N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification

N-Channel Power MOSFET – 40 V logic-level N-channel OptiMOS™ 6 power MOSFET optimized for high-efficiency synchronous buck converters, motor drives, battery-powered systems, and industrial power switching. Features a 40 V drain-to-source voltage (VDS), 100 A continuous drain current (TC = 25°C), 1.0 mΩ maximum RDS(on) at VGS = 10 V, and 1.4 mΩ maximum RDS(on) at VGS = 4.5 V. Includes logic-level gate drive, 67 nC typical gate charge, ±20 V gate-source voltage rating, 175°C maximum junction temperature, and 100% avalanche tested for enhanced ruggedness. Housed in an 8-pin PG-TDSON-8 (SuperSO8 5 × 6 mm) surface-mount package. #Infineon #BSC010N04LS6ATMA1 #BSC010N04LS6 #OptiMOS6 #PowerMOSFET #NChannelMOSFET #40V #LogicLevelMOSFET #LowRDSOn #SynchronousBuck #MotorDrive #PowerManagement #EmbeddedSystems

Single-channel high-side N-channel smart power switch for power distribution, supporting a 6 V to 18 V load voltage and up to 11 A continuous output current. Features 8.8 mΩ typical ON resistance, non-inverting ON/OFF control, and integrated overcurrent, overvoltage, short-circuit, and undervoltage lockout (UVLO) protection. Specified for operation over a −40°C to +150°C junction temperature range and housed in a PG-TSDSO-14-22 (14-pin TSSOP exposed pad) package. #Infineon #BTS70081EPPXUMA1 #SmartPowerSwitch #HighSideSwitch #LoadSwitch #PowerDistribution #PROFET #NChannel #11A #PowerManagement #AutomotiveElectronics #TSDSO14

Power Switch/Driver 1:1 N-Channel 2A PG-TSDSO-14 BTG7090-2EPL High-side power switch designed to provide protected high-side load switching with diagnostic functions for automotive power distribution applications. It features two independent 2 A channels, operates from a 3 V to 28 V supply range, offers 90 mΩ typical RDS(on), adjustable overcurrent limitation up to 4.34 A, analog current sense, digital diagnostics, capacitive load switching mode, and is housed in a PG-TSDSO-14 package. #HighSideSwitch #SmartPowerSwitch #PROFET #LoadSwitch #AutomotiveElectronics #PowerDistribution #DualChannel #CurrentSense #Diagnostics #PGTSDSO14 #Infineon

Ultra-Low Noise Digital MEMS Microphone with PDM Output – High-performance omnidirectional MEMS microphone designed for voice assistants, smart speakers, conferencing systems, industrial voice interfaces, IoT devices, wearables, automotive applications, and embedded audio systems. Part of the Infineon XENSIV™ microphone family, it features a digital PDM output, 73 dB(A) signal-to-noise ratio (SNR), −26 dBFS sensitivity (±1 dB @ 94 dB SPL), and an acoustic overload point (AOP) of 122 dB SPL, delivering excellent speech intelligibility and high dynamic range. Operates from a 1.62 V to 3.6 V supply with 980 µA typical current consumption, supports a 20 Hz to 19 kHz frequency response, and includes multiple operating modes for power optimization. Features a bottom-port acoustic design, IP57 dust and water resistance, and AEC-Q103 qualification (on demand) for demanding environments. Housed in a compact 5-pad LLGA package (4.0 × 3.0 × 1.2 mm) and specified for operation over a −40°C to +85°C temperature range. #Infineon #IM73D122V01XTMA1 #XENSIV #MEMSMicrophone #DigitalMicrophone #PDM #VoiceInterface #SmartSpeaker #IoT #AudioProcessing #AECQ103 #EmbeddedSystems

CY15B102Q-SXE is an Infineon 2 Mbit (256 K × 8) automotive nonvolatile F-RAM with a 25 MHz SPI interface, 2.0–3.6 V operation, high write endurance, and an 8-pin SOIC package. Keywords: CY15B102Q-SXE, SPI F-RAM, 2Mbit memory, automotive memory, SOIC-8

N-channel power MOSFET, 40 V, 160 A, PG-TO263-7, OptiMOS 6 Infineon Technologies IPB160N04S4H1ATMA1

MOSFET N-CH 20V 6.3A SOT-23 The IRLML6244TRPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies (originally International Rectifier HEXFET series). It is designed for low-voltage power switching applications such as load switching, DC-DC converters, and LED control. It comes in a compact SOT-23 (Micro3™) surface-mount package, making it suitable for space-constrained PCB designs while still handling relatively high current for its size. Key Features Drain-Source Voltage (VDS): 20 V Continuous Drain Current: up to ~6.3 A (at 25°C) Very low RDS(on): ~21 mΩ @ VGS = 4.5 V ~27 mΩ @ VGS = 2.5 V Low gate threshold voltage (~0.5–1.1 V typical range) (note: not a switching guarantee) Gate-to-source voltage rating: ±12 V Low power loss due to low on-resistance High efficiency switching for low-voltage systems Power dissipation: ~1.3 W (thermal limited in SOT-23 package) Fast switching performance (low gate charge ~8.9 nC) Operating temperature range: −55°C to +150°C RoHS compliant (lead-free, halogen-free) Typical Applications Low-side load switching (MCUs, GPIO control) LED strip / RGB LED drivers Battery-powered systems DC-DC converter switching Small motor or relay driving General-purpose power management in compact electronics Important Design Note Even though it has a low VGS(th), this MOSFET is not selected based on threshold voltage. What matters is the RDS(on) at your gate drive voltage (2.5 V / 3.3 V / 5 V) to ensure it fully turns on with minimal heating. #CommonPartsLibrary #Transistor #FET #IRLML6244 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #Infineon #HEXFET #LEDDriver #LowSideSwitch #ElectronicsComponents