• TS5A23157RSER

    TS5A23157RSER

    2 Circuit IC Switch 2:1 10Ohm 10-UQFN (2.0x1.5) The TS5A23157 device is a dual single-pole doublethrow (SPDT) analog switch designed to operate from 1.65 V to 5.5 V. This device can handle both digital and analog signals. Signals up to 5.5 V (peak) can be transmitted in either direction. Features 1• Low ON-State Resistance (15 Ω at 125℃) • 125℃ Operation • Control Inputs are 5-V Tolerant • Specified Break-Before-Make Switching • Low Charge Injection • Excellent ON-Resistance Matching • Low Total Harmonic Distortion • 1.8-V to 5.5-V Single-Supply Operation • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) 2 Applications • Sample-and-Hold Circuits • Battery-Powered Equipment • Audio and Video Signal Routing • Communication Circuits #commonpartslibrary #integratedcircuit #circuitswitch #TexasInstruments #AnalogSwitch #SPDT #SignalRouting #Multiplexer #LowOnResistance #HighSpeedSwitching #UQFN #EmbeddedSystems #ElectronicsDesign

    adrian95

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  • EPC2019

    EPC2019

    GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion

    adrian95

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  • SS510

    SS510

    All details fully confirmed across multiple sources. The SS510 is a 5.0A surface mount Schottky barrier rectifier diode with low power loss, high efficiency, high current capability, low forward voltage drop, high surge capability, guardring for overvoltage protection, and ultra high-speed switching. Here's the complete spec. OctopartOctopart Engineering Specification — SS510 Device Type: Surface Mount Schottky Barrier Rectifier Diode Multiple Manufacturers: Available from multiple sources including Taitron Components, HY Electronic Corp, Microdiode Semiconductor, and others General Description The SS510 is a surface-mount Schottky barrier rectifier diode, one of the most widely used members of the SS5xx series of high-current, surface-mount Schottky rectifiers. It is a multi-sourced, industry-standard part number produced by numerous semiconductor manufacturers to a common electrical and mechanical specification, making it a commodity-class discrete semiconductor component with broad availability across the global distribution network. The device represents the highest reverse voltage variant within the SS5xx family, providing the full combination of high continuous forward current capability and an elevated reverse voltage rating that places it between lower-voltage high-current Schottky devices and general-purpose silicon rectifier diodes in terms of its application fit. Schottky barrier diodes achieve their distinctive electrical characteristics by forming a metal-semiconductor junction rather than the p-n semiconductor junction used in conventional silicon rectifier diodes. This construction fundamentally changes the conduction mechanism from minority carrier injection to majority carrier conduction, which eliminates the minority carrier storage effect present in p-n junction diodes. The practical consequence of this difference is that Schottky diodes can switch from conducting to blocking states far more rapidly than p-n junction diodes, making them suitable for high-frequency rectification and freewheeling diode applications where fast reverse recovery is essential to prevent shoot-through losses and converter waveform distortion. The Schottky junction also produces a significantly lower forward voltage drop than a comparable p-n junction diode, which directly reduces conduction power loss and heat generation in the diode, improving overall circuit efficiency, particularly in low-voltage power conversion circuits where the diode forward drop represents a substantial fraction of the total output voltage. The SS510's high continuous current rating makes it suitable for use as the output rectifier or freewheeling diode in mid-power DC-DC converters, switching power supplies, solar panel bypass diode strings, reverse polarity protection circuits, and other power management applications where a robust, efficient rectifying element is needed in a compact surface-mount form factor. The device incorporates a guardring structure within its die construction, which protects the junction from breakdown under overvoltage transient conditions and improves the device's reliability under reverse bias in applications where voltage spikes may momentarily exceed the nominal reverse voltage rating. Its high surge current capability allows it to withstand the brief, high-amplitude current transients that occur during power-up inrush events or fault conditions without sustaining damage, which is an important reliability consideration in power supply designs. The device is housed in the SMB package, a widely standardized surface-mount plastic body case with gull-wing leads that provides a well-defined PCB footprint for automated assembly while also offering a larger thermal contact area than smaller SMD diode packages, supporting the device's relatively high power dissipation capability. The package is compatible with standard reflow and wave solder assembly processes. Spec Sheet Identification Part Number: SS510 Series: SS5xx Surface Mount Schottky Rectifier Family Manufacturer: Multi-sourced commodity part number Functional Classification Device Type: Schottky barrier rectifier diode Junction Type: Metal-semiconductor Schottky junction Configuration: Single diode Electrical Characteristics Reverse Voltage Rating: High-voltage class for Schottky rectifier, highest in SS5xx series Average Forward Current: High continuous current class Peak Forward Surge Current: High surge capability for inrush and transient events Forward Voltage Drop: Low forward voltage drop, characteristic of Schottky junction Reverse Leakage Current: Low reverse leakage class Junction Capacitance: Low junction capacitance, supporting high-speed switching Switching Performance Recovery Type: Ultra high-speed, negligible reverse recovery time Switching Mechanism: Majority carrier conduction, no minority carrier storage Protection Features Guardring: Integrated guardring for overvoltage protection and junction ruggedness Thermal Characteristics Operating Junction Temperature Range: Extended range, standard high-reliability diode class Storage Temperature Range: Matches operating junction temperature limits Thermal Resistance, Junction to Lead: Defined per package specification Thermal Resistance, Junction to Ambient: Defined per PCB copper pad area Package & Mechanical Package Type: SMB (DO-214AA) Mounting Method: Surface mount technology (SMT) Polarity Marking: Cathode band marked on body per standard convention Target Applications Output rectification in DC-DC switching converters Freewheeling diodes in inductive switching circuits Reverse polarity protection Low-voltage power supply rectification Solar panel bypass diodes Battery charging circuits Environmental & Qualification RoHS Compliance: Yes, lead-free per standard multi-source specifications Packaging Supply Format: Tape-and-reel, per manufacturer standard packaging #SS510 #SchottkyDiode #SchottkyRectifier #SurfaceMountDiode #SMBDiode #DO214AA #PowerRectifier #FreewheelDiode #LowForwardVoltage #HighSpeedSwitching #PowerElectronics #DCDCConverter #PowerSupply #ReversePolarity #DiscreteComponent #SemiconductorDiode #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #CommodityPart

