Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

The 2SC5171 is a high-voltage, high-speed NPN bipolar junction transistor designed for switching and amplification applications. It is commonly used in power regulation circuits, switching power supplies, and high-voltage driver stages due to its fast switching characteristics and high collector-emitter voltage capability. The device is typically housed in a TO-220 package, providing good thermal performance for medium to high power applications.

Key Features High collector-emitter voltage capability Fast switching performance High current handling capability Low saturation voltage Suitable for high-frequency operation Absolute Maximum Ratings Collector-Emitter Voltage (VCEO): 1500 V Collector-Base Voltage (VCBO): 1500 V Emitter-Base Voltage (VEBO): 9 V Collector Current (IC): 3 A Collector Power Dissipation (PC): 50 W Junction Temperature (TJ): 150°C Electrical Characteristics (at TA = 25°C unless otherwise specified) DC Current Gain (hFE): 8 – 40 Collector-Emitter Saturation Voltage (VCE(sat)): 3 V (max) Base-Emitter Voltage (VBE): ~1.5 V (typ) Collector Cutoff Current (ICBO): 1 mA (max) Transition Frequency (fT): 4 MHz (typ) Package Information Package Type: TO-220 Mounting Type: Through-hole Pin Configuration: Pin 1: Base Pin 2: Collector Pin 3: Emitter Applications Switching power supplies High-voltage switching circuits CRT display circuits Motor control circuits General-purpose high-voltage amplification

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