50-W stereo, 100-W mono, 4.5- to 26-V supply, analog input Class-D audio amplifier w/ SpeakerGuard™ Audio Power OpAmps Amplifier IC 2-Channel (Stereo) Class D 32-HTSSOP TPA3116D2DAD HTSSOP-32_L11.0-W6.1-P0.65-LS8.1-BL LCSC Part Number: C2865736 JLCPCB Part Class: Extended Part Manufactured by TI(德州仪器)

Tiny, Low-Cost, PCM Class D Amplifier with Class AB Performance The MAX98357AETE+T is a highly integrated digital input Class-D audio amplifier designed to convert digital audio streams directly into high-efficiency speaker output signals. It features an integrated digital-to-analog conversion stage and Class-D output driver, eliminating the need for an external DAC and significantly simplifying audio system design. The device accepts digital audio data through a standard I²S interface and delivers high-quality audio output suitable for portable electronics, smart speakers, embedded systems, Internet of Things devices, multimedia products, and consumer audio equipment. Its high-efficiency architecture minimizes power dissipation while maintaining excellent audio performance, making it particularly suitable for battery-powered applications. The MAX98357AETE+T incorporates advanced audio processing capabilities, low electromagnetic interference characteristics, and integrated protection features to ensure reliable operation in compact embedded audio designs. Features Digital input Class-D audio amplifier Integrated digital-to-analog conversion functionality Direct I²S audio interface support High-efficiency power amplification architecture Filterless output design Compact surface-mount package Low electromagnetic interference operation Integrated click-and-pop suppression Low power consumption High audio fidelity performance Simplified external component requirements Integrated thermal protection Short-circuit protection capability Suitable for mono speaker applications Optimized for embedded audio systems Electrical Characteristics Digital audio input architecture Class-D switching amplifier topology High-efficiency power conversion Low distortion audio reproduction Wide operating supply range Low standby power consumption Direct speaker drive capability Integrated audio signal processing functions Applications Smart speakers Embedded audio systems Internet of Things devices Portable electronics Voice-enabled products Multimedia equipment Consumer audio devices Wireless audio products Home automation systems Educational and development platforms Battery-powered audio applications Human-machine interface systems Package Information TQFN surface-mount package Compact footprint for space-constrained designs Suitable for automated PCB assembly Thermally optimized package construction High-density electronic product integration #commonpartslibrary #integratedcircuit #audio #audioamplifier #classd amplifier #digitalaudio #i2s #dac #embeddedaudio #consumerelectronics #iot #multimedia #signalprocessing #powermanagement #maximintegrated #analogdevices #electronicsdesign #audioelectronics #speakerdriver #embeddedsystems

GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion