High-Side Gate Driver IC Non-Inverting 19-VSSOP
The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail.
As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control.
The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations.
The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs.
Spec Sheet
Identification
Part Number: TPS48100QDGXRQ1
Device Family: TPS48100-Q1
Manufacturer: Texas Instruments
Functional Classification
Device Type: Dual high-side gate driver IC
Driven Configuration: High-side
Channel Type: Synchronous, dual independent drive channels
Gate Type Driven: N-channel power MOSFET
Input Logic: Non-inverting
Electrical Characteristics
Supply Voltage Range: Wide automotive-class supply range
Quiescent Current: Low-IQ class, optimized for always-on automotive modules
Output Drive Current: Symmetric source and sink peak output current
Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation
Protection & Diagnostics
Application Context: Suited for protected high-side switching designs typical of the automotive driver family
Robustness: Designed to tolerate automotive transient and load-dump conditions
Environmental & Qualification
Temperature Grade: Extended automotive operating temperature range
Automotive Qualification: AEC-Q100 qualified
RoHS Compliance: Yes
Package
Package Type: Small-outline surface-mount package, VSSOP style
Mounting: Surface mount technology (SMT)
Packaging Format
Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options