This is a recreation of the EV5920-5048-V-00A from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel.

WIP Items: -Routing

In flux, this project demonstrates hierarchal design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout.

Changelog from Original MPS Design:

This is a recreation of the EV5920-5048-V-00A from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel.

WIP Items: -Routing

In flux, this project demonstrates hierarchal design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout.

Changelog from Original MPS Design:

This is a recreation of the EV5920-5048-V-00A from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel.

In Flux, this project demonstrates hierarchical design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout.

Changelog from Original MPS Design:

Welcome to your new project. Imagine what you can build here.

Welcome to your new project. Imagine what you can build here.

60 V automotive-style 24 V / 5 A DC-DC converter with cleaned J2 input path: J2 raw input through F1 fuse, SMAJ58A TVS, Q4 reverse-polarity MOSFET, then VIN_60V_PROTECTED handoff into the converter and LT4363 hot-swap stage.

The IPB017N10N5LF is a high-performance N-channel MOSFET from Infineon's OptiMOS™ 5 Linear FET series, designed specifically for hot-swap and e-fuse applications. This 100 V component, housed in a D2-PAK 7pin package (PG-TO 263-7), features exceptionally low on-resistance (RDS(on)) and a wide safe operating area (SOA), making it ideal for demanding power management tasks. The device is rated for a continuous drain current of up to 180 A (silicon limited) and 314 A (package limited), with a maximum pulsed drain current of 720 A. It supports gate-source voltages ranging from -20 V to 20 V and is 100% avalanche tested, ensuring robust performance under extreme conditions. The IPB017N10N5LF is RoHS compliant, Pb-free, and halogen-free, adhering to environmental standards. Key electrical characteristics include a maximum RDS(on) of 1.7 mΩ at VGS=10 V and a gate threshold voltage range of 2.5 V to 4.1 V. This MOSFET is suitable for applications requiring high efficiency and reliability, supported by its qualification according to JEDEC standards.