Part Information Review and Update

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Part Review Summary
I reviewed the current part project against the datasheet-driven part-sync checklist and checked the existing project metadata, schematic terminals, and footprint pads.
What I found Metadata status

Table

ItemCurrent projectDatasheetResult
MPNTC58NVG1S3HBAI6TC58NVG1S3HBAI6Match
ManufacturerToshibaToshibaMatch
DescriptionNAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM)3.3 V, 2 Gbit CMOS NAND E2PROMEssentially match
Datasheet URLAlready presentOfficial Toshiba PDF located in project propertyNo web search/update needed
Part TypeIntegrated CircuitsNAND flash memoryAcceptable but generic
Designator PrefixICIC-style partAcceptable
Package / case codeNot presentP-VFBGA67-0608-0.80-001Missing property
Pin count67 terminals67-ball packageMatch
Footprint pads67 pads67-ball packageMatch by count
Key datasheet specs

Table

SpecValue
Device type3.3 V CMOS NAND flash memory
Density2 Gbit
Organization256M x 8
Interface widthx8
Page size2176 bytes total = 2048 + 128
Block size128K + 8K bytes
Valid blocks2008 min, 2048 max
Supply voltage2.7 V to 3.6 V
Operating temperature-40 C to 85 C
Read current30 mA max
Program current30 mA max
Erase current30 mA max
Standby current50 uA max
Access timing25 us array-to-register, 25 ns serial read cycle min
ECC note8-bit ECC per 512 bytes required
Symbol and pin audit Good
  • The project has 67 terminal components, which matches the 67-ball package requirement.
  • The footprint also contains 67 pads, so the package ball count is consistent.
  • The active signal names present in the symbol align with the datasheet signal set:
    • WP, ALE, VSS, CE, WE, RY/BY, RE, CLE
    • I/O1 to I/O8
    • VCC
Issues / mismatches flagged

Table

AreaFindingSeverity
Pin metadataEvery terminal I checked has Pin Type = UnspecifiedHigh
Pin descriptionsNo Pin Description properties are populatedHigh
Symbol organizationNo Section, Pin Group, or Sub-symbol Designator Suffix properties are populatedMedium
Package metadataPackage or Case Code property is missingMedium
Naming styleProject uses labels like VCC_1, VCC_2, VSS_1, VSS_2, VSS_3, which is workable, but the underlying semantic pin metadata is still missingMedium
Footprint verification depthI could confirm pad count, but not full mechanical ball pitch / land geometry from the current layout data aloneMedium
Important note on pin-map verification
The datasheet extraction for the BGA ball table is partially ambiguous in text form, but it clearly identifies the active balls and confirms this is a 67-ball package. Your project’s 67 terminals + 67 pads is the strongest structural sign that the footprint and symbol were built from the correct package basis. The larger problem is not ball count mismatch - it is that the pin semantics were never filled in. The audit criteria for exact pin-count matching and datasheet-as-source-of-truth come straight from the recommended workflow .
Bottom line Overall assessment
  • MPN / manufacturer / basic description: good
  • Datasheet URL: already set, so no update was needed
  • Package family and pin count: look consistent with the datasheet
  • Main problem: the part is incomplete as a reusable library part because the terminals lack proper metadata
Highest-priority fixes
  1. Add Package or Case Code = P-VFBGA67-0608-0.80-001
  2. Populate Pin Type for all 67 terminals
  3. Add short Pin Description values
  4. Assign Section, Pin Group, and Pin Orientation
  5. Optionally refine the project description to include package and organization details
If you want, I can do the next step and sync the terminal properties to the datasheet so the symbol becomes fully annotated.
Fix flagged mismatches
Check missing datasheets
Audit package matches
Review one critical IC
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  • Generic Capacitor
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  • Generic Resistor
    Generic Resistor
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  • Ground
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TC58NVG1S3HBAI6

TC58NVG1S3HBAI6 thumbnail
NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM) FLASH - NAND (SLC) Memory IC 2Gbit Parallel 25 ns 67-VFBGA (6.5x8) The TC58NVG1S3HBAI6 is a 2-Gbit (256M × 8) SLC NAND flash memory device originally developed by Toshiba (now Kioxia). It is a CMOS-based, electrically erasable and programmable read-only memory (EEPROM) used to store data even when power is removed. This device uses Single-Level Cell (SLC) NAND technology, which offers high reliability, fast access time, and long endurance, making it suitable for industrial and embedded systems. Key Characteristics Memory Type: NAND Flash (Non-volatile) Technology: SLC (Single-Level Cell) Density: 2 Gbit (256M × 8 organization) Interface: Parallel I/O Supply Voltage: 2.7 V – 3.6 V Access Time: ~25 ns Package: 67-ball VFBGA (compact surface-mount) Functional Overview Organized into pages and blocks (typical NAND structure) Supports operations such as: Read Page program (write) Block erase Copy-back operations Uses shared I/O pins for address, data, and command input/output Internally, data is transferred between the memory array and internal registers in page-sized chunks (~2176 bytes including spare area). Typical Applications Embedded systems storage Firmware and boot memory Industrial control systems Data logging devices Consumer electronics (e.g., cameras, audio storage) #CommonPartsLibrary #IntegratedCircuit #memory #TC58NVG1

Properties

TC58NVG1S3HBAI6

Toshiba

Integrated Circuits

datasheet.datasheetarchive.com/originals/distributors/DKDS-29/569502.pdf

IC

creativecommons.org/licenses/by/4.0/

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