2N3904
Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 625 mW Through Hole TO-92_Inline #CommonPartsLibrary #TransistorBJT... show more310 Uses
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2N3904 Inline_Wide
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92_Inline #CommonPartsLibrary #Transistor #BJT #NPN... show more271 Uses
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2N3904TFR
Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 625 mW Through Hole TO-92-3 The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is widely used in signal processing, small-signal amplification, and digital switching circuits. This transistor offers fast switching speed, low saturation voltage, and reliable performance in a compact surface-mount package, making it suitable for consumer electronics, industrial controls, and embedded systems. Manufacturer Various (commonly ON Semiconductor / onsemi, Diodes Inc., Central Semiconductor) Part Number 2N3904TFR Transistor Type NPN Bipolar Junction Transistor (BJT) Configuration Single Package / Case SOT-23 (TO-236AB) Mounting Style Surface Mount (SMD/SMT) Collector-Emitter Voltage (VCEO) 40 V Collector-Base Voltage (VCBO) 60 V Emitter-Base Voltage (VEBO) 6 V Collector Current (IC) 200 mA (max) Power Dissipation (PD) ~200 mW to 350 mW (package dependent) DC Current Gain (hFE) 100 to 300 (typical, varies with operating conditions) Transition Frequency (fT) ~300 MHz Collector-Emitter Saturation Voltage (VCE(sat)) ~0.2 V (typical at IC = 10 mA, IB = 1 mA) Operating Temperature Range -55°C to +150°C Polarity NPN Packaging Tape & Reel (TFR suffix) RoHS Compliance Compliant #commonpartslibrary #transistor #bjt... show more810 Uses
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