P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) #CommonPartsLibrary #Transistor #P-channel #Mosfet #TrenchFET #SI2333

N-Channel 80 V 150A (Tc) 136W (Tc) Surface Mount PowerPAK® 8 x 8 #CommonPartsLibrary #Transistor #FET #MOSFET #Single-FET #TrenchFET #SQJQ480

P-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC The SQ4435EY-T1_GE3 is an automotive-grade P-Channel enhancement-mode TrenchFET® power MOSFET from Vishay Siliconix. It is designed for efficient high-side load switching and power management applications, offering low on-resistance, fast switching performance, and excellent thermal reliability. Qualified to AEC-Q101, this MOSFET is suitable for demanding automotive and industrial environments. It is housed in a compact SO-8 surface-mount package, making it ideal for space-constrained designs. Key Features P-Channel enhancement-mode TrenchFET® MOSFET 30 V drain-to-source voltage (VDS) 15 A continuous drain current (TC = 25°C) Low RDS(on): 18 mΩ max @ VGS = -10 V 31 mΩ max @ VGS = -4.5 V AEC-Q101 qualified for automotive applications Operating junction temperature: -55°C to +175°C Low conduction losses for improved power efficiency Fast switching characteristics 100% Rg and UIS tested RoHS compliant and halogen-free Compact SO-8 surface-mount package Typical Applications Automotive high-side load switches Battery management systems (BMS) DC-DC converters Power distribution switches Motor control circuits Industrial power management Reverse battery protection #Vishay #SQ4435EY #PChannelMOSFET #TrenchFET #PowerMOSFET #Automotive #AECQ101 #HighSideSwitch #PowerManagement #DCDC #BatteryManagement #SO8 #IndustrialElectronics #LowRDSon #SurfaceMount

-19A Id, -60V Vds, TrenchFET P-Channel Power MOSFET, 60mOhm Ron, 40nC Qg, -55 to 150 °C, TO-252-2 TrenchFET P-Channel Power MOSFET TO?252*

602A Id, 60V Vds, N-Channel TrenchFET MOSFET, 0.85mOhm Ron, 42nC Qqd, -55 to 175 °C, LFPAK88 Power MOSFET N-MOS Automotive AEC-Q101 PowerPAK 8x8L LFPAK88*

N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH 30 V N-channel TrenchFET® Gen V MOSFET that combines very low on-resistance (RDS(on)), high current capability, and a thermally efficient compact package. It is optimized for applications where high efficiency, low power loss, and small PCB footprint are critical. This device is built using advanced trench MOSFET technology, enabling low conduction and switching losses, which improves overall system efficiency in power electronics designs. N-channel MOSFET (enhancement mode) Low RDS(on): ~1.2 mΩ @ 10 V → minimizes conduction losses High current capability: 47.1 A (ambient) up to 162 A (case) 30 V drain-source voltage (VDS) Low gate charge (Qg) → fast switching performance Wide operating temperature: −55 °C to +150 °C Compact PowerPAK® 1212-8 package for high power density #CommonPartsLibrary #Transistor #FET #Mosfet #SISS52