-70 DAC SPI 1-channel SOT?363*

14.5V (Typ) Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount SC-70-6 The TPD4E1B06DCKR is a four-channel transient voltage suppression and electrostatic discharge protection device manufactured by Texas Instruments. This integrated protection component is designed to safeguard sensitive electronic interfaces and signal lines from electrostatic discharge events, transient overvoltage conditions, and electrical fast transients commonly encountered in portable and high-speed electronic systems. The device features low capacitance characteristics that make it suitable for protecting high-speed communication interfaces while maintaining signal integrity. It is commonly used in USB interfaces, HDMI ports, communication systems, embedded electronics, consumer devices, and industrial control equipment. The TPD4E1B06DCKR provides robust ESD protection while occupying minimal PCB space due to its compact surface-mount package. Its multi-channel architecture simplifies circuit design by integrating multiple protection lines within a single package, reducing component count and improving overall system reliability in environments exposed to static discharge and transient electrical disturbances. Engineering Specification Device Type Multi-channel ESD and transient protection diode array Protection Configuration Four-channel transient voltage suppression architecture Protection Function Electrostatic discharge protection and transient suppression Interface Compatibility Suitable for high-speed signal and communication interfaces Capacitance Characteristics Low capacitance design for signal integrity preservation Response Characteristics Fast transient response for sensitive electronic protection Signal Integrity Optimized for minimal impact on high-speed data transmission Voltage Protection Clamps transient overvoltage conditions to safe operating levels Package Type SC70 surface-mount package Mounting Style Surface mount technology Reliability Features Robust ESD tolerance and transient immunity enhancement Applications USB interface protection Communication ports Embedded systems Consumer electronics Industrial electronics Portable devices Signal line protection Data interface protection High-speed digital systems I/O port protection Manufacturer Texas Instruments #commonpartslibrary #esdprotection #transientprotection #tvsdiode #signalprotection #texasinstruments #highspeedinterfaces #embeddedhardware #surfaceountcomponents #electronicsdesign #usbprotection #industrialelectronics #communicationinterfaces #circuitprotection #powerelectronics

OR Controller P-Channel 1:1 SC-70-6 The LM66100DCKR is an ideal diode and power path management device manufactured by Texas Instruments. This integrated circuit is designed to provide low-loss reverse polarity protection and automatic power path control for low-voltage DC power systems. By utilizing an integrated low-resistance MOSFET architecture, the device significantly reduces forward voltage drop and power dissipation compared to conventional Schottky diodes. The device supports automatic source selection, reverse current blocking, and efficient power OR-ing functionality, making it suitable for battery-powered devices, USB-powered electronics, industrial embedded systems, portable equipment, and redundant power supply architectures. Its ultra-low forward voltage characteristics improve overall system efficiency and help extend battery operating life in portable applications. The LM66100DCKR is optimized for compact embedded designs requiring efficient power routing, input protection, and seamless power source switching while minimizing thermal losses and PCB footprint requirements. Engineering Specification Device Type Ideal diode and power path protection IC Power Management Function Reverse current blocking and automatic power path control Switching Technology Integrated low-resistance MOSFET architecture Reverse Protection Reverse polarity and reverse current protection Forward Voltage Characteristics Ultra-low forward voltage drop for high-efficiency operation Power Path Features Automatic source selection and power OR-ing support Efficiency Characteristics Reduced conduction loss compared to conventional diode solutions Input Characteristics Designed for low-voltage DC power rail operation Thermal Characteristics Low thermal dissipation due to efficient MOSFET conduction Protection Features Reverse current blocking Reverse polarity protection Power path isolation Fault-tolerant operation Package Type SC70 surface-mount package Mounting Style Surface mount technology Applications Battery-powered electronics USB-powered systems Power multiplexing Portable devices Embedded systems Industrial electronics Redundant power supplies Power OR-ing circuits IoT hardware Low-power electronic systems Manufacturer Texas Instruments #commonpartslibrary #idealdiode #powermanagement #reversepolarityprotection #powerpathcontroller #texasinstruments #powerelectronics #embeddedhardware #portableelectronics #surfaceountcomponents #electronicsdesign #powersupply #usbpower #batterypowered #industrialelectronics

N-Channel Power MOSFET – 30 V N-channel enhancement-mode MOSFET optimized for load switching, DC-DC converters, battery-powered devices, power management, motor control, and embedded switching applications. Features a 30 V drain-to-source voltage (VDS), 2 A continuous drain current, and 165 mΩ maximum RDS(on) at VGS = 4.5 V, with 1.8 V logic-level gate drive compatibility for low-voltage microcontroller interfaces. Offers 1.7 nC typical gate charge, 130 pF typical input capacitance, ultra-fast switching performance, and an integrated body diode for efficient power conversion. Rated for ±12 V gate-to-source voltage, 800 mW power dissipation, 150°C maximum junction temperature, and housed in a 3-pin MCPH3 (SC-70 / SOT-323) surface-mount package. This device is obsolete / not recommended for new designs. #onsemi #MCH3478TLH #MCH3478 #NChannelMOSFET #LogicLevelMOSFET #PowerMOSFET #LoadSwitch #DCDCConverter #PowerManagement #MotorDriver #SOT323 #EmbeddedSystems

Precision Temperature Sensor, Accuracy at 30°C ±1.5°C to ±4°C Maximum, SC70 temperature sensor thermistor SOT?353*