Based on Avia Semiconductor’s patented technology, HX711 is a precision 24-bit analog-to-digital converter (ADC) designed for weigh scales and industrial control applications to interface directly with a bridge sensor.

The RC522 is a 13.56MHz RFID module that is based on the MFRC522 controller from NXP semiconductors. The module can supports I2C, SPI and UART and normally is shipped with a RFID card and key fob. It is commonly used in attendance systems and other person/object identification applications. #RFID #Module

The NIKO-SEM PB600BA is an N-Channel Enhancement Mode Field Effect Transistor, presented in a compact PDFN 2x2S package. This semiconductor component operates with a maximum Drain-Source Voltage (VDS) of 30V and boasts a low On-Resistance (RDS(ON)) of 12mΩ, which enables efficient current handling of up to 9A at 25°C. The device is designed for high-performance applications, featuring a Gate-Source Voltage (VGS) range up to ±20V and capable of pulsed drain currents reaching 27A. Additionally, the PB600BA is Halogen-Free and Lead-Free, making it compliant with RoHS standards. It also supports an Avalanche Current (IAS) of 12.6A and an Avalanche Energy (EAS) of 7.9mJ. With thermal resistance parameters optimized for reliable operation, this transistor is ideal for power management and switching applications in various electronic designs.

The component under discussion is designed for advanced electronic systems, targeting applications that require reliable connectivity and precise data acquisition. Engineered by SEMTECH, a leader in high-performance analog and mixed-signal semiconductors and advanced algorithms, this module showcases its prowess in the realm of wireless technology. It incorporates the LR112x series chips, specifically mentioning the LR1120 and LR1121, which are notable for their low power consumption and robustness in communication capabilities. These chips cater to a variety of frequency bands, with explicit mentions of R915 and R868, indicating their suitability for a broad range of geographical regions and regulatory requirements. This module is particularly designed with an eye towards innovation in the domain of Internet of Things (IoT) applications, offering features that ensure seamless integration into existing technology with an emphasis on ease of deployment and operational efficiency. Key features highlighted include multiple onboard antennae options such as ANT_GNSS and ANT_WIFI, ensuring comprehensive connectivity solutions for different environmental and application requirements. Also notable is the mention of a VOD_RADIO and the inclusion of interfaces like SPI and BUSY signaling, underscoring the component's flexibility in system integration and communication protocol support. Furthermore, SEMTECH references specific considerations for design and regulatory compliance, indicating the component's targeted use in professional grade equipment and scenarios. The datasheet also hints at an evaluation-focused approach, with designations like "For evaluation only" and remarks on FCC approval status, suggesting that this component is positioned for development and testing in cutting-edge wireless applications. This focus on flexibility, regulatory compliance, and advanced connectivity options positions SEMTECH's component as a crucial asset for designers and engineers looking to innovate in the IoT and wireless communication sectors.

The APM2300CA, manufactured by Sinopower Semiconductor, is a high-performance N-Channel Enhancement Mode MOSFET designed for power management in notebook computers, portable equipment, and battery-powered systems. This component delivers a maximum drain-source voltage (VDSS) of 20V and can handle continuous drain current up to 6A when VGS is 10V, ensuring robust performance for demanding applications. Its low RDS(ON) values of 25mΩ (typ.) at VGS=10V, 32mΩ (typ.) at VGS=4.5V, 40mΩ (typ.) at VGS=2.5V, and 65mΩ (typ.) at VGS=1.8V minimize power loss and heat generation. The APM2300CA is reliable and rugged, complying with RoHS standards and available in a lead-free, halogen-free SOT-23 package, featuring a maximum power dissipation of 0.83W at 25℃. It is optimized for fast switching, with total gate charge (Qg) of 6nC (typ.) at VGS=4.5V and a gate resistance (RG) of 6Ω, supporting efficient and precise control in diverse power applications.

The NTZD3154N, manufactured by ON Semiconductor, is a dual N-channel MOSFET designed for small signal applications. This component boasts a low RDS(on) for improved system efficiency and a low threshold voltage, making it highly suitable for applications such as load/power switches, power supply converter circuits, and battery management in devices like cell phones, digital cameras, and PDAs. The NTZD3154N features a compact 1.6 x 1.6 mm footprint and an ESD-protected gate, ensuring robust performance in constrained spaces. With a maximum drain-to-source voltage (VDSS) of 20 V and a continuous drain current of up to 540 mA (at 25°C), the NTZD3154N is optimized for efficient power management. The device is also compliant with RoHS standards, being Pb-Free and Halogen Free/BFR Free, ensuring environmentally friendly usage. The component is available in the SOT-563-6 package, identified by the specific device code "TV" and a date code marking.

