Unipolar Motor Driver NMOS PWM 16-VQFN (3x3) #commonpartslibrary #integratedcircuit #powermanagement #motordriver

Unipolar Motor Driver NMOS SPI 24-HTSSOP #commonpartslibrary #integratedcircuit #powermanagement #motordriver

Unipolar Motor Driver NMOS PWM 8-SO PowerPad #CommonPartsLibrary #MotorDriver #IntegratedCircuit #DRV8870

N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

Unipolar Motor Driver Power MOSFET On/Off 8-SOIC #commonpartslibrary #integratedcircuit #powermanagement #motordriver

Digital Switch Unipolar Switch Open Drain Hall Effect PG-SOT23-3-15 #CommonPartsLibrary #Sensor #Transducer #magnetic-sensor #switches

Unipolar Motor Driver NMOS SPI 16-HTSSOP #CommonPartsLibrary #IntegradedCircuits #Unipolar #MotorDriver #Controller #PowerManagement

Unipolar Motor Driver Power MOSFET Parallel 23-ZIP (SLA) #CommonPartsLibrary #MotorDriver #IntegratedCircuit #SLA7078

Current Transducer, 8A, Unipolar, 3.3V current transducer LEM*HO8*NP*

16-bit, 500-kSPS, eight-channel, single-supply SAR ADC with ±12-V differential inputs The ADS8684W and ADS8688W are 4-channel and 8-channel, integrated data acquisition systems based on a 16-bit successive approximation (SAR) analogto-digital converter (ADC), operating at a throughput of 500kSPS. The devices feature integrated analog front-end circuitry for each input channel with overvoltage protection up to ±20V, a 4-channel or 8-channel multiplexer with automatic and manual scanning modes, and an on-chip, 4.096V reference with low temperature drift. Operating on a single 5V analog supply, each input channel on the devices can independently support bipolar input ranges of ±12.288V, ±6.144V, and ±3.072V and unipolar input ranges of 12.288V to 0V and 6.144V to 0V. The ADS8684W and ADS8688W offer a simple SPIcompatible serial interface to the digital host and also support daisy-chaining of multiple devices. The digital supply operates from 1.65V to 5.25V, enabling direct interface to a wide range of host controllers Features • 16-Bit ADCs with Integrated Analog Front-End • 4-, 8-Channel MUX with Auto and Manual Scan • Channel-Independent Programmable Inputs: – ±12.288V, ±6.144V, and ±3.072V – 12.288V to 0V and 6.144V to 0V • 5V Analog Supply: 1.65V to 5V I/O Supply • Constant Resistive Input Impedance: 1.2MΩ • Input Overvoltage Protection: Up to ±20V • On-Chip, 4.096V Reference with Low Drift • Excellent Performance: – 500kSPS Aggregate Throughput – DNL: ±0.6LSB; INL: ±0.8LSB – Low Drift for Gain Error and Offset – SNR: 91.5dB; THD: –102dB – Low Power: 65mW • AUX Input → Direct Connection to ADC Inputs • ALARM → High and Low Thresholds per Channel • SPI™-Compatible Interface with Daisy-Chain • Industrial Temperature Range: –40°C to 125°C #commonpartslibrary #ADS8688W #TexasInstruments #ADC #SARADC #DataAcquisition #IndustrialAutomation #SPI #PrecisionADC #AnalogFrontEnd #EmbeddedSystems #MeasurementSystems

Unipolar Motor Driver Power MOSFET PWM 12-QFN (2x2) #CommonPartsLibrary #IntegratedCircuit #PowerManagement #Motor-Driver #Controller #MP6550

Hall effect switch, unipolar, Bop=100G, Brp=45G, -40C to +85C, SOT-23W hall switch SOT?23*

Unipolar Motor Driver NMOS PWM 8-SO PowerPad #CommonPartsLibrary #MotorDriver #IntegratedCircuit #DRV8870

Digital Switch Unipolar Switch Open Drain Hall Effect 3-SIP #commonpartslibrary #sensor #Magneticsensor #integratedcircuit

Unipolar Motor Driver NMOS SPI 16-TSSOP #CommonPartsLibrary #IntegradedCircuits #MotorDriver #Controller #PowerManagement

Microstepping Motor Driver, 2-Phase, PWM, Unipolar 22-SIP #CommonPartsLibrary #MotorDriver #IntegratedCircuit #STK672