P-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC The SQ4435EY-T1_GE3 is an automotive-grade P-Channel enhancement-mode TrenchFET® power MOSFET from Vishay Siliconix. It is designed for efficient high-side load switching and power management applications, offering low on-resistance, fast switching performance, and excellent thermal reliability. Qualified to AEC-Q101, this MOSFET is suitable for demanding automotive and industrial environments. It is housed in a compact SO-8 surface-mount package, making it ideal for space-constrained designs. Key Features P-Channel enhancement-mode TrenchFET® MOSFET 30 V drain-to-source voltage (VDS) 15 A continuous drain current (TC = 25°C) Low RDS(on): 18 mΩ max @ VGS = -10 V 31 mΩ max @ VGS = -4.5 V AEC-Q101 qualified for automotive applications Operating junction temperature: -55°C to +175°C Low conduction losses for improved power efficiency Fast switching characteristics 100% Rg and UIS tested RoHS compliant and halogen-free Compact SO-8 surface-mount package Typical Applications Automotive high-side load switches Battery management systems (BMS) DC-DC converters Power distribution switches Motor control circuits Industrial power management Reverse battery protection #Vishay #SQ4435EY #PChannelMOSFET #TrenchFET #PowerMOSFET #Automotive #AECQ101 #HighSideSwitch #PowerManagement #DCDC #BatteryManagement #SO8 #IndustrialElectronics #LowRDSon #SurfaceMount

MOSFETs SQ4435EY-VB SO-8_L4.9-W3.9-P1.27-LS5.9-BL LCSC Part Number: C878921 JLCPCB Part Class: Extended Part Manufactured by VBsemi(微碧半导体)