BGA289C80P17X17_1400X1400X132N NXP Semiconductors SOC i.MX 6ULL ARM Cortex A7 CMOS 289-Pin LFBGA Tray https://pricing.snapeda.com/search/part/MCIMX6Y0CVM05AB/?ref=eda None MCIMX6Y0CVM05AB In Stock None Aliases: undefined

A semiconductor rectifying device in which the barrier between the two regions of opposite conductivity.

QFP50P1200X1200X160-64N LQFP-64 NXP Semiconductors NXP USA None MK22FN1M0VLH12 ARM® Cortex®-M4 Kinetis K20 Microcontroller IC 32-Bit 120MHz 1MB (1M x 8) FLASH 64-LQFP (10x10) Not in stock Aliases: undefined

This capacitive fingerprint sensor supports fingerprint capture, image processing, fingerprint storage, fingerprint comparison, and so on. Taking ID809 high-performance processor and semiconductor fingerprint sensor as the core, the sensor adopts built-in IDfinger6.0 algorithm, which can complete all fingerprint identification work independently.

BGA289C80P17X17_1400X1400X132N NXP Semiconductors SOC i.MX 6ULL ARM Cortex A7 CMOS 289-Pin LFBGA Tray https://pricing.snapeda.com/search/part/MCIMX6Y0CVM05AB/?ref=eda None MCIMX6Y0CVM05AB In Stock None Aliases: undefined

A semiconductor light source that emits light when current flows through it.

BGA289C80P17X17_1400X1400X132N None None Not in stock SOC i.MX 6ULL ARM Cortex A7 CMOS 289-Pin LFBGA Tray MCIMX6Y0CVM05AB NXP Semiconductors Aliases: undefined

The Alpha & Omega Semiconductor AO3422 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed using advanced trench technology. This technology ensures the component offers low RDS(ON) and minimal gate charge, making it highly efficient for use in various electronic applications. Key features of the AO3422 include a 55V drain-source voltage (VDS), a continuous drain current (ID) of 2.1A at a gate-source voltage (VGS) of 4.5V, and RDS(ON) values as low as 160mΩ at VGS = 4.5V. It supports a wide gate drive range from 2.5V to 12V, making it versatile for different operating conditions. Specifically designed for load switch applications, the AO3422 comes in a compact SOT23 package, offering a blend of performance, efficiency, and space-saving design. Its absolute maximum ratings include a drain-source voltage of up to 55V, gate-source voltage of up to +12V, and a power dissipation of 1.25W at 25°C. With thermal characteristics designed for robust operation, including a maximum junction-to-ambient thermal resistance of 75°C/W for short durations, the AO3422 is optimized for high-performance switch operations in a range of electronic circuits.

BGA289C80P17X17_1400X1400X132N NXP Semiconductors SOC i.MX 6ULL ARM Cortex A7 CMOS 289-Pin LFBGA Tray https://pricing.snapeda.com/search/part/MCIMX6Y0CVM05AB/?ref=eda None MCIMX6Y0CVM05AB In Stock None Aliases: undefined

A semiconductor light source that emits light when current flows through it.

The Arduino Nano 33 BLE is an evolution of the traditional Arduino Nano, but featuring a lot more powerful processor, the nRF52840 from Nordic Semiconductors, a 32-bit ARM® Cortex™-M4 CPU running at 64 MHz.

QFP50P1200X1200X160-64N LQFP-64 NXP Semiconductors NXP USA None MK22FN1M0VLH12 ARM® Cortex®-M4 Kinetis K20 Microcontroller IC 32-Bit 120MHz 1MB (1M x 8) FLASH 64-LQFP (10x10) Not in stock Aliases: undefined

The Arduino Nano 33 BLE is an evolution of the traditional Arduino Nano, but featuring a lot more powerful processor, the nRF52840 from Nordic Semiconductors, a 32-bit ARM® Cortex™-M4 CPU running at 64 MHz.

A semiconductor rectifying device in which the barrier between the two regions of opposite conductivity.

