I want to blow up a MOSFET gloriously. Basically supercapacitor onto MOSFET with a gate flipping setting.

Welcome to your new project. Imagine what you can build here.

The 2N7002DW from iSion is a high-speed N-channel enhancement mode field-effect transistor (FET) designed for pulse amplifier and drive applications. Manufactured using the N-Channel DMOS process, this component offers robust performance with a maximum drain-source voltage (VDSS) of 60V and a gate-source voltage (VGSS) of +20V. It features a continuous drain current (ID) of 300mA and a pulsed drain current (IDM) of 800mA, making it suitable for demanding switching tasks. The 2N7002DW is compliant with ESD MIL-STD 833, providing +2.5KV contact discharge protection. Available in a compact SOT-363 package, the device also adheres to full RoHS standards, ensuring environmentally friendly compliance. Key electrical characteristics include a gate threshold voltage (VGS(th)) range of 1.0V to 2.5V, a static drain-source on-resistance (RDS(ON)) of up to 3.0Ω at VGS of 10V, and dynamic switching times with a turn-on delay (td(on)) of 6ns and a turn-off delay (td(off)) of 25ns. This transistor is ideal for engineers seeking reliable performance in high-speed pulse applications.

The Alpha & Omega Semiconductor AO3422 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed using advanced trench technology. This technology ensures the component offers low RDS(ON) and minimal gate charge, making it highly efficient for use in various electronic applications. Key features of the AO3422 include a 55V drain-source voltage (VDS), a continuous drain current (ID) of 2.1A at a gate-source voltage (VGS) of 4.5V, and RDS(ON) values as low as 160mΩ at VGS = 4.5V. It supports a wide gate drive range from 2.5V to 12V, making it versatile for different operating conditions. Specifically designed for load switch applications, the AO3422 comes in a compact SOT23 package, offering a blend of performance, efficiency, and space-saving design. Its absolute maximum ratings include a drain-source voltage of up to 55V, gate-source voltage of up to +12V, and a power dissipation of 1.25W at 25°C. With thermal characteristics designed for robust operation, including a maximum junction-to-ambient thermal resistance of 75°C/W for short durations, the AO3422 is optimized for high-performance switch operations in a range of electronic circuits.

This level shifter board combines the ease-of-use of the bi-directional TXB0108 with an I2C-compatible FET design following NXP's app note.

Voice-Controlled LTE Print-on-Demand Terminal (Quectel EC800M + ESP32-WROOM-32D BT Printer Interface, Protected USB-C 5 V Input, Unified 3.3 V Logic Rail, 8.5 V/3 A Printer Supply with High-Side FET & Protections, Locked Display/Audio/Radio I/O — Layout-Ready) #EC800M #USB-C-Protected #3V3Only #8.5V3A #LockedI/O

The AO3414 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode Field Effect Transistor (FET) leveraging advanced trench technology to deliver excellent RDS(ON), low gate charge, and reliable operation with gate voltages as low as 1.8V. Engineered for applications requiring reliable load switching or precise control in PWM circuits, the AO3414 is well-suited for high-efficiency performance. This component features a maximum drain-source voltage (VDS) of 20V and supports a continuous drain current (ID) of 4.2A at VGs of 4.5V. Distinguishing characteristics include RDS(ON) values of less than 50mΩ at VGS = 4.5V, 63mΩ at VGS = 2.5V, and 87mΩ at VGS = 1.8V, ensuring minimal power loss and optimal thermal efficiency. Packaged in a compact TO-236 (SOT-23) form factor, it meets Pb-free standards and is available as the AO3414L for a Green Product option, both versions maintaining electrical equivalence. The AO3414 also boasts fast switching times and robust thermal performance, with comprehensive specifications confirming its suitability for high-performance consumer electronics.

