Datasheet Review and Symbol Validation
Table
| Field | Value |
|---|---|
| MPN | W9825G6KH-6I |
| Manufacturer | Winbond |
| Part type | Integrated Circuits |
| Description | 256 Mb SDRAM, 166 MHz, TSOP II 54 |
| Package from datasheet | TSOP II, 54-pin, 400 mil, 0.80 mm pitch |
| Schematic implementation | 54 individual terminal pins |
| PCB footprint presence | Yes, 54 pads present |
| Nets defined | None |
Table
| Parameter | Datasheet value |
|---|---|
| Memory organization | 4,194,304 words x 4 banks x 16 bits |
| Density | 256 Mb |
| Interface | LVTTL |
| Supply voltage | 3.3 V ± 0.3 V |
| Speed grade for -6I | 166 MHz / CL3 or 133 MHz / CL2 |
| Temperature grade for -6I | -40 °C to 85 °C |
| Package | TSOP II 54-pin, 400 mil, 0.80 mm pitch |
Table
| Feature | Datasheet value |
|---|---|
| CAS latency | 2, 3 |
| Burst lengths | 1, 2, 4, 8, full page |
| Refresh | 8K cycles / 64 ms at -40 °C to 85 °C |
| Self-refresh | Supported |
| Note | Self refresh not supported for TA > 85 °C |
| DQM | LDQM, UDQM byte masking |
| Precharge | Auto-precharge and controlled precharge |
| Power modes | Power-down, self-refresh |
Table
| Parameter | Rating |
|---|---|
| Any pin relative to VSS | -1 V to VDD + 0.5 V, limited to 4.6 V max |
| VDD/VDDQ relative to VSS | -1 V to 4.6 V |
| Operating temperature for -6I | -40 °C to 85 °C |
| Storage temperature | -55 °C to 150 °C |
| Soldering temperature | 260 °C for 10 s |
| Power dissipation | 1 W |
| Short-circuit output current | 50 mA |
Table
| Parameter | Min | Typ | Max |
|---|---|---|---|
| VDD | 3.0 V | 3.3 V | 3.6 V |
| VDDQ | 3.0 V | 3.3 V | 3.6 V |
| VIH | 2.0 V | - | VDD + 0.3 V |
| VIL | -0.3 V | - | 0.8 V |
| Operating temperature for -6I | -40 °C | - | 85 °C |
Table
| Parameter | Datasheet value |
|---|---|
| VOH | 2.4 V min at IOH = -2 mA |
| VOL | 0.4 V max at IOL = 2 mA |
| Input leakage | -5 µA to 5 µA |
| Output leakage | -5 µA to 5 µA |
| IDD1 operating current for -6I | 60 mA max |
| IDD2 standby current for -6I | 25 mA max |
| IDD2P power-down standby for -6I | 2 mA max |
| IDD3 no operating current for -6I | 35 mA max |
| IDD4 burst operating current for -6I | 80 mA max |
| IDD5 auto-refresh current for -6I | 75 mA max |
| IDD6 self-refresh current for -6I | 2 mA max |
Table
| Parameter | Max |
|---|---|
| CI | 3.8 pF |
| CCLK | 3.5 pF |
| CIO | 6.5 pF |
Table
| Pin/function | Datasheet description |
|---|---|
| VDD | Power for input buffers and logic circuit inside DRAM |
| VSS | Ground for input buffers and logic circuit inside DRAM |
| VDDQ | Power for I/O buffer, separated from VDD to improve DQ noise immunity |
| VSSQ | Ground for I/O buffer, separated from VSS to improve DQ noise immunity |
| CLK | System clock used to sample inputs on the rising edge |
| CKE | Controls clock activation/deactivation and entry to power-down, suspend, or self-refresh |
| CS | Chip select, enables/disables command decoder |
| RAS | Row address strobe command input |
| CAS | Column address strobe command input |
| WE | Write enable command input |
| LDQM / UDQM | Input/output mask pins for byte masking |
| NC | No connection |
Table
| Pin/function | Datasheet description |
|---|---|
| A0-A12 | Multiplexed row/column address inputs |
| A10/AP | Also selects auto-precharge behavior during precharge/read/write commands |
| BS0 / BS1 | Bank select inputs |
| DQ0-DQ15 | Multiplexed data input/output pins |
Table
| Dimension | Min | Nom | Max |
|---|---|---|---|
| D | 22.09 mm | 22.22 mm | 22.35 mm |
| E | 11.56 mm | 11.76 mm | 11.96 mm |
| E1 | 10.03 mm | 10.16 mm | 10.29 mm |
| Pitch e | - | 0.80 mm | - |
| Body height A | - | 0.95 mm | 1.05 mm |
| Lead length L | 0.40 mm | 0.50 mm | 0.60 mm |
Table
| Severity | Finding | Why it matters |
|---|---|---|
| Critical | The left-side symbol pin mapping is incorrect from pin 3 onward through pin 27. | This can cause a board wired to the wrong SDRAM pins, leading to total functional failure. |
| Critical | Several power and I/O supply pins are assigned to the wrong pin numbers. | This can cause incorrect power connection and possible device damage. |
| Critical | Several control/address pins are shifted to wrong numbers. | This will break memory initialization and bus operation even if the board is assembled correctly. |
| Medium | Footprint count appears correct at 54 pads, but geometric land pattern details were not exposed by the PCB inspector. | Pin count is consistent, but full mechanical verification of pad geometry/pitch in-project could not be completed from the available layout metadata. |
Table
| Project symbol pin | Project pin number | Datasheet expected at that pin number | Result |
|---|---|---|---|
| VDDQ_1 | 3 | DQ1 | Mismatch |
| DQ1 | 4 | DQ2 | Mismatch |
| DQ2 | 5 | VSSQ | Mismatch |
| VSSQ_1 | 6 | DQ3 | Mismatch |
| DQ4 | 8 | VDDQ | Mismatch |
| VDDQ_2 | 9 | DQ5 | Mismatch |
| VDD_2 | 14 | LDQM | Mismatch |
| LDQM | 15 | BS0 | Mismatch |
| ~WE | 16 | BS1 | Mismatch |
| ~CAS | 17 | A10/AP | Mismatch |
| ~RAS | 18 | A0 | Mismatch |
| ~CS | 19 | A1 | Mismatch |
| BS0 | 20 | A2 | Mismatch |
| BS1 | 21 | A3 | Mismatch |
| A10/AP | 22 | VDD | Mismatch |
| A0 | 23 | CS | Mismatch |
| A1 | 24 | RAS | Mismatch |
| A2 | 25 | CAS | Mismatch |
| A3 | 26 | WE | Mismatch |
| VDD_3 | 27 | VDDQ | Mismatch |
Table
Table
| Area | Verdict |
|---|---|
| Datasheet availability | Present |
| Part metadata completeness | Good after datasheet extraction |
| Symbol correctness | Fail - critical pin mapping errors |
| Footprint existence | Present |
| Footprint mechanical verification | Partial only |
| Risk if used as-is | High risk of nonfunctional or damaged hardware |