6 to 50 V, Triple half-bridge gate driver with programmable currents and SPI configuration Motor Driver NMOS SPI 48-VFQFPN (6x6) STDRIVE102BP is a highly integrated triple half-bridge gate driver designed for driving 3-phase brushless DC (BLDC) motors. It can control six external N-channel MOSFETs with programmable gate drive currents, enabling optimized switching performance and reduced EMI. The device features SPI-configurable settings, integrated charge pump circuitry for 100% high-side duty-cycle operation, built-in voltage regulators, programmable analog front-end blocks, and comprehensive protection mechanisms, making it suitable for battery-powered motor control applications such as power tools, vacuum cleaners, e-bikes, robotics, and industrial automation. Key Features Triple half-bridge gate driver for 3-phase BLDC motor control Operating supply voltage range: 6 V to 50 V Programmable gate drive capability up to: 1 A source current 2 A sink current Integrated charge pump supporting 100% high-side duty cycle Embedded 12 V LDO regulator for gate-drive circuitry Embedded 3.3 V LDO regulator for low-voltage circuitry SPI-configurable parameters and diagnostic functions Up to three programmable-gain amplifiers (PGAs) Up to three high-speed comparators VDS monitoring for MOSFET protection Thermal shutdown protection Undervoltage lockout (UVLO) protection Dual control modes (ENx/INx or INHx/INLx) TTL-compatible logic inputs up to 5 V Ultra-low standby current consumption (<50 nA) Matched propagation delay across all channels #CommonPartsLibrary #IntegratedCircuit #STDRIVE102BP #STMicroelectronics #GateDriver #BLDCMotor #MotorControl #ThreePhaseMotor #MOSFETDriver #PowerTools #Robotics #IndustrialAutomation #EBike #SPI #BrushlessMotor #EmbeddedSystems #PowerElectronics

High-Side Gate Driver IC Non-Inverting 19-VSSOP The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail. As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control. The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations. The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs. Spec Sheet Identification Part Number: TPS48100QDGXRQ1 Device Family: TPS48100-Q1 Manufacturer: Texas Instruments Functional Classification Device Type: Dual high-side gate driver IC Driven Configuration: High-side Channel Type: Synchronous, dual independent drive channels Gate Type Driven: N-channel power MOSFET Input Logic: Non-inverting Electrical Characteristics Supply Voltage Range: Wide automotive-class supply range Quiescent Current: Low-IQ class, optimized for always-on automotive modules Output Drive Current: Symmetric source and sink peak output current Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation Protection & Diagnostics Application Context: Suited for protected high-side switching designs typical of the automotive driver family Robustness: Designed to tolerate automotive transient and load-dump conditions Environmental & Qualification Temperature Grade: Extended automotive operating temperature range Automotive Qualification: AEC-Q100 qualified RoHS Compliance: Yes Package Package Type: Small-outline surface-mount package, VSSOP style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options #TPS48100 #TexasInstruments #GateDriver #HighSideDriver #AutomotiveIC #AECQ100 #PowerManagement #MOSFETDriver #LowIQ #VSSOP #SurfaceMount #AutomotiveElectronics #PowerSwitching #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #VehicleElectronics #PCBDesign

Multiphase Motor Driver Power MOSFET SPI 48-VQFN (7x7) DRV8353RSRGZR is a three-phase smart gate driver designed to control external N-channel MOSFETs in brushless DC (BLDC), permanent magnet synchronous motor (PMSM), and other three-phase motor drive applications. It operates from a 9 V to 100 V supply, supports SPI communication for device configuration and diagnostics, integrates three high-side and three low-side gate drivers with programmable gate drive strength, and includes protection features such as VDS overcurrent, undervoltage, overtemperature, and gate driver fault detection in a 48-pin VQFN package. #TexasInstruments #DRV8353RSRGZR #GateDriver #ThreePhaseMotorDriver #BLDC #PMSM #MOSFETDriver #SPI #MotorControl #VQFN48