Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 625 mW Through Hole TO-92-3
The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is widely used in signal processing, small-signal amplification, and digital switching circuits. This transistor offers fast switching speed, low saturation voltage, and reliable performance in a compact surface-mount package, making it suitable for consumer electronics, industrial controls, and embedded systems.
Manufacturer
Various (commonly ON Semiconductor / onsemi, Diodes Inc., Central Semiconductor)
Part Number
2N3904TFR
Transistor Type
NPN Bipolar Junction Transistor (BJT)
Configuration
Single
Package / Case
SOT-23 (TO-236AB)
Mounting Style
Surface Mount (SMD/SMT)
Collector-Emitter Voltage (VCEO)
40 V
Collector-Base Voltage (VCBO)
60 V
Emitter-Base Voltage (VEBO)
6 V
Collector Current (IC)
200 mA (max)
Power Dissipation (PD)
~200 mW to 350 mW (package dependent)
DC Current Gain (hFE)
100 to 300 (typical, varies with operating conditions)
Transition Frequency (fT)
~300 MHz
Collector-Emitter Saturation Voltage (VCE(sat))
~0.2 V (typical at IC = 10 mA, IB = 1 mA)
Operating Temperature Range
-55°C to +150°C
Polarity
NPN
Packaging
Tape & Reel (TFR suffix)
RoHS Compliance
Compliant
