P-Channel 30V 15A (Ta), 70A (Tc) 2.5W (Ta), 90W (Tc) Surface Mount TO-252 (DPAK) P-channel enhancement-mode MOSFET designed for power switching applications, featuring a −30 V drain-source voltage, −70 A continuous drain current (at V_GS = −20 V, T_C = 25°C), and a maximum R_DS(on) of 6.2 mΩ at V_GS = −20 V (8 mΩ max at −10 V). The device uses advanced trench technology and is specified with ±25 V gate-source voltage, 100% UIS testing, and 100% gate resistance (R_g) testing. #Commonpartslibrary #Transistor #P-Channel #MOSFET #PowerMOSFET #30V #HighCurrent #LowRDSon

N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier

200V 30A 3.4V 51W 82mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS N-channel power MOSFET designed for high-speed switching and power conversion applications. It features a 200 V drain-to-source voltage (VDS), 30 A continuous drain current (ID), 82 mΩ typical RDS(on) at VGS = 10 V, and is housed in a TO-252 (DPAK) package. The device also specifies a 6.5 nC typical total gate charge, 380 pF typical input capacitance, and supports a maximum junction temperature of 150°C. #NChannelMOSFET #PowerMOSFET #200V #30A #TO252 #DPAK #FastSwitching #PowerManagement #DiscreteSemiconductor #XNRUSEMI