FS8205A dual N-channel enhancement mode MOSFET, 20V drain-source voltage, 6A drain current, low RDS(on) 22.5mΩ at VGS=4.5V and 27mΩ at VGS=2.5V, low gate charge, ±12V gate-source voltage, 26A pulsed drain current, 2W power dissipation, suitable for battery protection, load switch and power management applications, SOT-23-6L surface mount package.

20V 6A 19.5mΩ@4.5V 3A 1.5W 2 N-Channel SOT-23-6 MOSFETs ROHS #CommonPartsLibrary #IntegratedCircuit #PowerManagement

20V 6A 19.5mΩ@4.5V,3A 1.5W 2 N-Channel SOT-23-6 MOSFETs ROHS #CommonPartsLibrary #IntegratedCircuit #PowerManagement