Part Data Verification and Update

flux

22:53

Inspecting project details.

Reviewing the bill of materials.

Analyzing the PCB layout.

Analyzing the schematic.

Running multiple web searches.

Found 10 results.

Found 2 results.

Running multiple web searches.

Running multiple web searches.

Found 5 results.

Found 10 results.

Searching the project.

Searching 4 domains.

Fetching pin mapping info.

Searching 3 domains.

Looking for "package type, pin configuration, terminal names, how many source/drain pins, gate pin, footprint/package designation for SiSS52DN-T1-GE3" in siss52dn.pdf

Identifying metadata issues.

I reviewed the current part project against the available project data and the existing datasheet workflow for part verification. The right process here is: confirm the Datasheet URL, extract metadata + pin data from the datasheet, then compare that against the terminal elements and footprint pad map in the part project
Status
  • Datasheet property: already set to the official Vishay PDF, so I did not change it.
  • Project type: this is a part project with terminal elements already created.
  • What I could verify directly from the project: MPN, manufacturer, description, terminal count, terminal names, terminal numbers, and footprint pad count.
  • What remains limited: the datasheet/PDF extraction tools timed out, so I could only cross-check against the project plus official/distributor metadata visible from search results, not a full parsed pin-function table.

Current part metadata

FieldCurrent valueAssessment
Manufacturer Part NumberSiSS52DN-T1-GE3Looks correct
Manufacturer NameVishayLooks correct
Part TypeTransistorsBroad but acceptable; MOSFET would be more precise
Designator PrefixQCorrect
DescriptionN-Channel 30 V (D-S) MOSFETCorrect but minimal
Datasheet URLhttps://www.vishay.com/docs/79977/siss52dn.pdfAlready set, official
Package / Case CodeMissingShould be added
Key specs I could confirm
From the official Vishay search result and exact-MPN distributor listings:
  • N-channel MOSFET
  • 30 V drain-source rating
  • Package family: PowerPAK 1212-8S / 1212-8SH
  • Distributor listings for this exact MPN show 8-pin package family, surface mount, and headline current ratings around 47.1 A (Ta) / 162 A (Tc)
Symbol / terminal audit
The schematic currently has 11 terminal components, which is consistent with a MOSFET package model where multiple drain/source pads are broken out individually in the part project for footprint mapping. The terminals present are:

Table

TerminalPin NumberCurrent labelPin TypeAssessment
S_11SourceUnspecifiedLabel looks plausible, type missing
S_22SourceUnspecifiedLabel looks plausible, type missing
S_33SourceUnspecifiedLabel looks plausible, type missing
G4GateUnspecifiedLabel looks plausible, type missing
D_15DrainUnspecifiedLabel looks plausible, type missing
D_26DrainUnspecifiedLabel looks plausible, type missing
D_37DrainUnspecifiedLabel looks plausible, type missing
D_48DrainUnspecifiedLabel looks plausible, type missing
D_59DrainUnspecifiedLabel looks plausible, type missing
D_610DrainUnspecifiedLabel looks plausible, type missing
D_711DrainUnspecifiedLabel looks plausible, type missing
Footprint audit
The layout contains:
  • 11 pads
  • one footprint container
  • fab/silk primitives and text
  • pad designators matching the 11 terminal labels above
So the symbol terminal count and footprint pad count are internally consistent.

Mismatches / issues flagged

IssueSeverityNotes
Package or Case Code missingMediumShould be populated with the exact datasheet package string
All terminal Pin Type properties are UnspecifiedMediumFor a MOSFET part, these should be typed at least as Gate/Input-like and Source/Drain passive or appropriate project convention
No Pin Description properties visibleLowHelpful for library quality, though not strictly required
Description is minimalLowCould be improved with package + key rating
Part Type is generic (Transistors)LowMOSFET would be more searchable/precise
Bottom line
  • No obvious symbol-to-footprint mismatch: the project has 11 terminals and 11 footprint pads, and the naming pattern is sensible for a MOSFET with one gate, multiple source pads, and multiple drain pads.
  • Main quality gap: metadata completeness and terminal property completeness, not gross pin-map inconsistency.
  • Most likely needed updates:
    • add Package or Case Code
    • set terminal Pin Type
    • optionally add Pin Description
    • optionally tighten Part Type and description
If you want, I can do the cleanup pass next:
  • fill in the missing package property
  • set pin types for all 11 terminals
  • add short pin descriptions
  • update the description to a cleaner library-style summary
The only thing I’d still want to confirm before editing is the exact package string from the datasheet page itself, since the PDF extraction timed out in this run.
Clean up part metadata
Tighten package string
Improve part description
Find exact package code
11 days
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Documents

    Documents are markdown text files which describe project goals, capture details, or even simulation outputs.

    Assets

    SISS52DN-T1-GE3-thumb.png

    SISS52DN-T1-GE3-thumb.png

    SISS52DN-T1-GE3-thumbThumbnail
    kicad_mod

    SiSS52DN-T1-GE3

    SISS94DNT1GE3.kicad_modFootprint
    stp

    SiSS52DN-T1-GE3

    SiSS52DN-T1-GE3.stp3D Model
    SiSS52DN-T1-GE3

    SiSS52DN-T1-GE3

    SiSS52DN-T1-GE3 Symbol.svgDefault

    SISS52DN-T1-GE3

    SISS52DN-T1-GE3 thumbnail
    N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH 30 V N-channel TrenchFET® Gen V MOSFET that combines very low on-resistance (RDS(on)), high current capability, and a thermally efficient compact package. It is optimized for applications where high efficiency, low power loss, and small PCB footprint are critical. This device is built using advanced trench MOSFET technology, enabling low conduction and switching losses, which improves overall system efficiency in power electronics designs. N-channel MOSFET (enhancement mode) Low RDS(on): ~1.2 mΩ @ 10 V → minimizes conduction losses High current capability: 47.1 A (ambient) up to 162 A (case) 30 V drain-source voltage (VDS) Low gate charge (Qg) → fast switching performance Wide operating temperature: −55 °C to +150 °C Compact PowerPAK® 1212-8 package for high power density #CommonPartsLibrary #Transistor #FET #Mosfet #SISS52

    Properties

    SiSS52DN-T1-GE3

    Vishay

    Transistors

    vishay.com/docs/79977/siss52dn.pdf

    Q

    creativecommons.org/licenses/by/4.0/

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