This is a IR2110 high side mosfet driver circuit with mosfet included. This is a circuit I use often and I believe it is time to give it its own board and project.

Welcome to your new project. Imagine what you can build here.

PWM-capable low-side MOSFET driver for controlling a 9 V LEGO motor from a Raspberry Pi 3.3 V GPIO signal, sized for up to 1.4 A stall/current peaks.

Nice — you can do a clean pulse + latch using a single quad Schmitt-NAND chip: 74HC132 (or 74LVC132 for 3.3 V systems). The HC132 contains four 2-input NAND gates with Schmitt inputs so you can both clean a noisy SYN480R DATA line and build an SR latch (NAND SR is active-LOW) inside one package. Only a few passives and a driver transistor are needed. Below is a ready-to-build recipe (parts, wiring, explanation, tuning tips, and an ASCII schematic) — no extra logic ICs required. Parts (per latch) 1 × 74HC132 (quad 2-input NAND with Schmitt inputs). If your system is 3.3 V use 74LVC132 / 74HC132 rated for 3.3 V. Rin = 47 kΩ (input series) Cfilter = 10 nF (input RC to ground) — tweak for debounce/clean time Rpulldown = 100 kΩ (pull-down at input node, optional) Rpullup = 100 kΩ (pull-up for active-LOW R input so reset is idle HIGH) Rbase = 10 kΩ, Q = 2N2222 (NPN) or small N-MOSFET (2N7002) to drive your load Diode for relay flyback (1N4001) if you drive a coil Optional small cap 0.1 µF decoupling at VCC of IC Concept / how it works (short) Use Gate1 (G1) of 74HC132 as a Schmitt inverter by tying its two inputs together and feeding a small RC filter from SYN480R.DATA. This removes HF noise and provides a clean logic transition. Because it's a NAND with tied inputs its function becomes an inverter with Schmitt behavior. Use G2 & G3 as the cross-coupled NAND pair forming an SR latch (active-LOW inputs S̄ and R̄). A low on S̄ sets Q = HIGH. A low on R̄ resets Q = LOW. Wire the cleaned/inverted output of G1 to S̄. A valid received pulse (DATA high) produces a clean LOW on S̄ (because G1 inverts), setting the latch reliably even if the pulse is brief. R̄ is your reset input (pushbutton, HT12D VT, MCU line, etc.) — idle pulled HIGH. Q drives an NPN/MOSFET to switch your load (relay, LED, etc.). Recommended wiring (pin mapping, assume one chip; use datasheet pin numbers) I’ll refer to the 4 gates as G1, G2, G3, G4. Use G4 optionally for additional conditioning or to build a toggler later. SYN480R.DATA --- Rin (47k) ---+--- Node A ---||--- Cfilter (10nF) --- GND | Rpulldown (100k) --- GND (optional, keeps node low) Node A -> both inputs of G1 (tie inputs A and B of Gate1 together) G1 output -> S̄ (S_bar) (input1 of Gate2) Gate2 (G2): inputs = S̄ and Q̄ -> output = Q Gate3 (G3): inputs = R̄ and Q -> output = Q̄ R̄ --- Rpullup (100k) --- VCC (reset is idle HIGH; pull low to reset) (optional) R̄ can be wired to a reset pushbutton to GND or to an MCU pin Q -> Rbase (10k) -> base of 2N2222 (emitter GND; collector to one side of relay coil) Other side of relay coil -> +V (appropriate coil voltage) Diode across coil If you prefer MOSFET low side switching: Q -> gate resistor 100Ω -> gate of 2N7002 2N7002 source -> GND ; drain -> relay coil low side

Welcome to your new project. Imagine what you can build here.

Welcome to your new project. Imagine what you can build here.

Welcome to your new project. Imagine what you can build here.

This is a IR2110 high side mosfet driver circuit with mosfet included. This is a circuit I use often and I believe it is time to give it its own board and project.

Arduino Uno Smart Bin Status Shield: 2-layer JLCPCB-assembled Arduino shield with LEDs, buzzer MOSFET driver, reed-switch connector, and hand-soldered stacking headers.

This is a IR2110 high side mosfet driver circuit with mosfet included. This is a circuit I use often and I believe it is time to give it its own board and project.

5 V, 10 W MOSFET low-side heater driver controlled from an MCU DAC/gate-control output, including power/heater connectors and basic gate protection.

UC3825-based adjustable 10 kHz PWM generator with potentiometer frequency and duty control, plus a 0-15 V MOSFET gate-driver output stage.

Airsoft HPA FCU - 2S VBAT_SOL direct, nRF52 BLE, MOSFET solenoid driver

24 V five-channel PWM low-side MOSFET LED driver for one RGBW LED and one 850 nm IR LED, controlled by 3.3 V logic inputs.

