Review all available part information (MPN, package, pin count, description, properties). If no datasheet URL is already set, search the web for the official datasheet and update the part's Datasheet property with the URL. Then cross-check the schematic symbol, footprint, and pin descriptions against the datasheet. Summarize key specs and flag any mismatches.
I’ll inspect the part metadata, look up the official datasheet if needed, update the Datasheet property if it’s missing, then cross-check symbol/footprint/pins and summarize any mismatches.
Published Part UID: 2c350fb6-56df-463d-b1d1-3178c560f394
Schematic terminals: 3 terminal symbols, with Pin Number properties 1, 2, and 3
PCB footprint asset: DXT5551P513.kicad_mod
3D model asset: DXT5551P5-13.stp
The Datasheet URL property was already populated, so no datasheet-property update was required under the requested rule.
Datasheet identity and key specs
Source: datasheet currently attached to the part.
Device: DXT5551P5
Orderable product: DXT5551P5-13
Description: 160 V NPN high-voltage transistor
Package / case: PowerDI5
Marking: DXT5551
Reel: 13 inch, 16 mm tape, 5,000 per reel
Maximum collector-base voltage, VCBO: 180 V
Maximum collector-emitter voltage, VCEO: 160 V
Maximum emitter-base voltage, VEBO: 6 V
Continuous collector current, IC: 600 mA
Power dissipation: up to 2.25 W with 50 mm x 50 mm 2 oz collector pad; 0.7 W on minimum recommended pad layout
RthetaJA: 55.5 degC/W with 50 mm x 50 mm 2 oz collector pad; 179 degC/W on minimum recommended pad layout
RthetaJT: 30 degC/W
Operating / storage temperature: -55 degC to +150 degC
hFE: min 80 at IC=1 mA; min 80 typ 145 max 250 at IC=10 mA; min 30 typ 65 at IC=50 mA, VCE=5 V
VCE(sat): max 150 mV at IC=10 mA, IB=1 mA; max 200 mV at IC=50 mA, IB=5 mA
fT: typ 130 MHz
Cobo: max 6 pF
Moisture sensitivity: MSL 1 per J-STD-020
Qualification: AEC-Q101
Datasheet pinout
PowerDI5 terminal assignment from the datasheet:
Table
Pin
Function
1
Base
2
Emitter
3
Collector
Physical orientation shown by the datasheet: bottom-left = Base, bottom-right = Emitter, top / large terminal = Collector.
Footprint cross-check
Footprint pads found in DXT5551P513.kicad_mod:
Table
Pad
Position
Size
Cross-check
1
x=-0.920 mm, y=2.856 mm
1.390 mm x 1.400 mm
Matches bottom-left small pad, Base
2
x=0.920 mm, y=2.856 mm
1.390 mm x 1.400 mm
Matches bottom-right small pad, Emitter
3
x=0.000 mm, y=-1.126 mm
3.360 mm x 4.860 mm
Matches top / large pad, Collector
Suggested pad layout from datasheet:
C = 1.840 mm
G = 0.852 mm
X = 3.360 mm
X1 = 1.390 mm
Y = 4.860 mm
Y1 = 1.400 mm
The implemented pad sizes and pitch are consistent with these recommended values. The footprint appears to be for PowerDI5, which matches DXT5551P5-13. It is not a SOT-89 footprint; that would correspond to a different DXT5551 orderable variant.
Schematic symbol cross-check
Current schematic symbol terminals:
Table
Terminal
Current properties
Expected from datasheet
Result
Pin 1
Pin Number = 1; Pin Type = Unspecified; no Pin Description observed
Base
Mismatch: missing pin description / type metadata
Pin 2
Pin Number = 2; Pin Type = Unspecified; no Pin Description observed
Emitter
Mismatch: missing pin description / type metadata
Pin 3
Pin Number = 3; Pin Type = Unspecified; no Pin Description observed
Collector
Mismatch: missing pin description / type metadata
The symbol geometry places pin 1 at the left, pin 2 at the upper/right side, and pin 3 at the lower/right side, which is a conventional NPN BJT-style arrangement if the intended functions are Base, Collector, and Emitter respectively. However, the symbol currently does not store those functions as Pin Description values.
Mismatches / issues flagged
Pin descriptions are missing from the schematic terminals. The expected descriptions are Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.
Pin Type is currently Unspecified on all three terminals. For a discrete transistor this may be electrically acceptable, but it is less descriptive than ideal for library quality.
Package naming in project metadata is incomplete: the project has no explicit Package / Case Code property visible, while the datasheet package is PowerDI5.
The attached Datasheet URL is present but points to a stored PDF copy, not directly to a Diodes-hosted URL. This satisfies the current Datasheet URL requirement as populated, but an official manufacturer URL would be preferable if the library policy requires direct manufacturer links.
Overall assessment
MPN, manufacturer, description, pin count, and footprint are consistent with the attached datasheet for DXT5551P5-13.
Footprint pad geometry and pad numbering match the datasheet recommended PowerDI5 land pattern.
Main library-quality gap: schematic terminal descriptions and pin types are not populated.
NPN Bipolar Junction Transistor (BJT) – High-voltage NPN transistor for general-purpose switching and amplification, featuring a 160 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 2.25 W power dissipation. Provides a 130 MHz transition frequency, minimum DC current gain (hFE) of 80 at 10 mA, and 200 mV maximum collector-emitter saturation voltage at 50 mA collector current. Specified for operation over a −55°C to +150°C junction temperature range and housed in a PowerDI™ 5 surface-mount package.