Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

N-Channel 1200 V 95A (Tc) 427W Through Hole TO-247N Silicon Carbide (SiC) N-channel Power MOSFET for high-efficiency power switching applications, featuring a 1200 V drain-to-source voltage rating, 71 A continuous drain current, and 22 mΩ typical on-resistance (R_DS(on)). Housed in a TO-247N package, it is designed for high-speed switching and low switching losses. #SiCMOSFET #NChannelMOSFET #PowerMOSFET #1200V #71A #22mOhm #TO247N #PowerSwitching #RohmSemiconductor #SCT3022KLHRC11

N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 77 A continuous drain current (Tc = 25°C), and 22 mΩ typical RDS(on). Housed in a TO-247N package, it is suitable for high-speed switching and high-voltage power conversion circuits. #SiC_MOSFET #N_Channel #650V #77A #22mOhm #TO247N #PowerSwitching #Rohm

Recom 2W Isolated DC-DC Converter, Vin 21.6 26.4 V dc, Vout 15 V dc, -9 V dc RECOM RxxP2xxyyD Series is a 2W isolated DC/DC converter designed specifically for SiC MOSFET and IGBT gate driver applications requiring asymmetric output voltages. The converter provides galvanically isolated dual outputs such as ±20V/-5V or +15V/-3V from a single DC input source. It features reinforced isolation up to 6.4kVDC, very low isolation capacitance (10pF max), high common-mode transient immunity (CMTI) of 65kV/µs, and a transformer with physically separated windings for improved noise immunity. The SIP7 package enables compact PCB integration in industrial power electronics, motor drives, renewable energy systems, EV charging, inverters, and high-voltage switching applications. The device is IEC/EN/UL62368-1 certified and optimized for reliable isolated gate driver power supplies. Search Keywords: RECOM RxxP2xxyyD, isolated DC-DC converter, SIP7 DC-DC converter, gate driver power supply, SiC gate driver converter, IGBT gate driver converter, isolated power module, ±15V isolated supply, ±20V isolated supply, high isolation DC-DC converter, 6.4kV isolation converter, low capacitance converter, CMTI 65kV/us converter, industrial DC-DC module, power electronics converter, motor drive power supply, inverter power supply Hashtags: #RECOM #RxxP2xxyyD #DCDCConverter #IsolatedPowerSupply #GateDriver #SiC #SiCMOSFET #IGBT #PowerElectronics #IndustrialElectronics #MotorDrive #InverterDesign #EVCharging #HighVoltage #GalvanicIsolation #SIP7 #EmbeddedPower #ElectronicComponents #PCBDesign #PowerSupplyModule