Automotive N-Channel Power MOSFET – 30 V N-channel TrenchFET® Gen IV power MOSFET optimized for automotive power distribution, battery management systems (BMS), motor drives, DC-DC converters, load switching, and high-current embedded power applications. Features a 30 V drain-to-source voltage (VDS), 437 A continuous drain current (TC = 25°C), and ultra-low RDS(on) of 1.16 mΩ maximum at VGS = 10 V (1.66 mΩ maximum at VGS = 4.5 V) for exceptionally low conduction losses. Offers ±20 V gate-to-source voltage, 595 A pulsed drain current, 500 W maximum power dissipation, low gate charge, optimized Qgd/Qgs ratio for fast switching, and an integrated body diode for high-efficiency switching applications. Qualified to AEC-Q101, 100% Rg and UIS tested, and specified for operation over a −55°C to +175°C junction temperature range. Housed in a PowerPAK® SO-8L surface-mount package. #Vishay #SQJ128ELPT1GE3 #SQJ128ELP #NChannelMOSFET #TrenchFET #PowerMOSFET #DCDCConverter #BatteryManagement #MotorDrive #AutomotiveElectronics #PowerPAKSO8L #EmbeddedSystems

MOSFETs SI7465DP-T1-GE3 POWERPAK-SO-8_L5.9-W4.9-P1.27-LS6.2-BL LCSC Part Number: C499482 JLCPCB Part Class: Extended Part Manufactured by VISHAY(威世)

MOSFETs SQJ457EP-T1_GE3 POWERPAK-SO-8_L4.9-W4.4-P1.27-BL LCSC Part Number: C511548 JLCPCB Part Class: Extended Part Manufactured by VISHAY(威世)