Datasheet URL: Populated, but points to a Digi-Key product page rather than a PDF:
https://www.digikey.co.uk/product-detail/en/toshiba-semiconductor-and-storage/2SK209-BL-TE85LF/2SK209-BL-TE85LF-CT-ND/4304254
Device: Silicon N-channel junction FET for low-noise audio amplification
Status: Not Recommended for New Design
BL IDSS rank:6.0–14 mA at VDS = 10 V, VGS = 0
VGDS: −50 V
Gate current: 10 mA
Power dissipation: 150 mW
Junction temperature: 125°C
VGS(OFF): −0.2 to −1.5 V
Forward transfer admittance: 15 mS typical
Noise figure: 1 dB typical at 1 kHz
Package envelope: approximately 2.9 × 2.5 × 1.1 mm
Packing: TE85L embossed tape, typically 3000 pieces/reel
Exact assignment:1 Source, 2 Drain, 3 Gate
The current Toshiba product page identifies SOT-346 / SC-59 / TO-236MOD and Toshiba package 2-3F1S. The package block in the served datasheet also contains legacy naming S-MINI, TO-236, and 2-3F1B; this is a source-level naming/revision ambiguity rather than proof of a different lead pattern.
Symbol audit
The symbol has three terminals and its terminal UIDs map to footprint pads 1–3. However:
Table
Pin
Required function
Current name
Current type
Description
1
Source
blank/~
Unspecified
Missing
2
Drain
blank/~
Unspecified
Missing
3
Gate
blank/~
Unspecified
Missing
The rendered symbol is also not a recognizable JFET schematic symbol; it appears as a generic/custom graphic with no readable pin labels.
Footprint audit
Embedded footprint identity is SSM3J375FLXHF.kicad_mod, not 2SK209. Its metadata says 2-3F1S, and it provides:
Pad 1: rectangular SMD, 0.80 × 1.00 mm, at approximately −0.95, +1.20 mm
Pad 2: rectangular SMD, 0.80 × 1.00 mm, at approximately +0.95, +1.20 mm
Pad 3: rectangular SMD, 0.80 × 1.00 mm, at approximately 0, −1.20 mm
Body fabrication outline: approximately 2.9 × 1.5 mm
Courtyard: approximately 4.9 × 5.4 mm
The geometry is broadly consistent with the three-lead S-Mini/SC-59 family, but the footprint’s source identity is for a different Toshiba transistor. The provided Toshiba datasheet does not include a recommended land pattern, so exact pad-geometry compliance cannot be conclusively established from that document alone.
Mismatches and ambiguities
Critical: Symbol pin names, descriptions, and electrical types are entirely missing.
Critical: Although numeric terminal-to-pad mapping is intact, users cannot identify Source/Drain/Gate from the symbol.
Major: Symbol graphic is not a clear N-channel JFET symbol.
Major: Footprint asset is named for SSM3J375FLXHF, a different device; package-family compatibility appears plausible but provenance is incorrect.
Moderate: Existing Datasheet URL is a distributor page, not the preferred official Toshiba PDF.
Moderate: Part Type Transistors is generic; a more precise classification would be N-channel JFET.
Ambiguity: Toshiba sources use both 2-3F1B and 2-3F1S, and TO-236 versus TO-236MOD, apparently reflecting legacy/current package naming.
Automated part-review checks returned no findings, despite the missing terminal metadata; manual inspection therefore provides the relevant evidence.
Audit completed against Toshiba’s official 2SK209 datasheet. Key ratings: N-channel JFET, BL rank IDSS 6–14 mA, VGDS −50 V, VGS(off) −0.2 to −1.5 V, 150 mW, SC-59/SOT-346; correct pinout is 1 Source, 2 Drain, 3 Gate.
Existing Datasheet property was not changed because it was already populated, though it links to Digi-Key rather than the official Toshiba PDF.
Critical mismatches: symbol pins lack names, descriptions, and electrical types; the graphic is not a recognizable JFET symbol.
Footprint geometry appears broadly package-compatible, but its asset is named for a different device (SSM3J375FLXHF), so exact provenance is questionable.
I filed an internal part-quality report covering these issues.
Wirelessly connects nets on schematic. Used to organize schematics and separate functional blocks. To wirelessly connect net portals, give them same designator. #portal
General Purpose Thick Film Standard Power
and High-Power Chip Resistor
47 kOhms ±5% 0.125W, 1/8W Chip Resistor 0805 (2012 Metric) Automotive AEC-Q200 Thick Film
Features:
- RMCF – standard power ratings
- RMCP – high power ratings
- Nickel barrier terminations standard
- Power derating from 100% at 70ºC to zero at +155ºC
- RoHS compliant, REACH compliant, and halogen free
- AEC-Q200 compliant
2SK209-BL(TE85L,F) is a Toshiba low-noise N-channel junction FET with −50 V drain-source rating, BL-grade 6–12 mA drain current, 150 mW power dissipation, and a 3-pin SC-59/SOT-346 surface-mount package for low-level analog amplification and switching.