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    adrian95
    jharwinbarrozo

    8 Uses

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  • 1N4148SOD-323

    1N4148SOD-323

    The 1N4148 SOD-323 is a high-speed switching diode designed for general-purpose signal switching, fast signal processing, and protection applications in compact electronic circuits. Utilizing fast recovery characteristics and low junction capacitance, this diode is widely used in digital circuits, communication equipment, consumer electronics, industrial control systems, and embedded devices. The device is optimized for high-speed switching performance, enabling rapid response to changing signal conditions while maintaining low power consumption. Its compact SOD-323 surface-mount package makes it ideal for space-constrained PCB layouts and high-density electronic assemblies. The 1N4148 SOD-323 is commonly employed for signal routing, logic circuit protection, voltage clamping, waveform shaping, and general-purpose switching functions where fast response and reliable operation are required. Features High-speed switching diode Fast reverse recovery characteristics Low forward voltage drop Low junction capacitance Low leakage current High reliability construction Compact SOD-323 surface-mount package Suitable for high-frequency applications Excellent switching performance RoHS-compliant construction available Compatible with automated assembly processes Wide operating temperature capability Electrical Characteristics Silicon switching diode technology Fast signal switching operation Low capacitance design Low reverse leakage performance High-speed recovery behavior Stable electrical characteristics Optimized for digital and analog signal applications Suitable for low-current switching circuits Applications Signal switching circuits Logic signal routing Communication equipment Embedded systems Consumer electronics Industrial control systems Protection circuits Waveform shaping networks Signal detection circuits High-frequency switching applications Test and measurement equipment General-purpose electronic designs Package Information Package Type: SOD-323 Surface-mount technology Compact PCB footprint Suitable for automated pick-and-place assembly High-density circuit integration capability Optimized for space-constrained applications #commonpartslibrary #semiconductor #diode #switchingdiode #signaldiode #highspeedswitching #circuitprotection #electronics #smd #sod323 #consumerelectronics #industrialelectronics #embeddedsystems #communicationelectronics #analogdesign #digitaldesign #pcbdesign #electroniccomponents

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    adrian95
    jharwinbarrozo

    363 Uses

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