Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
The 2SC5171 is a high-voltage, high-speed NPN bipolar junction transistor designed for switching and amplification applications. It is commonly used in power regulation circuits, switching power supplies, and high-voltage driver stages due to its fast switching characteristics and high collector-emitter voltage capability. The device is typically housed in a TO-220 package, providing good thermal performance for medium to high power applications.
Key Features
High collector-emitter voltage capability
Fast switching performance
High current handling capability
Low saturation voltage
Suitable for high-frequency operation
Absolute Maximum Ratings
Collector-Emitter Voltage (VCEO): 1500 V
Collector-Base Voltage (VCBO): 1500 V
Emitter-Base Voltage (VEBO): 9 V
Collector Current (IC): 3 A
Collector Power Dissipation (PC): 50 W
Junction Temperature (TJ): 150°C
Electrical Characteristics (at TA = 25°C unless otherwise specified)
DC Current Gain (hFE): 8 – 40
Collector-Emitter Saturation Voltage (VCE(sat)): 3 V (max)
Base-Emitter Voltage (VBE): ~1.5 V (typ)
Collector Cutoff Current (ICBO): 1 mA (max)
Transition Frequency (fT): 4 MHz (typ)
Package Information
Package Type: TO-220
Mounting Type: Through-hole
Pin Configuration:
Pin 1: Base
Pin 2: Collector
Pin 3: Emitter
Applications
Switching power supplies
High-voltage switching circuits
CRT display circuits
Motor control circuits
General-purpose high-voltage amplification