The FDB1D7N10CL7 is an N-Channel Shielded Gate POWERTRENCH® MOSFET manufactured by ON Semiconductor. This advanced MOSFET leverages ON Semiconductor's POWERTRENCH process, incorporating Shielded Gate technology to deliver minimized on-state resistance and superior switching performance with a high-quality soft body diode. The component features a maximum drain-to-source voltage (VDS) of 100 V and can handle continuous drain currents up to 268 A at 25°C. It boasts a low RDS(on) value of 1.7 mΩ at a gate-to-source voltage (VGS) of 12 V and drain current (ID) of 100 A, making it highly efficient for power management applications. Key applications include industrial motor drives, power supplies, automation, battery-operated tools, solar inverters, and energy storage systems. The FDB1D7N10CL7 is housed in a robust D2PAK7 (TO-263 7 LD) package and is designed to withstand a wide range of operating temperatures from -55°C to +175°C.

The APM2300CA, manufactured by Sinopower Semiconductor, is an N-Channel Enhancement Mode MOSFET designed for efficient power management in notebook computers, portable equipment, and battery-powered systems. This MOSFET operates with a maximum drain-source voltage of 20V and can handle a continuous drain current of up to 6A. It features a low drain-source on-state resistance (R_DS(ON)) of 25mΩ at V_GS = 10V, making it highly efficient for switching applications. The component is packaged in a compact SOT-23 form factor and is compliant with RoHS standards, ensuring it is both lead-free and environmentally friendly. Notably, the APM2300CA offers reliable and rugged performance, with a maximum junction temperature of 150°C and various gate charge characteristics that support fast switching. This MOSFET is ideal for applications requiring high efficiency and compact size.

The AO3414 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode Field Effect Transistor (FET) leveraging advanced trench technology to deliver excellent RDS(ON), low gate charge, and reliable operation with gate voltages as low as 1.8V. Engineered for applications requiring reliable load switching or precise control in PWM circuits, the AO3414 is well-suited for high-efficiency performance. This component features a maximum drain-source voltage (VDS) of 20V and supports a continuous drain current (ID) of 4.2A at VGs of 4.5V. Distinguishing characteristics include RDS(ON) values of less than 50mΩ at VGS = 4.5V, 63mΩ at VGS = 2.5V, and 87mΩ at VGS = 1.8V, ensuring minimal power loss and optimal thermal efficiency. Packaged in a compact TO-236 (SOT-23) form factor, it meets Pb-free standards and is available as the AO3414L for a Green Product option, both versions maintaining electrical equivalence. The AO3414 also boasts fast switching times and robust thermal performance, with comprehensive specifications confirming its suitability for high-performance consumer electronics.

The AO3414 from Alpha & Omega Semiconductor is a N-channel enhancement mode field-effect transistor (FET) that utilizes advanced trench technology to offer exceptional performance characteristics, including low RDS(ON), minimal gate charge, and compatibility with gate voltages as low as 1.8V. This component is specifically designed for use in load-switching and PWM applications. The AO3414 is a Pb-free product meeting ROHS and Sony 259 specifications, with an option for a Green Product under part number AO3414L. Both variants are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and various RDS(ON) values depending on the gate voltage, with a maximum of 87mΩ at VGS=1.8V. Encased in the TO-236 (SOT-23) package, the AO3414 features a maximum power dissipation of 1.4W at 25℃ and a junction-to-ambient thermal resistance of 90°C/W. This robust FET additionally offers a commendable forward transconductance of 11 S and a low total gate charge of 6.2 nC, making it an efficient choice for high-performance applications.

The NTTFS4C06N, manufactured by ON Semiconductor, is a high-performance, single N-Channel Power MOSFET designed for applications requiring efficient switching and low conduction losses. This MOSFET is rated for a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 67 A. Key features include a low RDS(on) of 4.2 mΩ at VGS = 10 V and 6.1 mΩ at VGS = 4.5 V, which minimizes conduction losses, and optimized gate charge characteristics that reduce switching losses. Additionally, the component boasts low capacitance to minimize driver losses, making it ideal for use in DC-DC converters, power load switches, and notebook battery management systems. The device is RoHS compliant, Pb-free, and halogen-free, ensuring environmentally friendly compliance. The NTTFS4C06N is available in a compact WDFN8 package, making it suitable for high-density circuit designs.