1 µH Unshielded Drum Core, Wirewound Inductor 3.8 A 33mOhm Max Nonstandard #CommonPartsLibrary #Inductor #SDR0403

3.3 µH Shielded Drum Core, Wirewound Inductor 3.23 A 33mOhm Nonstandard #Inductor

2.2 µH Semi-Shielded Wirewound Inductor 3.7 A 33mOhm Max Nonstandard. 5x5mm

P-Channel 60 V 30A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8 P-channel enhancement mode MOSFET designed for power switching applications. It features a −60 V drain-source voltage (VDS) rating, 33 mΩ maximum RDS(on) at VGS = −10 V, and supports continuous drain current up to −39 A, making it suitable for high-side load switching and power management circuits #P-Channel #MOSFET #PowerMOSFET #60V #33mOhm

4.7 µH Shielded Drum Core, Wirewound Inductor 6 A 33mOhm Max Nonstandard MWSA0603S-4R7MT IND-SMD_L7.0-W6.6 LCSC Part Number: C408447 JLCPCB Part Class: Extended Part Manufactured by Sunlord(顺络)