N-Channel Power MOSFET – 40 V logic-level N-channel OptiMOS™ 6 power MOSFET optimized for high-efficiency synchronous buck converters, motor drives, battery-powered systems, and industrial power switching. Features a 40 V drain-to-source voltage (VDS), 100 A continuous drain current (TC = 25°C), 1.0 mΩ maximum RDS(on) at VGS = 10 V, and 1.4 mΩ maximum RDS(on) at VGS = 4.5 V. Includes logic-level gate drive, 67 nC typical gate charge, ±20 V gate-source voltage rating, 175°C maximum junction temperature, and 100% avalanche tested for enhanced ruggedness. Housed in an 8-pin PG-TDSON-8 (SuperSO8 5 × 6 mm) surface-mount package. #Infineon #BSC010N04LS6ATMA1 #BSC010N04LS6 #OptiMOS6 #PowerMOSFET #NChannelMOSFET #40V #LogicLevelMOSFET #LowRDSOn #SynchronousBuck #MotorDrive #PowerManagement #EmbeddedSystems

MOSFET N-CH 20V 3.6A SOT-23 The IRLML2502 is a small-signal N-channel enhancement mode power MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used as a load switch or power control transistor in compact electronic systems such as battery-powered devices, LED drivers, and DC-DC converters. It features a low on-resistance (RDS(on)), which allows it to switch higher currents with minimal power loss and heat generation. The device is optimized for logic-level gate drive, meaning it can be driven directly from microcontrollers (like 3.3 V or 5 V systems). It is packaged in a compact SOT-23 (Micro3) surface-mount package, making it suitable for space-constrained PCB designs. Key Features N-channel enhancement mode MOSFET Drain-source voltage (VDS) up to 20 V Continuous drain current up to ~4.2 A (at 25°C) Very low RDS(on) ≈ 45 mΩ @ VGS = 4.5 V Logic-level gate drive capability (works with 2.5–4.5 V signals) Fast switching performance Compact SOT-23 (Micro3) surface-mount package Low gate charge for efficient switching Suitable for battery-powered and low-voltage applications RoHS compliant, lead-free design #IRLML2502 #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LogicLevelMOSFET #PowerSwitch #ElectronicComponents #EmbeddedSystems #PCBDesign

N-Channel Power MOSFET – 30 V N-channel enhancement-mode MOSFET optimized for load switching, DC-DC converters, battery-powered devices, power management, motor control, and embedded switching applications. Features a 30 V drain-to-source voltage (VDS), 2 A continuous drain current, and 165 mΩ maximum RDS(on) at VGS = 4.5 V, with 1.8 V logic-level gate drive compatibility for low-voltage microcontroller interfaces. Offers 1.7 nC typical gate charge, 130 pF typical input capacitance, ultra-fast switching performance, and an integrated body diode for efficient power conversion. Rated for ±12 V gate-to-source voltage, 800 mW power dissipation, 150°C maximum junction temperature, and housed in a 3-pin MCPH3 (SC-70 / SOT-323) surface-mount package. This device is obsolete / not recommended for new designs. #onsemi #MCH3478TLH #MCH3478 #NChannelMOSFET #LogicLevelMOSFET #PowerMOSFET #LoadSwitch #DCDCConverter #PowerManagement #MotorDriver #SOT323 #EmbeddedSystems