Audit complete against the official Littelfuse datasheet.
Metadata: MPN, manufacturer, 3-pin count, N-channel linear MOSFET description, and active lifecycle status are correct. Package is TO-247AD.
Key specs: 100 V VDS, 75 A continuous drain current at TC = 25°C, 225 A pulsed, 21 mΩ max RDS(on) at VGS = 10 V, 2.5–4.5 V threshold, ±20 V continuous VGS, 400 W dissipation, and 0.31°C/W RθJC.
Footprint: Pad numbering, 5.45 mm pitch, body outline, and through-hole geometry are consistent with the datasheet. Pinout is 1=Gate, 2=Drain, 3=Source; tab=Drain.
Mismatches: The schematic terminals lack pin names/descriptions, all have Pin Type: Unspecified, and the rendered symbol appears blank rather than showing an N-channel MOSFET.
Datasheet: A URL was already present, so it was not changed. It contains a legacy duplicated .pdf.pdf path but remains readable; the current official document is here.
I filed an internal part-quality report for the symbol and terminal metadata issues.
General Purpose Thick Film Standard Power
and High-Power Chip Resistor
47 kOhms ±5% 0.125W, 1/8W Chip Resistor 0805 (2012 Metric) Automotive AEC-Q200 Thick Film
Features:
- RMCF – standard power ratings
- RMCP – high power ratings
- Nickel barrier terminations standard
- Power derating from 100% at 70ºC to zero at +155ºC
- RoHS compliant, REACH compliant, and halogen free
- AEC-Q200 compliant
A momentary or non-latching switch which causes a temporary change in the state of an electrical circuit only while the switch is physically actuated. SWITCH TACTILE SPST-NO 0.05A 24V
N-Channel Linear Power MOSFET – High-current N-channel power MOSFET designed for linear mode operation, hot-swap circuits, electronic loads, battery management systems, industrial power supplies, motor control, DC-DC converters, and embedded power management applications. The IXYS IXTH75N10L2 features a 100 V drain-to-source voltage (VDS), 75 A continuous drain current, and 400 W maximum power dissipation, making it suitable for demanding high-power applications. Part of the Linear L2™ Series, it is specifically optimized for safe linear-mode operation, offering a wide Safe Operating Area (SOA) compared to conventional switching MOSFETs. Features a maximum RDS(on) of 21 mΩ (VGS = 10 V), 215 nC typical gate charge, ±20 V gate-source voltage rating, and 8100 pF input capacitance. Operates over a −55°C to +150°C junction temperature range and is housed in a TO-247-3 through-hole package, providing excellent thermal performance for high-power embedded and industrial systems.