High-Current 12–30V 20A N-Channel MOSFET H-Bridge Motor Driver Board

12 V NE555 astable ignition-coil driver using an IRF840 MOSFET low-side switch with gate conditioning, decoupling, input/output connectors, and flyback clamp protection.

The NTMFS4C03N, manufactured by ON Semiconductor, is a high-performance, single N-Channel MOSFET designed for power applications. Encased in a compact SO-8FL package, this component offers a maximum drain-to-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 136A at 25°C. With an exceptionally low RDS(on) of 2.1 mΩ at VGS of 10V, it minimizes conduction losses, making it ideal for high-efficiency power management. Additionally, the MOSFET features low gate charge (QG) and capacitance, reducing driver losses and enhancing overall system efficiency. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring adherence to environmental standards. It also boasts a robust thermal performance with a junction-to-case thermal resistance (RθJC) of 1.95°C/W, making it suitable for applications requiring efficient heat dissipation. The NTMFS4C03N is available in tape and reel packaging options, accommodating various manufacturing needs.

True 4-Layer 2 oz Copper Scanner Head PCB with 28 Luddite_Coil_8mm Multilayer 8 mm OD Square Spiral Coils in a 2×14 Grid, 12 mm×18 mm Pitch, Individual MOSFET Drivers and Flyback Diodes per Coil, Bottom Layer Kept Component-Free #Luddite_Coil_8mm #2x14Grid #4Layer2Oz #CoilArray

Compact 2-Layer ESP32-WROOM-32E Ultrasonic Emitter Board with USB-C Auto-Programming, On-Board 12 V→3.3 V Buck, 3× Low-Side MOSFET Drivers, Optional U.FL Antenna, ESD/TVS Protection, RF/Power Partitioning, and Named Nets (PWR_12V_IN, 3V3, GND, DRV_CH1/2/3, LED_PWR/LED_NET/LED_EMIT) #ultrasonic #ESP32 #RFDesign #PowerDesign #PCBDesign

The inverter specs are Switching frequency: 200kHz Input voltage: 180VDC Output voltage: 120VAC Max power: 1500W I have designed an Inverter schematic for an uninterruptible power supply (UPS), Used an efficiency LCL topology filter to eliminate 3rd and 5th harmonics as induction motor is connected at load. The Inverter schematic that can convert 180VDC into 120VAC, which can be used in any household or industrial application. You can refer the BOM to check the MOSFET parts, drivers, and filter parameter values.

The inverter specs are Switching frequency: 200kHz Input voltage: 180VDC Output voltage: 120VAC Max power: 1500W I have designed an Inverter schematic for an uninterruptible power supply (UPS), Used an efficiency LCL topology filter to eliminate 3rd and 5th harmonics as induction motor is connected at load. The Inverter schematic that can convert 180VDC into 120VAC, which can be used in any household or industrial application. You can refer the BOM to check the MOSFET parts, drivers, and filter parameter values.

400V 8kW high-speed switched-capacitor energy transfer system with STM32 control, isolated gate drivers, SiC MOSFET matrix, current sensing, 4-layer PCB constraints, and transient simulation intent.

Open Hornet 16-channel 28 V magnetic-hold coil driver for Honeywell ET switches. Arduino Mega/Pro Micro logic inputs drive low-side 100 V MOSFET channels for ET switch magnet coils with common ground, fail-safe pulldowns, 100 V flyback protection, dedicated 28 V coil input, and conservative high-current 4-layer PCB routing.

36 V Contactor Coil Driver with Safe Kill Loop, 3.3 V Logic, SPI IMU, 24 V/5 A Buck, and ESP32 IO12-Driven E-Stop MOSFET via Series PH2.0 Safety Connectors #E_STOP #MOSFET #PH2.0 #SAFETY

The NTTFS4C06N, manufactured by ON Semiconductor, is a high-performance, single N-Channel Power MOSFET designed for applications requiring efficient switching and low conduction losses. This MOSFET is rated for a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 67 A. Key features include a low RDS(on) of 4.2 mΩ at VGS = 10 V and 6.1 mΩ at VGS = 4.5 V, which minimizes conduction losses, and optimized gate charge characteristics that reduce switching losses. Additionally, the component boasts low capacitance to minimize driver losses, making it ideal for use in DC-DC converters, power load switches, and notebook battery management systems. The device is RoHS compliant, Pb-free, and halogen-free, ensuring environmentally friendly compliance. The NTTFS4C06N is available in a compact WDFN8 package, making it suitable for high-density circuit designs.