The AO3414 from Alpha & Omega Semiconductor is a N-channel enhancement mode field-effect transistor (FET) that utilizes advanced trench technology to offer exceptional performance characteristics, including low RDS(ON), minimal gate charge, and compatibility with gate voltages as low as 1.8V. This component is specifically designed for use in load-switching and PWM applications. The AO3414 is a Pb-free product meeting ROHS and Sony 259 specifications, with an option for a Green Product under part number AO3414L. Both variants are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and various RDS(ON) values depending on the gate voltage, with a maximum of 87mΩ at VGS=1.8V. Encased in the TO-236 (SOT-23) package, the AO3414 features a maximum power dissipation of 1.4W at 25℃ and a junction-to-ambient thermal resistance of 90°C/W. This robust FET additionally offers a commendable forward transconductance of 11 S and a low total gate charge of 6.2 nC, making it an efficient choice for high-performance applications.

N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB #CommonPartsLibrary #Transistor #FET

N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-220AB #Commonpartslibrary #Transistor #MOSFET #FET #tht

N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB #CommonPartsLibrary #Transistor #FET

The NIKO-SEM PB600BA is an N-Channel Enhancement Mode Field Effect Transistor (FET) housed in a PDFN 2x2S package, designed for applications requiring high efficiency and low on-resistance. This halogen-free and lead-free component boasts a Drain-Source Voltage (V_DS) of 30V and a Gate-Source Voltage (V_GS) of ±20V. With a maximum continuous drain current of 9A at 25°C and a pulsed drain current capability of up to 27A, it is well-suited for high-current applications. The device features a low R_DS(on) of 12mΩ at V_GS = 10V, ensuring minimal power loss and heat generation. The PB600BA also exhibits excellent thermal performance with a junction-to-ambient thermal resistance (R_θJA) of 71.7°C/W. Additional characteristics include a gate threshold voltage (V_GS(th)) range of 1.3V to 2.5V, a total gate charge (Q_g) of 15nC at V_GS = 10V, and a maximum power dissipation of 1.7W at 25°C. This FET is ideal for use in power management, load switching, and other high-efficiency electronic circuits.

The 2N7002DW, manufactured by iSion, is an N-channel enhancement mode field-effect transistor (FET) designed for high-speed pulse amplifier and drive applications. It is fabricated using the N-channel DMOS process and comes in a compact SOT-363 package. The component offers robust ESD protection compliant with MIL-STD 833, +2.5KV contact discharge. Key features include a drain-source voltage (VDSS) of 60V, a gate-source voltage (VGSS) of +20V, and a continuous drain current (ID) of 300mA, with a pulsed drain current (IDM) of 800mA. The device has a maximum power dissipation (PD) of 350mW and operates within a junction temperature range of -55°C to +150°C. Additionally, it exhibits a low static drain-source on-resistance (RDS(ON)) of 2.0Ω at VGS = 10V and ID = 300mA, making it suitable for efficient switching applications. The thermal resistance from junction to ambient (RθJA) is rated at 500°C/W, ensuring reliable performance in various thermal conditions.

The IPB017N10N5LF is a high-performance N-channel MOSFET from Infineon's OptiMOS™ 5 Linear FET series, designed specifically for hot-swap and e-fuse applications. This 100 V component, housed in a D2-PAK 7pin package (PG-TO 263-7), features exceptionally low on-resistance (RDS(on)) and a wide safe operating area (SOA), making it ideal for demanding power management tasks. The device is rated for a continuous drain current of up to 180 A (silicon limited) and 314 A (package limited), with a maximum pulsed drain current of 720 A. It supports gate-source voltages ranging from -20 V to 20 V and is 100% avalanche tested, ensuring robust performance under extreme conditions. The IPB017N10N5LF is RoHS compliant, Pb-free, and halogen-free, adhering to environmental standards. Key electrical characteristics include a maximum RDS(on) of 1.7 mΩ at VGS=10 V and a gate threshold voltage range of 2.5 V to 4.1 V. This MOSFET is suitable for applications requiring high efficiency and reliability, supported by its qualification according to JEDEC standards.

