Part Datasheet Audit
Part Datasheet Audit
https://www.onsemi.com/pub/Collateral/NTMD6P02R2-D.PDF), so no property update was required. The newer canonical onsemi URL above resolves to the same datasheet family.IC prefix. Full specs and comparisons are in Part Datasheet Audit.https://www.onsemi.com/pub/Collateral/NTMD6P02R2-D.PDF), so no property update was required. The newer canonical onsemi URL above resolves to the same datasheet family.Table
| Field | Current value | Audit |
|---|---|---|
| MPN | NTMD6P02R2G | Correct orderable Pb-free suffix variant of NTMD6P02R2 |
| Manufacturer | ON Semiconductor | Correct; current branding is onsemi |
| Package | 8-SO / surface mount | Correct at a high level; datasheet calls it SOIC-8 NB, CASE 751-07, STYLE 11 |
| Pin count | 8 | Correct |
| Compliance | Pb-Free | Correct for the G suffix |
| Lifecycle | Active | Consistent with library metadata |
| Designator prefix | IC | Usable but nonstandard; Q is preferable for a dual MOSFET |
| Part type | Diodes / Other | Incorrect classification; this is a dual P-channel power MOSFET array |
| Description | Feature list only | Features are relevant, but the description should identify the device as a dual P-channel, −20 V power MOSFET in SOIC-8 |
| Datasheet URL | Official onsemi PDF present | Correct; no update needed |
Table
| Pin | Datasheet function | Current terminal label | Result |
|---|---|---|---|
| 1 | Source 1 | S1 | Match |
| 2 | Gate 1 | G1 | Match |
| 3 | Source 2 | S2 | Match |
| 4 | Gate 2 | G2 | Match |
| 5 | Drain 2 | D2_1 | Electrically correct; suffix is an internal duplicate-pad label |
| 6 | Drain 2 | D2_2 | Electrically correct; suffix is an internal duplicate-pad label |
| 7 | Drain 1 | D1_1 | Electrically correct; suffix is an internal duplicate-pad label |
| 8 | Drain 1 | D1_2 | Electrically correct; suffix is an internal duplicate-pad label |
SOIC127P600X175-8N.kicad_mod.Table
| Parameter | Datasheet value |
|---|---|
| Device type | Dual P-channel power MOSFET |
| Drain-source voltage, VDSS | −20 V |
| Gate-source voltage, VGS | ±12 V continuous |
| RDS(on), VGS = −4.5 V, ID = −6.2 A | 27 mΩ typical, 33 mΩ maximum |
| Gate threshold, VGS(th) | −0.6 V min, −0.88 V typ, −1.20 V max at ID = −250 µA |
| Total gate charge | 20 nC typical, 35 nC maximum at VDS = −16 V, VGS = −4.5 V, ID = −6.2 A |
| Pulsed drain current | Up to −40 A under specified pulse conditions |
| Continuous drain current | Layout/thermal dependent: −4.8 A to −7.8 A at 25 °C under datasheet test-board conditions |
| Junction temperature | −55 °C to +150 °C |
| RθJA | 62.5, 98, or 166 °C/W depending on copper area and test condition |
| Package | SOIC-8 NB, CASE 751-07, STYLE 11 |
Diodes / Other; should be a MOSFET/transistor array category.Unspecified and lack functional descriptions.IC is nonstandard: Q is more conventional for MOSFETs, though changing it is not necessary for electrical correctness.Scope and sources
Available part information
Datasheet pinout cross-check
Footprint cross-check
Key electrical specifications
Flagged mismatches and recommended corrections
Material mismatches
Minor / convention issues
Overall result