This is a recreation of the [EV5920-5048-V-00A](https://www.monolithicpower.com/en/ev5920-5048-v-00a.html) from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel. WIP Items: -Routing In flux, this project demonstrates hierarchal design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout. Changelog from Original MPS Design: - Not including GPIO2 or GPIO3 as included in the original board due to NC pin name on the IC. - PC1 and PC2 footprints are 5mm in pitch and 12.5mm in diameter rather than the 16mm diameter in the original layout. This change corresponds with the selected part more accurately. -Renamed Designators to be More Verbose

This is a recreation of the [EV5920-5048-V-00A](https://www.monolithicpower.com/en/ev5920-5048-v-00a.html) from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel. WIP Items: -Routing In flux, this project demonstrates hierarchal design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout. Changelog from Original MPS Design: - Not including GPIO2 or GPIO3 as included in the original board due to NC pin name on the IC. - PC1 and PC2 footprints are 5mm in pitch and 12.5mm in diameter rather than the 16mm diameter in the original layout. This change corresponds with the selected part more accurately. -Renamed Designators to be More Verbose

This is a recreation of the [EV5920-5048-V-00A](https://www.monolithicpower.com/en/ev5920-5048-v-00a.html) from MPS which demonstrates a MP5920 Hot-Swap controller commanding 5 MP5048 e-fuses in parallel. In Flux, this project demonstrates hierarchical design through the use of modules. Additionally, parametric symbols are used extensively to improve schematic cleanliness. Components in the canvas are locked because their positions correspond to the same positions as the original layout. Changelog from Original MPS Design: - Not including GPIO2 or GPIO3 as included in the original board due to NC pin name on the IC. - PC1 and PC2 footprints are 5mm in pitch and 12.5mm in diameter rather than the 16mm diameter in the original layout. This change corresponds with the selected part more accurately. -Renamed Designators to be More Verbose

Welcome to your new project. Imagine what you can build here.

Welcome to your new project. Imagine what you can build here.

Production-intent USB-C macropad based on ATmega32U4 TQFP-44 with 11 Cherry-MX hotswap keys, EC11 encoder, per-key diodes, USB ESD protection, and deferred routing until case STEP alignment.

Production-intent USB-C macropad based on ATmega32U4 TQFP-44 with 11 Cherry-MX hotswap keys, EC11 encoder, per-key diodes, USB ESD protection, and deferred routing until case STEP alignment.

USB-C TKL Hall-effect keyboard with hot-swap switches, rotary encoder, ESD protection, and app-configurable firmware architecture.

Compact 4×4 ortholinear custom macropad with RP2040-Zero, 14 MX hot-swap positions, 2 EC11 encoders, 4 layer LEDs, USB protection, and JLCPCB-compatible 2-layer PCB layout for a 3D-printed enclosure.

60 V automotive-style 24 V / 5 A DC-DC converter with cleaned J2 input path: J2 raw input through F1 fuse, SMAJ58A TVS, Q4 reverse-polarity MOSFET, then VIN_60V_PROTECTED handoff into the converter and LT4363 hot-swap stage.

The IPB017N10N5LF is a high-performance N-channel MOSFET from Infineon's OptiMOS™ 5 Linear FET series, designed specifically for hot-swap and e-fuse applications. This 100 V component, housed in a D2-PAK 7pin package (PG-TO 263-7), features exceptionally low on-resistance (RDS(on)) and a wide safe operating area (SOA), making it ideal for demanding power management tasks. The device is rated for a continuous drain current of up to 180 A (silicon limited) and 314 A (package limited), with a maximum pulsed drain current of 720 A. It supports gate-source voltages ranging from -20 V to 20 V and is 100% avalanche tested, ensuring robust performance under extreme conditions. The IPB017N10N5LF is RoHS compliant, Pb-free, and halogen-free, adhering to environmental standards. Key electrical characteristics include a maximum RDS(on) of 1.7 mΩ at VGS=10 V and a gate threshold voltage range of 2.5 V to 4.1 V. This MOSFET is suitable for applications requiring high efficiency and reliability, supported by its qualification according to JEDEC standards.

First-pass modular AI glasses prototype with dual temple electronics, four OV5640 camera nodes, ESP32-S3 gateway, stereo bone-conduction audio, hot-swappable protected LiPo power, and a charging/storage case.