N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole TO-92 #CommonPartsLibrary #Transistor #Mosfet #N-Channel #FET #ZVN2110

The AO3422 from Alpha & Omega Semiconductor is a high-performance, N-Channel Enhancement Mode Field Effect Transistor (FET) that leverages advanced trench technology to achieve outstanding RDS(ON) and low gate charge. Designed for efficient power conversion and load switching applications, this component operates effectively across a wide gate drive range of 2.5V to 12V. The AO3422 is characterized by a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 2.1A at a gate-source voltage (VGS) of 4.5V. Its RDS(ON) is impressively low, coming in at less than 160mΩ at VGS of 4.5V, making it suitable for a variety of power management tasks. The device is encapsulated in a compact SOT23 package, offering a robust solution for space-constrained applications. Additional features include a maximum junction temperature of 150°C, high forward transconductance, and fast switching characteristics that support efficient and reliable operation in high-performance circuit designs.

The 2N7002H, manufactured by iSion, is an N-channel enhancement mode field-effect transistor (FET) designed for high-speed pulse amplifier and drive applications. Utilizing the N-Channel DMOS process, this component features robust ESD protection compliant with MIL-STD 833, +2.5KV contact discharge. The 2N7002H is available in a SOT-23 package, ensuring full RoHS compliance and superior solderability as per MIL-STD-202, Method 208. Key specifications include a drain-source voltage (VDSS) of 60V, a gate-source voltage (VGSS) of +20V, and a maximum continuous drain current (ID) of 300mA. The device boasts a low static drain-source on resistance (RDS(ON)) of 2.0Ω at VGS of 10V and ID of 300mA, and dynamic characteristics such as a turn-on delay time (td(on)) of 6ns and a turn-off delay time (td(off)) of 25ns. The component operates within a junction temperature range of -55°C to +150°C and offers thermal resistances of 357°C/W junction-to-ambient and 90°C/W junction-to-case.

The AO3414, manufactured by Alpha & Omega Semiconductor, is an N-Channel Enhancement Mode Field Effect Transistor (FET) designed using advanced trench technology to deliver superior RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V. Ideal for load switch and PWM applications, the AO3414 is available in a Pb-free version that complies with ROHS and Sony 259 specifications, and a Green Product variant (AO3414L), both of which are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and a maximum RDS(ON) of 50mΩ at VGS=4.5V. The device is housed in a TO-236 (SOT-23) package, ensuring compact and efficient thermal performance. Additionally, the AO3414 boasts a maximum power dissipation of 1.4W at TA=25°C, a gate-source voltage (VGS) rating of +8V, and an operating junction temperature range of -55°C to 150°C. This component is optimized for consumer market applications, offering reliable performance and compliance with environmental standards.

N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB #CommonPartsLibrary #Transistor #FET

The FDV301N from ON Semiconductor® is an N-Channel logic level enhancement mode field effect transistor (FET), designed using ON Semiconductor's proprietary, high cell density, DMOS technology. This component is optimized for low voltage applications, offering a compact and efficient alternative to traditional digital transistors. It boasts a drain-source voltage (VDS) of 25V, a continuous drain current of 0.22A, and a peak drain current of 0.5A. The FDV301N features very low gate drive requirements, making it suitable for direct operation in 3V circuits, with a gate threshold voltage (VGS(th)) of less than 1.06V. The device also includes a gate-source Zener diode for enhanced ESD ruggedness, rated at over 6kV Human Body Model. With a maximum RDS(ON) of 5Ω at VGS=2.7V and 4Ω at VGS=4.5V, this FET is ideal for applications requiring minimal on-state resistance. The FDV301N is available in various packages including SOT-23, SuperSOT™-6, and SuperSOT™-8, providing flexibility for different design requirements.

Portable Fetal Monitoring System with ESP32, AD8232 FECG Front-End, and MAX30102 PPG Sensor

Template for Arduino Mega2560 Shield. On PCB you can find the board outline on the silkscreen. #Shield #arduino #template #mega #2560 #ATMEGA2560 #template #project #project-template

Counter IC Counter, Decade 1 Element 10 Bit Positive Edge 16-PDIP